19-2997; Rev 0; 10/03 m m 10 3.0 m -PIN TD FN KIT ATION EVALU LE B A IL A AV m x 3.0 High-Speed, Wide-Input, Single-Phase MOSFET Driver Features ♦ Single-Phase Synchronous Drivers User-programmable break-before-make circuitry prevents shoot-through currents, maximizing converter efficiency. An enable input allows total driver shutdown (<1µA typ) for power-sensitive portable applications. The PWM control input is compatible with TTL and CMOS logic levels. The MAX8552, along with the MAX8524 or the MAX8525 multiphase controllers, provides flexible 2-, 3-, 4-, 6-, or 8-phase CPU core-voltage supplies. The MAX8552 is available in space-saving 10-pin TDFN and µMAX packages and is specified for -40°C to +85°C operation. ♦ Up to 2MHz Operation with TDFN Package ♦ Up to 24V (max) Input Voltage ♦ 0.1µA (typ) Quiescent Current in Shutdown Over Temperature ♦ 0.5Ω/1.0Ω/0.7Ω/1.3Ω ROUT Drivers ♦ 12ns (typ) Propagation Delay ♦ 11ns (typ) Rise/Fall Times with 3000pF Load ♦ Adaptive Dead Time and User-Programmable Delay Mode ♦ Up to 1.2MHz Operation with µMAX Package ♦ Enable Function ♦ TTL- and CMOS-Compatible Logic Inputs ♦ Available in a Space-Saving Thin DFN Package Ordering Information PART Applications Multiphase Buck Converters TEMP RANGE PIN-PACKAGE MAX8552EUB -40°C to +85°C 10 µMAX MAX8552ETB -40°C to +85°C 10 TDFN 3mm x 3mm Voltage Regulator Modules (VRMs) Processor-Core Voltage Regulators Pin Configurations appear at end of data sheet. Desktops, Notebooks, and Servers Switching Power Supplies Typical Operating Circuit VCC 4.5V TO 6.5V ON OFF VIN 6V TO 24V VCC BST GND DH EN MAX8552 LX VOUT 1.45V AT 20A DLY DL PWM CONTROL SIGNAL PWM PGND ________________________________________________________________ Maxim Integrated Products For pricing delivery, and ordering information please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX8552 General Description The MAX8552 highly integrated monolithic MOSFET driver is capable of driving a pair of power MOSFETs in single or multiphase synchronous buck-converter applications that provide up to 30A output current per phase. The MAX8552 simplifies PC board layout in multiphase systems, particularly three phases and higher. High input voltages up to 24V allow the MAX8552 to be used in desktop, notebook, and server applications. Each MOSFET driver is capable of driving 3000pF capacitive loads with only 12ns propagation delay and 11ns (typ) rise and fall times, making the MAX8552 ideal for high-frequency applications. MAX8552 High-Speed, Wide-Input, Single-Phase MOSFET Driver ABSOLUTE MAXIMUM RATINGS VCC to GND ..............................................................-0.3V to +7V PWM, EN, DL, DLY to GND ........................-0.3V to (VCC + 0.3V) BST to PGND..........................................................-0.3V to +35V LX to PGND ...............................................................-1V to +28V DH to PGND ..............................................-0.3V to (VBST + 0.3V) DH, BST to LX...........................................................-0.3V to +7V DH and DL Continuous Current......................................±200mA Continuous Power Dissipation (TA = +70°C) 10-Pin µMAX (derate 5.6mW/°C above +70°C) ........444.4mW 10-Pin TDFN (derate 24.4mW/°C above +70°C) .......1951mW Operating Temperature Range ...........................