MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters OUTLINE DRAWING 4MIN. package 4MIN. 1 assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=23dBm(TYP.) 2 @f=8GHz 2 • High linear power gain GLP=9dB(TYP.) @f=8GHz • High reliability and stability 0.5±0.15 3 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE • IG RECOMMENDED BIAS CONDITIONS • VDS=6V 1 GATE • ID=100mA 2 SOURCE • Refer to Bias Procedure 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W ˚C ˚C *1:TC=25˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) gm GLP P1dB Rth(ch-c) IG=-200µA IG=-200µA VGS=-3V,VDS=0V VGS=0V,VDS=3V VDS=3V,ID=100µA VDS=3V,ID=100mA VDS=6V,ID=100mA,f=8GHz Min -8 -8 – 150 -1.5 70 7 Limits Typ – – – 200 – 90 9 -4.5 – – V V µA mA V mS dB VDS=6V,ID=100mA,f=8GHz 21.8 23.0 – dBm – – 125 ˚C/W Parameter Test conditions Gate to drain breakdown voltage Gate to source breakdown voltage Gate to source leakage current Saturated drain current Gate source cut-off voltage Transconductance Linear power gain Output power at 1dB gain compression Thermal resistance *1 ∆Vf method Max – – 20 250 Unit *1:Channel to ambient June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET TYPICAL CHARACTERISTICS (Ta=25˚C) ID vs. VDS 200 VGS=-0.5V/step VGS=0V 100 0 4 2 0 6 10 8 DRAIN TO SOURCE VOLTAGE VDS(V) PO vs. Pin (f=8GHz) 30 PO vs. Pin (f=12GHz) Gain:10dB ID=100mA 30 8 6 4 2 25 Gain:10dB ID=100mA 8 6 4 2 25 20 PO 20 PO 15 15 10 10 5 5 VDS=6V VDS=4V 0 -5 0 5 10 15 20 INPUT POWER Pin(dBm) VDS=6V VDS=4V 0 25 -5 0 5 10 15 20 25 INPUT POWER Pin(dBm) June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET S11 ,S22 vs. f. S21 ,S12 vs. f. +90˚ +j50 +j25 +j100 S21 12.0GHz 0.5GHz +j250 +j10 S12 0.5GHz 12.0GHz 25 0 50 100 250 ±180˚ 6 5 0.5GHz 12.0GHz 4 3 2 1 0 0˚ I S 21 I 12.0GHz S22 -j10 -j250 0.1 0.5GHz S11 -j25 -j100 -j50 Ta=25˚C VDS=6V ID=100mA 0.2 -90˚ S PARAMETERS (Ta=25˚C,VDS=6V,ID=100mA) Freq. (GHz) Magn. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 0.899 0.874 0.848 0.822 0.796 0.771 0.745 0.719 0.713 0.706 0.700 0.694 0.691 0.689 0.686 0.683 0.677 0.670 0.664 0.657 0.645 0.632 0.620 0.608 S11 Angle(deg.) -56.8 -69.4 -82.1 -94.7 -107.4 -120.0 -132.7 -145.3 -153.3 -161.3 -169.3 -177.3 176.9 171.1 165.2 159.4 153.1 146.9 140.6 134.3 127.8 121.3 114.8 108.3 Magn. 6.115 5.682 5.248 4.815 4.382 3.949 3.515 3.082 2.863 2.645 2.426 2.207 2.090 1.973 1.856 1.739 1.671 1.602 1.534 1.466 1.413 1.360 1.308 1.255 S21 Angle(deg.) 140.3 130.4 120.5 110.6 100.6 90.8 80.9 71.0 63.3 55.6 47.9 40.2 33.9 27.5 21.2 14.8 8.5 2.1 -4.3 -10.6 -17.0 -23.4 -29.7 -36.1 Magn. 0.047 0.049 0.050 0.052 0.054 0.056 0.057 0.059 0.060 0.062 0.063 0.064 0.068 0.073 0.077 0.081 0.089 0.096 0.104 0.111 0.118 0.126 0.133 0.140 S12 Angle(deg.) 52.1 49.3 46.4 43.6 40.8 38.0 35.1 32.3 33.3 34.3 35.2 36.2 37.6 39.0 40.4 41.8 40.5 39.3 38.0 36.7 33.2 29.8 26.3 22.8 Magn. 0.471 0.462 0.452 0.442 0.432 0.422 0.413 0.403 0.412 0.421 0.431 0.440 0.458 0.476 0.494 0.512 0.530 0.549 0.567 0.585 0.601 0.618 0.635 0.651 S22 Angle(deg.) -25.2 -32.7 -40.1 -47.5 -54.9 -62.4 -69.8 -77.2 -84.2 -91.1 -98.1 -105.0 -110.3 -115.5 -120.8 -126.0 -130.8 -135.5 -140.3 -145.0 -149.4 -153.9 -158.3 -162.7 K MSG/MAG (dB) 0.371 0.394 0.431 0.485 0.558 0.657 0.789 0.964 1.006 1.064 1.142 1.245 1.202 1.172 1.153 1.146 1.072 1.011 0.962 0.922 0.893 0.867 0.844 0.823 21.2 20.7 20.2 19.7 19.1 18.5 17.9 17.2 16.3 14.8 13.6 12.4 12.1 11.8 11.5 11.0 11.1 11.6 11.7 11.2 10.8 10.4 9.9 9.5 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004