SiP32467, SiP32468 50 mΩ, Slew Rate Controlled Load

SiP32467, SiP32468
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Vishay Siliconix
50 mΩ, Slew Rate Controlled Load Switch in WCSP
DESCRIPTION
FEATURES
The SiP32467 and SiP32468 are slew rate controlled
integrated high side load switches that operate in the input
voltage range from 1.2 V to 5.5 V.
• Low input voltage, 1.2 V to 5.5 V
• Low Ron, 54 mΩ/typ. at 3 V
• Slew rate control
This series of design features slew rate control, reverse
blocking when switch is off, output discharge, and control
logic pull up. The devices are logic low enabled.
• Compatible with 1.2 V to 3.3 V logic
• Reverse current blocking when switch is off
Available
• Integrated output discharge switch (SiP32468)
The SiP32467 and SiP32468 are available in compact
wafer level WCSP package, WCSP4 0.76 mm x 0.76 mm
with 0.4 mm pitch.
• Integrated pull up resistor at “EN”
• For enable “High” see SiP32460, SiP32461, and SiP32462
• 4-bump WCSP package
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Smart phones
• GPS and portable media players
• Tablet computers
• Medical and healthcare equipment
• Industrial and instrumentation
• Game consoles
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32467, SiP32468
CIN
COUT
EN
EN
GND
GND
GND
Fig. 1 - Typical Application Circuit
S14-0843-Rev. B, 28-Apr-14
Document Number: 67757
1
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ORDERING INFORMATION
PACKAGE
ton
(μs)
RDISCHARGE
MARK CODE
TEMPERATURE RANGE
SiP32467DB-T2-GE1
WCSP4 (2x2)
0.4 mm Pitch
300
No
AJ
-40 °C to +85 °C
SiP32468DB-T2-GE1
WCSP4 (2x2)
0.4 mm Pitch
300
Yes
AK
-40 °C to +85 °C
PART NUMBER
PIN CONFIGURATION
1
OUT
Index-Bump A1
A
A
B
GND
2
IN
2
IN
1
OUT
W
A
D
B
EN
Backside
EN
GND
Bumpside
Fig. 2 - WCSP 2 x 2 Package
DEVICE MARKING
Row 1
Dot + W
: Dot is A1 locator plus week code
Row 2
AB
: Mark code for part number
SiP32467 = AJ
SiP32468 = AK
PIN DESCRIPTION (WSCP Package)
PIN#
A1
NAME
FUNCTION
OUT
Switch output
A2
IN
Switch input
B1
GND
Ground connection
B2
EN
Switch on/off control. A pull up resistor is integrated
TRUTH TABLE
S14-0843-Rev. B, 28-Apr-14
EN
SWITCH
1
OFF
0
ON
Document Number: 67757
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
LIMIT
Reference to GND
-0.3 to 6.5
Output Voltage VOUT
Reference to GND
-0.3 to 6.5
Output Voltage VOUT
Pulse at 1 ms reference to GND (1)
-1.6
Reference to GND
-0.3 to 6.5
Supply Input Voltage VIN
Enable Input Voltage EN
Maximum Continuous Switch Current
UNIT
V
1.2
Maximum Pulse Switch Current
Pulse at 1 ms, 10 % duty cycle
ESD Rating (HBM)
Thermal Resistance
Maximum Power Dissipation
A
2
TA = 25 °C
4000
V
205
°C/W
300
mW
TEMPERATURE
Operating Temperature
-40 to 85
Operating Junction Temperature
125
Storage Temperature
°C
-65 to 150
Note
(1) Negative current injection up to 300 mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
ELECTRICAL PARAMETER
MINIMUM
TYPICAL
MAXIMUM
Input Voltage (VIN)
1.2
-
5.5
Output Voltage (VOUT)
1.2
-
5.5
UNIT
V
SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITION
UNLESS OTHERWISE SPECIFIED
VIN = 1.2 V to 5.5 V, TA = -40 °C to 85 °C
MIN.
TYP.
MAX.
