MBR12045CT thru MBR120100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF(AV) = 120 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBR12045CT(R) MBR12060CT(R) MBR12080CT(R) MBR120100CT(R) Unit VRRM 45 60 80 100 V VRMS 32 42 57 70 V VDC Tj Tstg 45 -55 to 150 -55 to 150 60 -55 to 150 -55 to 150 80 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 120 120 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 800 800 800 800 A VF IFM = 60 A, Tj = 25 °C 0.7 0.75 0.84 0.84 V IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 1 10 30 1 10 30 mA 0.80 0.80 0.80 0.80 °C/W Parameter Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) MBR12045CT(R) MBR12060CT(R) MBR12080CT(R) MBR120100CT(R) Unit Thermal characteristics Thermal resistance, junction-case, per leg RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBR12045CT thru MBR120100CTR www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR12045CT thru MBR120100CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3