V3PAN50 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement TMBS® SMPATM • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Top View Bottom View DO-221BC (SMPA) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 3.0 A VRRM 50 V IFSM 80 A VF at IF = 3.0 A (TA = 125 °C) 0.40 V TJ max. 150 °C Package DO-221BC (SMPA) Diode variation Single die Case: DO-221BC (SMPA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code V3PAN50 UNIT 3N5 Maximum repetitive peak reverse voltage VRRM 50 V Maximum DC forward current IF (1) 3.0 A Maximum DC reverse voltage VDC 35 V Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A TJ, TSTG - 40 to + 150 °C Operating junction and storage temperature range Note (1) Free air, mounted on recommended copper pad area Revision: 30-Jul-13 Document Number: 87909 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3PAN50 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A TA = 25 °C IF = 3.0 A Instantaneous forward voltage VF (1) IF = 1.5 A TA = 125 °C IF = 3.0 A TYP. MAX. 0.40 - 0.47 0.54 0.30 - 0.40 0.48 8 - μA 8.8 - mA - 600 μA 12 35 mA 480 - pF TA = 25 °C VR = 35 V TA = 125 °C Reverse current TA = 25 °C VR = 50 V Typical junction capacitance SYMBOL IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance SYMBOL V3PAN50 RJA (1) 100 RJM (1) 9 UNIT °C/W Note Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance RJA - junction to ambient; RJM - junction to mount (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.032 I 14 000 13" diameter plastic tape and reel V3PAN50-M3/I RATINGS AND CHARACTERISTICS CURVES 1.6 TM = 138 °C, RthJM = 9 °C/W 3.2 2.8 2.4 2 TA = 25 °C RthJA = 100 °C/W 1.6 1.2 0.8 TM measured at cathode band terminal PCB mount 0.4 0 D = 0.8 D = 0.5 1.4 Average Power Loss (W) Average Forward Rectified Current (A) (TA = 25 °C unless otherwise noted) D = 0.3 D = 0.2 1.2 D = 1.0 D = 0.1 1 0.8 0.6 T 0.4 D = tp/T 0.2 tp 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 Case Temperature (°C) (D=duty cycle=0.5) Average Forward Current (A) Fig. 1 - Maximum Forward Currernt Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 30-Jul-13 Document Number: 87909 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3PAN50 www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 50 T A = 150 °C 10 T A = 125 °C T A = 100 °C 1 T A = 25 °C 0.1 Junction to Ambient 100 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t -Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typcial Transient Thermal Impedance 110 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 Epoxy printed circiut board FR4 copper thickness = 70 μm 100 Thermal Resistance (°C/W) Instantaneous Reverse Current (mA) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1000 0.001 90 80 70 60 50 40 30 S (cm2) 20 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 7 8 9 Percent of Rated Peak Reverse Voltage (%) Copper Pad Areas (cm2) Fig. 4 - Typcial Reverse Leakage Characteristics Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Areas Junction Capacitance (pF) 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Revision: 30-Jul-13 Document Number: 87909 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V3PAN50 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-221BC (SMPA) 0.059 (1.50) 0.030 (0.75) 0.122 (3.10) 0.098 (2.50) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.087 (2.20) 0.063 (0.75) 0.059 (1.50) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout MAX. 0.037 (0.92) 0.039 (1.00) 0.035 (0.90) 0.012 (0.30) 0.006 (0.15) 0.087 (2.20) MIN. 0.060 (1.52) MIN. MIN. 0.122 (3.10) MIN. 0.059 (1.50) 0.217 (5.52) Revision: 30-Jul-13 Document Number: 87909 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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