MBRT12020 thru MBRT12040R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 120 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions MBRT12020(R) MBRT12030(R) MBRT12035(R) MBRT12040(R) Unit Parameter Symbol Repetitive peak reverse voltage VRRM 20 30 35 40 V RMS reverse voltage VRMS 14 21 25 28 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V °C °C 20 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRT12020(R) MBRT12030(R) MBRT12035(R) MBRT12040(R) Unit Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 120 120 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 800 800 800 800 A Maximum instantaneous forward voltage (per leg) VF IFM = 60 A, Tj = 25 °C 0.70 0.70 0.70 0.70 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 1 10 30 1 10 30 mA 0.80 0.80 0.80 0.80 °C/W Thermal characteristics Thermal resistance, junctioncase (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRT12020 thru MBRT12040R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRT12020 thru MBRT12040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3