-40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VCC = VBST = VDLY = VEN = 5V, VGND = VPGND = VLX = 0V; TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) PARAMETER CONDITIONS MIN TYP MAX UNITS 4.5 6.5 V VCC rising 3.25 3.80 VCC falling 3.0 3.5 UNDERVOLTAGE PROTECTION VCC Supply Voltage Range Undervoltage Lockout (UVLO) Shutdown Supply Current Idle Supply Current (ICC) 0.25V hysteresis VEN = 0V, VCC = 6.5V No switching No switching Control Supply Current (IGND) Switching No switching, ICC Driver Supply Current (IPGND) No switching, IBST Switching, IBST + ICC V PWM = GND or VCC, TA= +25°C 0.04 PWM = GND or VCC, TA = +85°C 0.1 VCC = 6.5V, PWM = GND, RDLY = 47kΩ 330 500 µA PWM = GND 25 50 µA PWM = VCC 2 3 mA 1.8 3 mA PWM = GND 0.1 10 µA PWM = VCC 1.2 2 mA PWM = GND 0.1 10 µA PWM = VCC 1.2 2 2 4 VBST = 4.5V 1.3 2.4 VBST = 5V 1.2 VBST = 4.5V 0.7 VBST = 5V 0.6 fPWM = 250kHz, 50% duty cycle 250kHz 1 µA mA DRIVER SPECIFICATIONS (See the Timing Diagram) PWM = GND, sourcing current DH Driver Resistance PWM = VCC, sinking current 2 _______________________________________________________________________________________ 1.1 Ω High-Speed, Wide-Input, Single-Phase MOSFET Driver (VCC = VBST = VDLY = VEN = 5V, VGND = VPGND = VLX = 0V; TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) PARAMETER CONDITIONS PWM = GND, sourcing current DL Driver Resistance PWM = VCC, sinking current TYP MAX VCC = 4.5V MIN 1.0 1.6 VCC = 5V 0.9 VCC = 4.5V 0.5 VCC = 5V 0.45 0.8 UNITS Ω DH Rise Time (trDH) PWM = VCC VBST = 5V, 3000pF load 14 ns DH Fall Time (tfDH) PWM = GND VBST = 5V, 3000pF load 9 ns DL Rise Time (trDL) PWM = VCC VCC= 5V, 3000pF load 11 ns ns DL Fall Time (tfDL) DH Propagation Delay PWM = GND VCC= 5V, 3000pF load 8 PWM falling (tpDHf) VBST = 5V 12 PWM = VCC, DL falling (tpDHr) VBST = 5V 14 PWM rising (tpDLf) DL Propagation Delay PWM = GND, LX falling (tpDLr) ns 9 VBST - VLX = 5V ns 16 EN Leakage Current VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +25°C 0.01 VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +85°C 0.1 Input-Voltage High Threshold VCC = 6.5V Input-Voltage Low Threshold VCC = 4.5V 1 µA 2.5 0.8 V V PWM Leakage Current VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +25°C 0.01 VPWM = 0V or 6.5V, VEN = 0V or 6.5V, VCC = 6.5V, TA = +85°C 0.1 Input-Voltage High Threshold VCC = 6.5V Input-Voltage Low Threshold VCC = 4.5V 1 µA 3.5 1.2 Input Threshold Hysteresis V V 0.5 V DLY Delay Program Accuracy Delay Disable-Detection Threshold RDLY = 47kΩ, DL fall to DH rise 67.5 4.0 90.0 112.5 ns 4.7 V Note 1: Specifications are production tested at TA = +25°C. Maximum and minimum limits are guaranteed by design and characterization. _______________________________________________________________________________________ 3 MAX8552 ELECTRICAL CHARACTERISTICS (continued) Typical Operating Characteristics (VCC = VDLY = 5V, CHS_LOAD = CLS_LOAD = 3000pF, 50% duty ratio.) PACKAGE-POWER DISSIPATION vs. CAPACITIVE LOAD ON DH AND DL C: CHS = 1500pF; CLS = 3300pF A C B 250 200 150 150 100 100 50 50 A 200 400 600 800 1000 RISE TIME 16 14 12 10 8 FALL TIME 6 4 2 VCC = 6.5V 0 1000 1000 1500 2000 2500 3000 3500 4000 4500 5000 1200 2000 3000 4000 PWM FREQUENCY (kHz) CAPACITANCE (pF) CAPACITANCE (pF) DH RISE AND FALL TIMES vs. CAPACITIVE LOAD DH AND DL RISE AND FALL TIMES vs. TEMPERATURE CONTROL-CIRCUITRY CURRENT vs. PWM FREQUENCY 15 10 FALL TIME DH RISE 16 14 1.0 DL RISE VCC = 6.5V 12 0.8 DH FALL 10 8 DL FALL 6 0.6 VCC = 5V 0.4 2 5 1.2 5000 MAX8552 toc06 20 18 IGND (mA) RISE TIME RISE AND FALL TIME (ns) 25 MAX8552 toc04 0 18 CDH = CDL 0 0 RISE AND FALL TIME (ns) 300 200 VCC = 6.5V C C: fS = 1MHz 350 300 250 B: fS = 600kHz 400 MAX8552 toc03 B PD (mW) PD (mW) 350 B: CHS = 3300pF; CLS = 5600pF 20 MAX8552 toc05 400 A: fS = 300kHz 450 RISE AND FALL TIME (ns) A: CHS = 3300pF; CLS = 3300pF 450 500 MAX8552 toc01 500 DL RISE AND FALL TIMES vs. CAPACITIVE LOAD MAX8552 toc02 PACKAGE-POWER DISSIPATION vs. PWM FREQUENCY VEN = 0V 0.2 4 0 0 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 -40 -20 0 20 40 60 80 100 120 0 200 400 600 800 1000 PWM FREQUENCY (kHz) PROPAGATION DELAY vs. TEMPERATURE PROGRAMMABLE DELAY (tDLY) vs. RDLY TYPICAL APPLICATION CIRCUIT SWITCHING WAVEFORMS 20 15 PWM FALL TO DH FALL 10 PWM RISE TO DL FALL 5 MAX8552 toc08 25 200 180 PROGRAMMABLE DELAY (ns) DL FALL TO DH RISE 160 VPWM 5V/div 140 120 VLX 100 1200 MAX8552 toc09 TEMPERATURE (°C) MAX8552 toc07 CAPACITANCE (pF) 30 PROPAGATION DELAY (ns) MAX8552 High-Speed, Wide-Input, Single-Phase MOSFET Driver 10V/div 80 60 VDL 5V/div 40 20 0 0 -40 -20 0 20 40 60 TEMPERATURE (°C) 4 80 100 120 5 25 45 65 85 105 125 20V/div VDH 100ns/div RDLY (kΩ) _______________________________________________________________________________________ High-Speed, Wide-Input, Single-Phase MOSFET Driver PIN NAME FUNCTION 1 VCC Input Supply Voltage. Connect to a supply voltage in the 4.5V to 6.5V range. Bypass to PGND with a 2.2µF or larger capacitor, and bypass to GND with a 0.47µF or larger capacitor. 2 DL External Synchronous-Rectifier N-MOSFET Gate-Driver Output. Swings between VCC and PGND. Anticrowbar feature prevents DL from turning on until DH is off and (LX - PGND) < 2V. DL is pulled to GND in shutdown. 3 PGND Power Ground 4 GND Analog Ground 5 DLY Dead-Time Delay Programming Input. Connect a resistor from DLY to GND to set the dead-time delay between when DL falls and when DH rises. Connect DLY to VCC to disable the delay function. See the Typical Operating Characteristics for RDLY selection. 6 PWM PWM Input. DH is high when PWM is high; DL is high when PWM is low. Input frequency can be as high as 1.2MHz for the 10-pin µMAX package and as high as 2MHz for the 10-pin TDFN package. 7 EN Enable Input. Drive high to enable output drivers. Drive low to disable output drivers and place the IC in low-power shutdown mode. 8 LX Switching Node and Inductor Connection. Low power supply for the DH high-side gate driver. Connect to the source of the high-side N-MOSFET and the drain of the low-side N-MOSFET, as well as the switched side of the inductor. 9 DH External High-Side N-MOSFET Gate-Driver Output. Swings between LX and BST. Anticrowbar feature delays DH from turning on until DL is off. An additional user-programmable delay can be added. DH is pulled to LX in shutdown. 