MA-COM PH1214-110M

Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
PH1214-110M
PH1214-110M
Radar Pulsed Power Transistor - 110 Watts,
1.20-1.40 GHz, 150µs Pulse, 10% Duty
1
Features
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Outline Drawing
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Description
M/A-COM’s PH1214-110M is a silicon bipolar NPN power
transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars
such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power
applications, the PH1214-110M can produce 110 watts of output
power with medium pulse length (150µS) at 10 percent duty
cycle. The transistor is housed in a 2-lead rectangular metalceramic flange package, with internal input and output
impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term
reliability.
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
Rating
70
3.0
10.5
300
Units
V
V
A
W
Tstg
Tj
-65 to +200
200
°C
°C
f (GHz)
Z IF (Ω)
Z OF (Ω)
1.20
1.30
1.40
4.7 - j4.4
4.5 - j3.3
4.5 - j2.3
4.4 - j3.3
3.0 - j2.8
2.3 - j1.8
TEST FIXTURE
INPUT
CIRCUIT
50Ω
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50Ω
Electrical Specifications at 25°C
Symbol
BVCES
ICES
RTH(JC)
PO
GP
η
RL
VSWR-T
VSWR-S
Parameter
Collector-Emitter Breakdown
Collector-Emitter Breakdown
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Test Conditions
IC = 50 mA
VCE = 40 V
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
VCC = 40 V, Pin = 20 W, f = 1.2, 1.3, 1.4 GHz
Min
70
110
7.4
50
9
-
Max
5.5
0.50
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty
1
Test Fixture Electrical Schematic
Electrical Schematic Parts List
C1, C2
Top View
PH1214-110M
100 pF ATC size A
C3
50 uF 50 Volts
Q1
PH1214-110M
Board Type
Rogers 6010.5 .025” Thick, ER = 10.5
Note:
1. Dimensions are in mils.
V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.