TSKS5400S www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 30° 14354 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with detector TEKS5400 DESCRIPTION • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 The TSKS5400S is an infrared, 950 nm emitting diode in GaAs technology with high radiant power, molded in a clear plastic package. APPLICATIONS • Photointerrupters • Transmissive sensors, gap sensors • Reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 4.5 ± 30 950 800 TSKS5400S Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSKS5400S PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 2000 pcs, 2000 pcs/bulk Side view lens Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER VR 6 V Forward current IF 100 mA Surge forward current TEST CONDITION tp ≤ 100 μs Power dissipation Junction temperature UNIT IFSM 2 A PV 170 mW °C Tj 100 Operating temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 03-Sep-13 Document Number: 81074 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400S www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 270 K/W 80 60 40 100 80 60 RthJA = 270 K/W 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21321 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21322 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL Forward voltage PARAMETER IF = 100 mA, tp ≤ 20 ms VF Reverse voltage IR = 10 μA VR Temperature coefficient of VF MIN. TYP. MAX. 1.3 1.7 UNIT V 6 V IF = 100 mA TKVF - 1.3 VR = 0 V, f = 1 MHz, E = 0 Cj 50 Radiant intensity IF = 100 mA, tp ≤ 20 ms Ie Radiant power IF = 50 mA, tp ≤ 20 ms φe 10 mW IF = 50 mA TKφe - 1.0 %/K ϕ ± 30 deg Peak wavelength IF = 50 mA λp 950 nm Spectral bandwidth IF = 50 mA Δλ 50 nm IF = 100 mA tr 800 ns IF = 1 A, tp/T = 0.01, tp ≤ 10 μs tr 450 ns Junction capacitance Temperature coefficient of φe Angle of half sensitivity Rise time 2 4.5 mV/K pF 7 mW/sr BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 4 1.5 V F - Forward Voltage (V) I F - Forward Current (mA) 1.4 10 3 10 2 10 1 10 0 10 -1 0 94 7996 1 2 3 Fig. 3 - Pulse Forward Current vs. Forward Voltage Rev. 1.8, 03-Sep-13 1.3 1.2 1.1 1.0 0.9 0.8 -45 -30 -15 4 V F - Forward Voltage (V) I F = 10 mA 14347 0 15 30 45 60 75 90 Tamb - Ambient Temperature (°C) Fig. 4 - Forward Voltage vs. Ambient Temperature Document Number: 81074 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400S www.vishay.com Vishay Semiconductors 1.25 Φe rel - Relative Radiant Power Ie - Radiant Intensity (mw/sr) 100 10 1 t p /T = 0.001 t p = 100 µs 0.1 0.01 10 0 10 1 10 2 10 3 0.75 0.5 0.25 IF = 100 mA 0 900 10 4 I F - Forward Current (mA) 94 7913 1.0 λ - Wavelength (nm) 94 7994 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 0° Φ e - Radiant Power (mW) 100 10 1 1000 950 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.1 1 13718 10 100 1000 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current 0.6 0.4 0.2 0 0.2 0.4 0.6 14349 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 I F = 10 mA 1.4 I e rel; Φe rel 1.2 1.0 0.8 0.6 0.4 0.2 0.0 - 45 - 30 - 15 14348 0 15 30 45 60 75 90 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Rev. 1.8, 03-Sep-13 Document Number: 81074 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400S www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters ± 0.1 2.15 nom. 2.65 - 0.15 4.9 A 0.9 nom. X20:1 3.2 Optical center 0.2 A ere .5 Ø1 3.1 ± 0.1 4.9 ± 0.1 Sph 0.2 A 17.8 - 0.5 on molded case X 0.6 max. C 1.4 ± 0.1 on molded case A 0.45 + 0.10 - 0.05 0.10 0.4 +- 0.05 2.54 nom. Lead spacing is measured where the leads emerged from the package Protruded resin area where the leads emerged from the package 0.8 max. technical drawings according to DIN specifications Drawing-No.: 6.544-5306.51-4 Issue: 6; 04.07.02 14307 Rev. 1.8, 03-Sep-13 Document Number: 81074 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSKS5400S www.vishay.com Vishay Semiconductors TAPE AND AMMOPACK STANDARDS DIMENSIONS in millimeters Labeling: barcode-label see 5.6.4 16716 Rev. 1.8, 03-Sep-13 Measure limit over 20 index-holes: ± 1 Document Number: 81074 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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