10 BST Boost Flying-Capacitor Connection. Gate-drive power supply for DH high-side gate driver. Connect a 0.47µF or larger capacitor between BST and LX. — Exposed Paddle* Exposed Paddle. Connect to GND. *10-pin TDFN only. _______________________________________________________________________________________ 5 MAX8552 Pin Description High-Speed, Wide-Input, Single-Phase MOSFET Driver MAX8552 Timing Diagram tpDHf tpDLf PWM tfDL DL tpDHr tpDLr trDL (tDLY)* LX trDH tfDH DH *WHEN RDLY IS USED, tpDHr BECOMES THE LONGER OF THE USER-PROGRAMMABLE TIME DELAY, tDLY, OR THE ADAPTIVE DEAD TIME, tpDHr. DRAWING IS NOT TO SCALE. Functional Diagram BST MAX8552 DHON PWM DH DHOFF LX DRIVE LOGIC VCC EN UVLO DELAY LOGIC DLON DLOFF VCC DL PGND DLY DELAY PROGRAM LXLOWDETECT 6 _______________________________________________________________________________________ High-Speed, Wide-Input, Single-Phase MOSFET Driver MOSFET Gate Drivers (DH, DL) The high-side driver (DH) has a 1.3Ω (typ) sourcing resistance and 0.7Ω sinking resistance, resulting in 4A peak sourcing current and 7A peak sinking current with a 5V supply voltage. The low-side driver (DL) has a typical 1.0Ω sourcing resistance and 0.5Ω sinking resistance, yielding 5A peak sourcing current and 10A peak sinking current. This reduces switching losses, making the MAX8552 ideal for both high-frequency and highoutput-current applications. Shoot-Through Protection and Programmable Delay (tDLY) The MAX8552 incorporates adaptive shoot-through protection for the switching transition after the high-side MOSFET turns off and before the low-side MOSFET turns on and vice versa. The low-side driver turns on only when the LX voltage falls below 2.4V. Furthermore, the delay time between the low-side MOSFET turn-off and high-side MOSFET turn-on can be adjusted by selecting the value of R1 (see the RDLY Selection section). Undervoltage Lockout When VCC is below the UVLO threshold (3.5V typ), DH and DL are held low. Once VCC is above the UVLO threshold and while PWM is low, DL is driven high and DH is driven low. This prevents the output of the converter from rising before a valid PWM signal is applied. EN When EN is low, the MAX8552 is in shutdown mode and the total input current is reduced to less than 1µA for power-sensitive applications. In shutdown mode, both DH and DL are held low. When EN goes high, the MAX8552 becomes active. Applications Information Decoupling of VCC VCC provides the supply voltage for the internal logic circuits. Bypass VCC with a 2.2µF or larger capacitor to PGND and a 0.47µF or larger capacitor to GND to limit noise to the internal circuitry. Connect these bypass capacitors as close to the IC as possible. Boost Flying-Capacitor Selection The MAX8552 uses a bootstrap circuit to generate the necessary drive voltage (V DH) to fully enhance the high-side N-MOSFET. The selected high-side MOSFET determines appropriate boost capacitance values (C6 in the Typical Application Circuit, Figure 1), according to the following equation: CBST = QGATE / ∆VBST where QGATE is the total gate charge of the high-side MOSFET and ∆VBST is the voltage variation allowed on the high-side MOSFET driver. Choose ∆VBST = 0.1V to 0.2V when determining CBST. The boost flying-capacitor should be a low-equivalent series resistance (ESR) ceramic capacitor. RDLY Selection Connect DLY to VCC to disable the programmable delay function and default to the adaptive delay time. To program a longer