Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Description M/A-COM’s PH1214-110M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-110M can produce 110 watts of output power with medium pulse length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability. Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Broadband Test Fixture Impedance Absolute Maximum Rating at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Rating 70 3.0 10.5 300 Units V V A W Tstg Tj -65 to +200 200 °C °C f (GHz) Z IF (Ω) Z OF (Ω) 1.20 1.30 1.40 4.7 - j4.4 4.5 - j3.3 4.5 - j2.3 4.4 - j3.3 3.0 - j2.8 2.3 - j1.8 TEST FIXTURE INPUT CIRCUIT 50Ω ZIF TEST FIXTURE OUTPUT CIRCUIT ZOF 50Ω Electrical Specifications at 25°C Symbol BVCES ICES RTH(JC) PO GP η RL VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Collector-Emitter Breakdown Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 50 mA VCE = 40 V VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz Min 70 110 7.4 50 9 - Max 5.5 0.50 3:1 1.5:1 Units V mA °C/W W dB % dB V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Test Fixture Electrical Schematic Electrical Schematic Parts List C1, C2 Top View PH1214-110M 100 pF ATC size A C3 50 uF 50 Volts Q1 PH1214-110M Board Type Rogers 6010.5 .025” Thick, ER = 10.5 Note: 1. Dimensions are in mils. V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.