FST6340M thru FST63100M Silicon Power Schottky Diode VRRM = 40 V - 100 V IF(AV) = 60 A Features • High Surge Capability • Types from 40 V to 100 V VRRM D61-3M Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions FST6340M FST6345M FST6360M FST6380M FST63100M VRRM 40 VRMS VDC Tj Tstg 45 60 28 32 42 40 -55 to 150 -55 to 150 45 60 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Unit 100 V 56 70 V 80 100 -55 to 150 -55 to 150 V °C °C 80 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 125 °C 60 60 60 60 60 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 600 600 600 600 600 A Maximum instantaneous forward voltage (per leg) VF IFM = 30 A, Tj = 25 °C 0.70 7.0 0.75 0.84 0.84 V IR Tj = 25 °C Tj = 100 °C 1 10 1 10 1 10 1 10 1 10 mA Tj = 150 °C 30 30 30 30 30 1.20 1.20 1.20 1.20 1.20 Parameter Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) FST6340M FST6345M FST6360M FST6380M FST63100M Unit Thermal characteristics Thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W FST6340M thru FST63100M www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 FST6340M thru FST63100M Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3