specific delay time between the low-side MOSFET driver turn-off and the high-side MOSFET turnon, connect a delay resistor, RDLY, between DLY and GND (R1 in the Typical Application Circuit, Figure 1). See the Typical Operating Characteristics to select RDLY. Avoiding dV/dt Turning on the Low-Side MOSFET At high input voltages, fast turn-on of the high-side MOSFET can momentarily turn on the low-side MOSFET due to the high dV/dt appearing at the drain of the low-side MOSFET. The high dV/dt causes a current flow through the Miller capacitance (CRSS) and the input capacitance (CISS) of the low-side MOSFET. Improper selection of the lowside MOSFET that results in a high ratio of CRSS/CISS makes the problem more severe. To avoid this problem, minimize the ratio of CRSS/CISS when selecting the low-side MOSFET. Adding a 1Ω resistor between BST and C BST can slow the high-side MOSFET turn-on. Similarly, adding a small capacitor from the gate to the source of the high-side MOSFET has the same effect. However, both methods work at the expense of increased switching losses. _______________________________________________________________________________________ 7 MAX8552 Detailed Description The MAX8552 single-phase gate driver, along with the MAX8524/MAX8525 multiphase controllers, provide flexible one- to eight-phase CPU core-voltage supplies. The 1.0Ω/1.3Ω driver resistance allows up to 30A output current per phase. Each MOSFET driver in the MAX8552 is capable of driving 3000pF capacitive loads with only 12ns propagation delay and 11ns (typ) rise and fall times, allowing operation up to 1.2MHz per phase. Adaptive dead time controls MOSFET turn-on, and user-programmable dead time provides additional flexibility for high-side MOSFET turn-on. This maximizes converter efficiency, while allowing operation with a variety of MOSFETs and PWM-controller ICs. An undervoltage-lockout circuit allows proper power-on sequencing. The PWM signal input is both TTL and CMOS compatible. An enable input allows total driver shutdown (<0.1µA typ) for power-sensitive portable applications. MAX8552 High-Speed, Wide-Input, Single-Phase MOSFET Driver VCC 4.5V TO 6.5V D1 1 C5 4.7µF C4 0.47µF 4 7 ON 5 OFF VCC BST GND DH EN MAX8552 LX C1 10µF 10 9 8 N1 C2 10µF C3 10µF VIN 6V TO 24V N2 C6 0.47µF VOUT 1.45V AT 25A L1 DLY DL 2 N3 N4 R1 C7–C10 390µF 6 PWM CONTROL SIGNAL PWM PGND 3 Figure 1. Typical Application Circuit Table 1. Typical Component Values (500kHz Operation, 25A/Phase Output Current) DESIGNATION PART 10µF, 25V ceramic capacitor C4 4.7µF, 10V ceramic capacitor Taiyo Yuden LMK316 BJ475ML C5, C6 0.47µF, 10V ceramic capacitor Taiyo Yuden LMK107BJ474KA C7–C10 Taiyo Yuden TMK432BJ106MM 390µF/2V SP capacitor Panasonic EEFUE0D391XR D1 30V, 200mA, VF = 0.5V Schottky diode Fairchild BAT54S L1 0.66µH/29A, 0.9mΩ typical RDC resistance Panasonic PCC-NX3 N1, N2 30V, 14A N-MOSFET International Rectifier IRF7821 N3, N4 30V, 18A N-MOSFET International Rectifier IRF7832 6kΩ - 125kΩ = 1%, 1/8W resistor Panasonic R1 8 DESCRIPTION C1, C2, C3 _______________________________________________________________________________________ High-Speed, Wide-Input, Single-Phase MOSFET Driver 1) Place all decoupling capacitors as close to their respective IC pins as possible. 