VIN = 3.3 V, IOUT = 0 mA
-
6
8
LIMITS
UNIT
POWER SUPPLY
Quiescent Current
IQ
Shutdown Current
ISD
OUT = GND
-
0.01
2
Off Switch Current
IDS(off)
EN = VIN, OUT = GND
-
0.01
2
Reverse Blocking Current
I(in)RB
Out = 5 V, IN = 1.2 V, EN = 1.2 V, (Measured at IN pin)
-
0.01
1
Out = 5 V, IN = 0 V, EN = open, (Measured at IN pin)
-
0.01
1
μA
SWITCH RESISTANCE
On Resistance
RDS(on)
Discharge Switch On
Resistance
RPD
EN Pin Pull Up Resistor
REN
On Resistance Temperature
Coefficient
S14-0843-Rev. B, 28-Apr-14
TCRDS
IOUT = 500 mA, VIN = 1.2 V, TA = 25 °C
-
95
150
IOUT = 500 mA, VIN = 1.5 V, TA = 25 °C
-
80
120
IOUT = 500 mA, VIN = 1.8 V, TA = 25 °C
-
70
100
IOUT = 500 mA, VIN = 3 V, TA = 25 °C
-
54
65
IOUT = 500 mA, VIN = 5 V, TA = 25 °C
-
50
65
When VIN = 3 V at 25 °C
-
80
-
When VIN = 1.8 V at 25 °C
-
< 200
-
EN = 1.2 V
1
2.6
5
-
2800
mΩ
Ω
MΩ
ppm/°C
Document Number: 67757
3
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SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITION
UNLESS OTHERWISE SPECIFIED
VIN = 1.2 V to 5.5 V, TA = -40 °C to 85 °C
MIN.
TYP.
MAX.
LIMITS
UNIT
ON/OFF LOGIC
EN Input Low Voltage
VIL
VIN = 1.5 V
0.4
-
-
EN Input High Voltage
VIH
VIN = 5.5 V
-
-
1
Switch Turn-ON Delay Time
ton_DLY
RLOAD = 500 Ω , CL = 0.1 μF
VIN = 5 V
-
130
-
Switch Turn-ON Rise Time
tr
RLOAD = 500 Ω , CL = 0.1 μF
VIN = 5 V
-
170
-
toff
RLOAD = 500 Ω, CL = 0.1 μF,
(50 % VIN to 90 % VOUT)
-
2
-
V
SWITCHING SPEED
Switch Turn-OFF Delay Time
μs
BLOCK DIAGRAM
Reverse
Blocking
IN
EN
OUT
Control
Logic
Charge
Pump
Turn On
Slew Rate
Control
GND
for SiP32468 only
Fig. 3 - Functional Block Diagram
S14-0843-Rev. B, 28-Apr-14
Document Number: 67757
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8
9
7
8
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
6
5
4
3
2
VIN = 5.5 V
7
VIN = 5.0 V
6
VIN = 3.3 V
5
4
VIN = 2.5 V
3
VIN = 1.2 V
2
1
1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
- 40
5.5
0
20
60
80
Fig. 4 - Quiescent Current vs. Input Voltage
Fig. 7 - Quiescent Current vs. Temperature
100
20
SiP32468
SiP32467
IQ(OFF) - Off Supply Current (nA)
200
150
100
50
0
15
10
5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0
5.5
1.5
2.0
2.5
VIN (V)
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
Fig. 8 - Off Supply Current vs. Input Voltage
Fig. 5 - Off Supply Current vs. Input Voltage
10 000
100
SiP32468
1000
SiP32467
VIN = 5.5 V
IIQ(OFF) - Off Supply Current (nA)
IIQ(OFF) - Off Supply Current (nA)
40
Temperature (°C)
250
IQ(OFF) - Off Supply Current (nA)
- 20
VIN (V)
100
VIN = 5.0 V
10
VIN = 3.3 V
1
0.1
VIN = 2.5 V
0.01
10
VIN = 5.5 V
VIN = 5.0 V
1
0.1
VIN = 3.3 V
0.01
VIN = 1.2 V
VIN = 1.2 V
0.001
VIN = 2.5 V
0.001
- 40
- 20
0
20
40
60
80
100
- 40
- 20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Fig. 6 - Off Supply Current vs. Temperature
Fig. 9 - Off Supply Current vs. Temperature
S14-0843-Rev. B, 28-Apr-14
100
Document Number: 67757
5
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TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
250
10 000
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
1000
200
150
100
50
VIN = 5.5 V
100
VIN = 5.0 V
10
VIN = 3.3 V
1
VIN = 2.5 V
0.1
0.01
0
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
- 40
0
20
40
60
80
100
Temperature (°C)
Fig. 10 - Off Switch Current vs. Input Voltage
Fig. 13 - Off Switch Current vs. Temperature
64
105
IO = 0.2 A
VIN = 3.3 V
62
100
60
95
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
- 20
VIN (V)
110
90
85
80
IO = 0.5 A
75
IO = 1.5 A
70
IO = 1.0 A
65
60
VIN = 1.2 V
IO = 0.1 A
55
1.0
1.5
56
54
52
50
48
46
44
42
IO = 0.2 A
50
58
2.0
40
2.5
3.0
3.5
4.0
4.5
5.0
- 40
5.5
- 20
0
20
40
60
80
100
Temperature (°C)
VIN (V)
Fig. 11 - RDS(on) vs. Input Voltage
Fig. 14 - RDS(on) vs. Temperature
0
220
- 50
210
- 100
VIN = 1.2 V
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
200
- 200
- 250
tr - Rise Time (μs)
IIN - Input Current (nA)
- 150
VIN = 0 V
- 300
- 350
- 400
- 450
190
180
170
160
- 500
- 550
150
- 600
140
- 650
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VOUT (V)
Fig. 12 - Reverse Blocking Current vs. Output Voltage
S14-0843-Rev. B, 28-Apr-14
