MBR400150CT thru MBR400200CTR Silicon Power Schottky Diode VRRM = 150 V - 200 V IF(AV) = 400 A Features • High Surge Capability • Types from 150 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature MBR400150CT(R) MBR400200CT(R) Unit VRRM 150 200 V VRMS 106 141 V VDC Tj Tstg 150 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C Symbol Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Conditions MBR400150CT(R) MBR400200CT(R) Unit IF(AV) TC = 125 °C 400 400 A IFSM tp = 8.3 ms, half sine 3000 3000 A Maximum forward voltage (per leg) VF IFM = 200 A, Tj = 25 °C 0.88 0.92 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 3 10 50 3 10 50 mA 0.35 0.35 °C/W Parameter Average forward current (per pkg) Peak forward surge current (per leg) Symbol Thermal characteristics Thermal resistance, junction-case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBR400150CT thru MBR400200CTR www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR400150CT thru MBR400200CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3