2) Minimize the length of the high-current loop from the input capacitor, the upper switching MOSFET, and the low-side MOSFET back to the input-capacitor negative terminal. 3) Provide enough copper area at and around the switching MOSFETs and inductors to aid in thermal dissipation. 4) Connect PGND of the MAX8552 as close as possible to the source of the low-side MOSFETs. 5) Keep LX away from sensitive analog components and nodes. Place the IC and the analog components on the opposite side of the board from the power-switching node if possible. A sample layout is available in the MAX8552 evaluation kit. Chip Information TRANSISTOR COUNT: 638 PROCESS: BiCMOS Pin Configurations TOP VIEW VCC 1 DL 2 PGND 3 GND 4 DLY 10 BST MAX8552 5 10 BST DL 2 9 DH 9 DH 8 LX 7 EN GND 4 7 EN PWM DLY 5 6 PWM 6 µMAX 3mm x 4.9mm VCC 1 PGND 3 MAX8552 8 LX TDFN 3mm x 3mm _______________________________________________________________________________________ 9 MAX8552 Layout Guidelines The MAX8552 MOSFET driver sources and sinks large currents to drive MOSFETs at high switching speeds. The high di/dt can cause unacceptable ringing if the trace lengths and impedances are not well controlled. The following PC board layout guidelines are recommended when designing with the MAX8552: Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.) e 10LUMAX.EPS MAX8552 High-Speed, Wide-Input, Single-Phase MOSFET Driver 4X S 10 10 INCHES H ÿ 0.50±0.1 0.6±0.1 1 1 0.6±0.1 BOTTOM VIEW TOP VIEW D2 MILLIMETERS MAX DIM MIN 0.043 A 0.006 A1 0.002 A2 0.030 0.037 D1 0.116 0.120 D2 0.114 0.118 E1 0.116 0.120 E2 0.114 0.118 H 0.187 0.199 L 0.0157 0.0275 L1 0.037 REF b 0.007 0.0106 e 0.0197 BSC c 0.0035 0.0078 0.0196 REF S α 0∞ 6∞ MAX MIN 1.10 0.05 0.15 0.75 0.95 2.95 3.05 2.89 3.00 2.95 3.05 2.89 3.00 4.75 5.05 0.40 0.70 0.940 REF 0.177 0.270 0.500 BSC 0.090 0.200 0.498 REF 0∞ 6∞ E2 GAGE PLANE A2 c A b A1 α E1 D1 FRONT VIEW L L1 SIDE VIEW PROPRIETARY INFORMATION TITLE: PACKAGE OUTLINE, 10L uMAX/uSOP APPROVAL DOCUMENT CONTROL NO. 21-0061 10 ______________________________________________________________________________________ REV. I 1 1 High-Speed, Wide-Input, Single-Phase MOSFET Driver 6, 8, &10L, DFN THIN.EPS L A D D2 A2 PIN 1 ID 1 N 1 C0.35 b E PIN 1 INDEX AREA [(N/2)-1] x e REF. E2 DETAIL A e k A1 CL CL L L e e A DALLAS SEMICONDUCTOR PROPRIETARY INFORMATION TITLE: PACKAGE OUTLINE, 6, 8 & 10L, TDFN, EXPOSED PAD, 3x3x0.80 mm NUMBER OF LEADS SHOWN ARE FOR REFERENCE ONLY APPROVAL DOCUMENT CONTROL NO. 21-0137 REV. 1 D 2 COMMON DIMENSIONS SYMBOL A MIN. MAX. 0.70 0.80 D 2.90 3.10 E 2.90 3.10 A1 0.00 0.05 L k 0.20 0.40 0.25 MIN. A2 0.20 REF. PACKAGE VARIATIONS PKG. CODE N D2 E2 e JEDEC SPEC b T633-1 6 1.50±0.10 2.30±0.10 0.95 BSC MO229 / WEEA 0.40±0.05 1.90 REF T833-1 8 1.50±0.10 2.30±0.10 0.65 BSC MO229 / WEEC 0.30±0.05 1.95 REF T1033-1 10 1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05 2.00 REF [(N/2)-1] x e DALLAS SEMICONDUCTOR PROPRIETARY INFORMATION TITLE: PACKAGE OUTLINE, 6, 8 & 10L, TDFN, EXPOSED PAD, 3x3x0.80 mm APPROVAL DOCUMENT CONTROL NO. 21-0137 REV. D 2 2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11 © 2003 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products. MAX8552 Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to www.maxim-ic.com/packages.)