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 15 - Rise Time vs. Temperature
Document Number: 67757
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TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
0
180
VIN = 1.2 V
IIN - Input Current (nA)
-400
VIN = 0 V
-600
-800
-1000
-1200
VOUT = 5 V
-1400
VIN = 5 V
CL = 0.1 μF
R L = 500 Ω
170
td(on) - Turn-On Delay Time (μs)
-200
160
150
140
130
120
110
-1600
100
-1800
- 40
- 20
0
20
40
60
80
100
- 40
- 20
0
Temperature (°C)
20
80
100
Fig. 19 - Turn-on Delay Time vs. Temperature
0.9
85
SiP32468
RPD - Output Pulldown Resistance (Ω)
0.85
0.8
EN Threshold Voltage (V)
60
Temperature (°C)
Fig. 16 - Reverse Blocking Current vs. Temperature
VIH
0.75
VIL
0.7
0.65
0.6
0.55
0.5
0.45
0.4
80
VIN = 3.3 V
IOUT = 5 mA
75
70
65
60
55
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
- 40
- 20
VIN (V)
0
20
40
60
80
100
Temperature (°C)
Fig. 17 - EN Threshold Voltage vs. Input Voltage
Fig. 20 - Output Pulldown Resistance vs. Temperature
5.00
10.00
SiP32468
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
4.00
td(off) - Turn-Off Delay Time (μs)
td(off) - Turn-Off Delay Time (μs)
40
3.00
2.00
1.00
0.00
VIN = 5 V
CL = 0.1 μF
RL = 500 Ω
9.00
SiP32467
8.00
7.00
6.00
5.00
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 18 - Turn-off Delay Time vs. Temperature
S14-0843-Rev. B, 28-Apr-14
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Fig. 21 - Turn-off Delay Time vs. Temperature
Document Number: 67757
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TYPICAL WAVEFORMS
VEN (1V/div)
VEN (2V/div)
VOUT (2V/div)
VOUT (1V/div)
IOUT (10mA/div)
IOUT (10mA/div)
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
Time (400μs/div)
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
Fig. 25 - Turn-on Time
Fig. 22 - Turn-on Time
VEN (1V/div)
VEN (2V/div)
VOUT (1V/div)
VOUT (2V/div)
IOUT (10mA/div)
IOUT (10mA/div)
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
Time (1ms/div)
Fig. 26 - Turn-on Time
Fig. 23 - Turn-on Time
SiP32467
VEN (1V/div)
VEN (2V/div)
VOUT (2V/div)
VOUT (1V/div)
IOUT (10mA/div)
Time (200μs/div)
Fig. 24 - Turn-on Time
S14-0843-Rev. B, 28-Apr-14
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
IOUT (10mA/div)
Time (400μs/div)
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
Fig. 27 - Turn-off Time
Document Number: 67757
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TYPICAL WAVEFORMS
SiP32467
VEN (1V/div)
SiP32467
VEN (2V/div)
VOUT (1V/div)
VOUT (2V/div)
IOUT (10mA/div)
IOUT (10mA/div)
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
Time (40μs/div)
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Time (100μs/div)
Fig. 28 - Turn-off Time
Fig. 31 - Turn-off Time
SiP32468
SiP32467
VEN (2V/div)
VEN (1V/div)
VOUT (2V/div)
VOUT (1V/div)
IOUT (10mA/div)
IOUT (10mA/div)
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
Time (200μs/div)
VIN = 1.2V
RL = 500Ω
CL = 0.1μF
Time (200μs/div)
Fig. 29 - Turn-off Time
Fig. 32 - Turn-off Time
SiP32468
VEN (2V/div)
SiP32467
VEN (1V/div)
VOUT (2V/div)
VOUT (1V/div)
IOUT (10mA/div)
Time (40μs/div)
Fig. 30 - Turn-off Time
S14-0843-Rev. B, 28-Apr-14
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
IOUT (10mA/div)
Time (200μs/div)
VIN = 1.8V
RL = 500Ω
CL = 0.1μF
Fig. 33 - Turn-off Time
Document Number: 67757
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TYPICAL WAVEFORMS
SiP32468
SiP32468
VEN (5V/div)
VEN (2V/div)
VOUT (5V/div)
VOUT (1V/div)
IOUT (10mA/div)
Time (100μs/div)
VIN = 3.3V
RL = 500Ω
CL = 0.1μF
Fig. 34 - Turn-off Time
IOUT (10mA/div)
Time (10μs/div)
VIN = 5.5V
RL = 500Ω
CL = 0.1μF
Fig. 36 - Turn-off Time
SiP32468
VEN (5V/div)
VOUT (5V/div)
IOUT (10mA/div)
Time (10μs/div)
VIN = 5.0V
RL = 500Ω
CL = 0.1μF
Fig. 35 - Turn-off Time
S14-0843-Rev. B, 28-Apr-14
Document Number: 67757
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DETAILED DESCRIPTION
SiP32467 and SiP32468 are high side, slew rate controlled,
load switches. They incorporate a negative charge pump at
the gate to keep the gate to source voltage high when
turned on. This keeps the on resistance low at lower input
voltages. SiP32467 and SiP32468 are designed with slow
slew rate to minimize the inrush current during turn on.
