VISHAY VF40M120C

New Product
VF40M120C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
1
2
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
3
• Halogen-free according to IEC 61249-2-21 definition
VF40M120C
PIN 1
TYPICAL APPLICATIONS
PIN 2
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
120 V
IFSM
250 A
VF at IF = 20 A
0.64 V
TJ max.
150 °C
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
VF40M120C
UNIT
VRRM
120
V
40
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rating of change (rated VR)
IF(AV)
20
IFSM
250
dV/dt
10 000
A
V/μs
Isolation voltage from thermal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Revision: 11-Jan-12
Document Number: 89471
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VF40M120C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage per diode
VF (1)
IF = 5 A
IF = 10 A
TA = 125 °C
Reverse current per diode
-
0.64
-
0.79
0.89
0.46
-
UNIT
V
0.54
0.72
TA = 25 °C
4
-
μA
TA = 125 °C
3
-
mA
-
500
μA
6
32
mA
IR (2)
TA = 25 °C
VR = 120 V
MAX.
0.54
0.64
IF = 20 A
VR = 90 V
TYP.
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 20 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
VF40M120C
UNIT
RθJC
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.76
4W
50/tube
Tube
VF40M120C-M3/4W
RATINGS AND CHARACTERISTICS CURVES
18.0
50
Resistive or Inductive Load
D = 0.5
16.0
Average Power Loss (W)
Average Forward Rectified Current (A)
(TA = 25 °C unless otherwise noted)
40
30
20
10
14.0
D = 0.1
12.0
D = 1.0
10.0
8.0
6.0
T
4.0
2.0
Mounted on Specific Heatsink
0
D = 0.8
D = 0.3
D = 0.2
D = tp/T
tp
0.0
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 11-Jan-12
0
2
4
6
8
10 12 14 16 18 20 22 24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Document Number: 89471
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
VF40M120C
www.vishay.com
Vishay General Semiconductor
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
1000
100
0.1
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Instantaneous Forward Voltage (V)
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
0.0001
20
40
60
80
100
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.404 (10.26)
0.384 (9.75)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.076 (1.93) REF.
45° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.671 (17.04)
0.651 (16.54)
PIN
1
2
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
Revision: 11-Jan-12
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Document Number: 89471
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 12-Mar-12
1
Document Number: 91000