BPV10 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 94 8390 • High bandwidth: 250 MHz at VR = 12 V • Fast response times DESCRIPTION • Angle of half sensitivity: ϕ = ± 20° BPV10 is a PIN photodiode with high speed and high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) 70 ± 20 380 to 1100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPV10 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE BPV10 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.9, 22-Nov-11 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 t ≤ 5 s, 2 mm from body Tsd 260 °C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Document Number: 81502 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 20 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current Reverse light current MIN. TYP. MAX. UNIT 1.0 1.3 V 1 5 nA 60 V VR = 0 V, f = 1 MHz, E = 0 CD 11 pF VR = 5 V, f = 1 MHz, E = 0 CD 3.8 pF EA = 1 klx VO 480 mV Ee = 1 mW/cm2, λ = 950 nm VO 450 mV EA = 1 klx IK 80 μA Ee = 1 mW/cm2, λ = 950 nm IK 65 μA 85 μA 70 μA EA = 1 klx, VR = 5 V Ira Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira VR = 5 V, λ = 950 nm Absolute spectral sensitivity 38 s(λ) 0.55 A/W Angle of half sensitivity ϕ ± 20 deg Wavelength of peak sensitivity λp 920 nm λ0.1 380 to 1100 nm Range of spectral bandwidth λ = 950 nm η 72 % Noise equivalent power VR = 20 V, λ = 950 nm NEP 3 x 10-14 W/√Hz Detectivity VR = 20 V, λ = 950 nm D 3 x 1012 cm√Hz/W Rise time VR = 50 V, RL = 50 Ω, λ = 820 nm tr 2.5 ns Fall time VR = 50 V, RL = 50 Ω, λ = 820 nm tf 2.5 ns Quantum efficiency BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 20 V 1 20 94 8436 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.9, 22-Nov-11 1.4 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81502 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10 www.vishay.com Vishay Semiconductors S ( λ)rel - Relative Spectral Sensitivity 100 10 VR = 5 V λ = 950 nm 1 0.1 Ira - Reverse Light Current (µA) 0.6 0.4 0.2 0 350 550 750 1150 950 λ - Wavelength (nm) 94 8440 Fig. 3 - Reverse Light Current vs. Irradiance 100 0.8 10 1 E e - Irradiance (mW/cm 2) 94 8437 1.0 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 λ = 950 nm 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 40° 1.0 0.9 50° 0.8 60° 70° 0.7 0.02 mW/cm 2 ϕ - Angular Displacement 0.1 0.01 Srel - Relative Sensitivity Ira - Reverse Light Current (µA) 1000 80° 1 0.1 1 100 10 0.6 0.4 0.2 0 94 8624 VR - Reverse Voltage (V) 94 8438 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 12 10 E=0 f = 1 MHz 8 6 4 2 0 0.1 94 8439 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.9, 22-Nov-11 Document Number: 81502 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV10 www.vishay.com Vishay Semiconductors 5.75 ± 0.15 PACKAGE DIMENSIONS in millimeters C ± 0.15 Chip position R 2.45 (sphere) ± 0.15 7.6 ± 0.3 8.6 + 0.2 - 0.1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 Area not plane 0.5 + 0.15 1.5 ± 0.25 1 0.8 < 0.7 34.8 ± 0.5 11.8 ± 0.3 (4.3) Ø5 A 2.54 nom. Drawing-No.: 6.544-5185.02-4 technical drawings according to DIN specifications Issue:1; 01.07.96 96 12199 Rev. 1.9, 22-Nov-11 Document Number: 81502 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000