These devices have a reverse blocking circuit, when
disabled, to prevent the current from going back to the input
when the output voltage is higher than the input voltage. The
SiP32467 can be used as a bi-directional switch and can be
turned ON and OFF when power is at either IN or OUT. The
SiP32468 has an output pull down resistor to discharge the
output capacitance when the device is off.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required, a
4.7 μF or larger capacitor for CIN is recommended in almost
all applications. The bypass capacitor should be placed as
physically close as possible to the input pin to be effective
in minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 μF capacitor across VOUT and GND is recommended
to insure proper slew operation. There is inrush current
through the output MOSFET and the magnitude of the
inrush current depends on the output capacitor, the bigger
the COUT the higher the inrush current. There are no ESR or
capacitor type requirement.
Enable
The EN pin is compatible with CMOS logic voltage levels. It
requires at least 1 V or above to fully shut down the device
and 0.4 V or below to fully turn on the device. There is a
2.6 MΩ resistor connected between EN pin and IN pin.
Protection Against Reverse Voltage Condition
This device contains a reverse blocking circuit. When
disabled (VEN greater than 1 V) this circuit keeps the output
current from flowing back to the input when the output
voltage is higher than the input voltage.
Vishay Siliconix
characteristic for the safe operating load current is the
thermal power dissipation of the package.
The maximum power dissipation in any application
is dependant on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal
resistance, θJ-A = 205 °C/W, and the ambient temperature,
TA, which may be expressed as:
P (max.)
=
T J (max.) - T A
θJ- A
=
125 - TA
205
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to
about 268 mW.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function
two things: the package power dissipation and the RDS(ON)
at the ambient temperature.
As an example let us calculate the worst case maximum
load current at TA = 70 °C. The worst case RDS(ON) at 25 °C
is 120 mΩ at VIN = 1.5 V. The RDS(ON) at 70 °C can be
extrapolated from this data using the following formula:
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT)
Where TC is 2800 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 120 mΩ x (1 + 0.0028 x (70 °C - 25 °C))
= 135 mΩ
The maximum current limit is then determined by
I LOAD (max.) <
P (max.)
R DS(ON )
which in this case is 1.99 A. Under the stated input voltage
condition, if the 1.99 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage
the device.
To avoid possible permanent damage to the device and
keep a reasonable design margin, it is recommended to
operate the device maximum up to 1.2 A only as listed in the
Absolute Maximum Ratings table.
Thermal Considerations
Due to physical limitations of the layout and assembly of the
device the maximum switch current is 1.2 A as stated in the
Absolute Maximum Ratings table. However, another limiting
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67757
S14-0843-Rev. B, 28-Apr-14
Document Number: 67757
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
WCSP4: 4 Bumps
(2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size)
Mark on backside of die
1
A
2
1
2
W
A
B
A
B
B
e
D
4 x Ø 0.15 to Ø 0.20
Solder mask dia. - Pad diameter + 0.1
0.4
e
4xØb
D
Pin 1 mark
A
0.4
Note 3
A1
Recommended Land Pattern
All dimensions in millimeters
Bump Note 2
DWG-No: 6004
Notes
(1) Laser mark on the backside surface of die
(2) Bumps are SAC396
(3) 0.05 max. coplanarity
DIM.
A
MILLIMETERS a
NOM.
MAX.
MIN.
0.515
0.530
0.545
0.0202
A1
b
0.208
0.250
e
D
INCHES
MIN.
0.260
0.760
MAX.
0.0208
0.0214
0.0081
0.270
0.0098
0.800
0.0182
0.400
0.720
NOM.
0.0102
0.0106
0.0157
0.0193
0.0203
Note
a. Use millimeters as the primary measurement.
S14-0844-Rev. C, 28-Apr-14
1
Document Number: 63459
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000