BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions (in mm): Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 12° • Comliant to RoHS Directive 2002/95/EC accordance to WEEE 2002/96/EC 94 8638-1 and in Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 DESCRIPTION APPLICATIONS BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch. • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) BPW17N 1.0 ± 12 450 to 1040 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW17N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 32 V Emitter collector voltage VECO 5 V Collector current UNIT IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 55 °C PV 100 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t≤3s Tsd 260 °C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 450 K/W Rev. 1.8, 23-Aug-11 Document Number: 81516 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW17N www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 125 100 75 RthJA = 450 K/W 50 25 0 0 20 40 60 100 80 Tamb - Ambient Temperature (°C) 94 8308 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. IC = 1 mA V(BR)CEO 32 Collector emitter dark current VCE = 20 V, E = 0 Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 PARAMETER Collector emitter breakdown voltage Ee = 1 Collector light current λ = 950 nm, VCE = 5 V mW/cm2, TYP. MAX. UNIT ICEO 1 200 nA CCEO 8 pF 1.0 mA V 0.5 Ica Angle of half sensitivity ϕ ± 12 deg Wavelength of peak sensitivity λp 825 nm λ0.1 450 to 1040 nm Range of spectral bandwidth Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA Collector emitter saturation voltage 0.3 VCEsat V Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 4.8 Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5.0 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 120 kHz μs BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.0 Ica rel - Relative Collector Current ICEO - Collector Dark Current (nA) 104 3 10 VCE = 20 V 102 101 0 10 1.8 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 20 94 8235 40 60 80 Tamb - Ambient Temperature (°C) Fig. 1 - Collector Dark Current vs. Ambient Temperature Rev. 1.8, 23-Aug-11 0 100 94 8239 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Collector Current vs. Ambient Temperature Document Number: 81516 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW17N www.vishay.com Vishay Semiconductors 12 ton / toff -Turn on / Turn off Time (µs) 1 0.1 V CE = 5 V λ = 950 nm 0.01 0.1 (mW/cm2) λ = 950 nm Ee = 1 mW/cm 2 1 0.5 mW/cm 2 0.2 mW/cm 2 1 10 toff 2 ton 0 V CE - Collector Emitter Voltage (V) 4 8 16 12 I C - Collector Current (mA) Fig. 6 - Turn-on/Turn-off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 400 100 600 800 1000 λ - Wavelength (nm) 94 8241 Fig. 4 - Collector Light Current vs. Collector Emitter Voltage Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 20 10° 20° 30° Srel - Relative Radiant Sensitivity CCEO - Collector Emitter Capacitance (pF) 4 f = 1 MHz 16 12 8 4 40° 1.0 0.9 50° 0.8 60° 0.7 70° ϕ - Angular Displacement Ica - Collector Light Current (mA) 10 94 8242 6 94 8238 Fig. 3 - Collector Light Current vs. Irradiance 0.1 0.1 8 10 1 Ee - Irradiance 94 8313 V CE = 5 V RL = 100 Ω λ = 950 nm 10 0 0.001 0.01 S ( λ)rel - Relative Spectral Sensitivity Ica - Collector Light Current (mA) 10 80° 0 0.1 94 8240 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage Rev. 1.8, 23-Aug-11 0.6 0.4 0.2 0 94 8243 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81516 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW17N www.vishay.com Vishay Semiconductors ± 0.15 PACKAGE DIMENSIONS in millimeters 2.4 R1 .65 E 3.3 C ± 0.15 ± 0.1 1.55 (2) ± 0.3 2.9 ± 0.3 1.8 ± 0.1 Area not plane 0.5 + 0.2 - 0.1 1.5 ± 0.25 3.4 29.8 ± 0.5 Chip position 0.4 + 0.15 technical drawings according to DIN specifications 2.54 nom. 6.544-5042.01-4 Issue:1; 01.07.96 96 12187 Rev. 1.8, 23-Aug-11 Document Number: 81516 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000