MBRT60035(R)L
Low VF Silicon Power
Schottky Diode
VRRM = 35 V
IF(AV) = 600 A
Features
• High Surge Capability
• Type 35 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Parameter
Conditions
MBRT60035(R)L
Unit
Maximum recurrent peak reverse voltage
VRRM
35
V
Maximum RMS voltage
VRMS
25
V
Maximum
M
i
DC bl
blocking
ki voltage
lt
Operating temperature
Storage temperature
VDC
Tj
Tstg
35
-55 to 150
-55 to 150
V
°C
°C
Conditions
MBRT60035(R)L
Unit
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Average forward current (per pkg)
IF(AV)
TC = 100 °C
600
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
4000
A
Maximum instantaneous forward voltage (per
leg)
VF
IFM = 300 A, Tj = 25 °C
0.60
V
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
Tj = 25 °C
3
Tj = 100 °C
300
(per leg)
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
www.genesicsemi.com/silicon-products/schottky-rectifiers/
RΘJC
0.28
1
°C/W
MBRT60035(R)L
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
MBRT60035(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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3