SiP32467, SiP32468 www.vishay.com Vishay Siliconix 50 mΩ, Slew Rate Controlled Load Switch in WCSP DESCRIPTION FEATURES The SiP32467 and SiP32468 are slew rate controlled integrated high side load switches that operate in the input voltage range from 1.2 V to 5.5 V. • Low input voltage, 1.2 V to 5.5 V • Low Ron, 54 mΩ/typ. at 3 V • Slew rate control This series of design features slew rate control, reverse blocking when switch is off, output discharge, and control logic pull up. The devices are logic low enabled. • Compatible with 1.2 V to 3.3 V logic • Reverse current blocking when switch is off Available • Integrated output discharge switch (SiP32468) The SiP32467 and SiP32468 are available in compact wafer level WCSP package, WCSP4 0.76 mm x 0.76 mm with 0.4 mm pitch. • Integrated pull up resistor at “EN” • For enable “High” see SiP32460, SiP32461, and SiP32462 • 4-bump WCSP package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Smart phones • GPS and portable media players • Tablet computers • Medical and healthcare equipment • Industrial and instrumentation • Game consoles TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32467, SiP32468 CIN COUT EN EN GND GND GND Fig. 1 - Typical Application Circuit S14-0843-Rev. B, 28-Apr-14 Document Number: 67757 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix ORDERING INFORMATION PACKAGE ton (μs) RDISCHARGE MARK CODE TEMPERATURE RANGE SiP32467DB-T2-GE1 WCSP4 (2x2) 0.4 mm Pitch 300 No AJ -40 °C to +85 °C SiP32468DB-T2-GE1 WCSP4 (2x2) 0.4 mm Pitch 300 Yes AK -40 °C to +85 °C PART NUMBER PIN CONFIGURATION 1 OUT Index-Bump A1 A A B GND 2 IN 2 IN 1 OUT W A D B EN Backside EN GND Bumpside Fig. 2 - WCSP 2 x 2 Package DEVICE MARKING Row 1 Dot + W : Dot is A1 locator plus week code Row 2 AB : Mark code for part number SiP32467 = AJ SiP32468 = AK PIN DESCRIPTION (WSCP Package) PIN# A1 NAME FUNCTION OUT Switch output A2 IN Switch input B1 GND Ground connection B2 EN Switch on/off control. A pull up resistor is integrated TRUTH TABLE S14-0843-Rev. B, 28-Apr-14 EN SWITCH 1 OFF 0 ON Document Number: 67757 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER CONDITIONS LIMIT Reference to GND -0.3 to 6.5 Output Voltage VOUT Reference to GND -0.3 to 6.5 Output Voltage VOUT Pulse at 1 ms reference to GND (1) -1.6 Reference to GND -0.3 to 6.5 Supply Input Voltage VIN Enable Input Voltage EN Maximum Continuous Switch Current UNIT V 1.2 Maximum Pulse Switch Current Pulse at 1 ms, 10 % duty cycle ESD Rating (HBM) Thermal Resistance Maximum Power Dissipation A 2 TA = 25 °C 4000 V 205 °C/W 300 mW TEMPERATURE Operating Temperature -40 to 85 Operating Junction Temperature 125 Storage Temperature °C -65 to 150 Note (1) Negative current injection up to 300 mA Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM Input Voltage (VIN) 1.2 - 5.5 Output Voltage (VOUT) 1.2 - 5.5 UNIT V SPECIFICATIONS PARAMETER SYMBOL TEST CONDITION UNLESS OTHERWISE SPECIFIED VIN = 1.2 V to 5.5 V, TA = -40 °C to 85 °C MIN. TYP. MAX. VIN = 3.3 V, IOUT = 0 mA - 6 8 LIMITS UNIT POWER SUPPLY Quiescent Current IQ Shutdown Current ISD OUT = GND - 0.01 2 Off Switch Current IDS(off) EN = VIN, OUT = GND - 0.01 2 Reverse Blocking Current I(in)RB Out = 5 V, IN = 1.2 V, EN = 1.2 V, (Measured at IN pin) - 0.01 1 Out = 5 V, IN = 0 V, EN = open, (Measured at IN pin) - 0.01 1 μA SWITCH RESISTANCE On Resistance RDS(on) Discharge Switch On Resistance RPD EN Pin Pull Up Resistor REN On Resistance Temperature Coefficient S14-0843-Rev. B, 28-Apr-14 TCRDS IOUT = 500 mA, VIN = 1.2 V, TA = 25 °C - 95 150 IOUT = 500 mA, VIN = 1.5 V, TA = 25 °C - 80 120 IOUT = 500 mA, VIN = 1.8 V, TA = 25 °C - 70 100 IOUT = 500 mA, VIN = 3 V, TA = 25 °C - 54 65 IOUT = 500 mA, VIN = 5 V, TA = 25 °C - 50 65 When VIN = 3 V at 25 °C - 80 - When VIN = 1.8 V at 25 °C - < 200 - EN = 1.2 V 1 2.6 5 - 2800 mΩ Ω MΩ ppm/°C Document Number: 67757 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix SPECIFICATIONS PARAMETER SYMBOL TEST CONDITION UNLESS OTHERWISE SPECIFIED VIN = 1.2 V to 5.5 V, TA = -40 °C to 85 °C MIN. TYP. MAX. LIMITS UNIT ON/OFF LOGIC EN Input Low Voltage VIL VIN = 1.5 V 0.4 - - EN Input High Voltage VIH VIN = 5.5 V - - 1 Switch Turn-ON Delay Time ton_DLY RLOAD = 500 Ω , CL = 0.1 μF VIN = 5 V - 130 - Switch Turn-ON Rise Time tr RLOAD = 500 Ω , CL = 0.1 μF VIN = 5 V - 170 - toff RLOAD = 500 Ω, CL = 0.1 μF, (50 % VIN to 90 % VOUT) - 2 - V SWITCHING SPEED Switch Turn-OFF Delay Time μs BLOCK DIAGRAM Reverse Blocking IN EN OUT Control Logic Charge Pump Turn On Slew Rate Control GND for SiP32468 only Fig. 3 - Functional Block Diagram S14-0843-Rev. B, 28-Apr-14 Document Number: 67757 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix 8 9 7 8 IQ - Quiescent Current (μA) IQ - Quiescent Current (μA) TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 6 5 4 3 2 VIN = 5.5 V 7 VIN = 5.0 V 6 VIN = 3.3 V 5 4 VIN = 2.5 V 3 VIN = 1.2 V 2 1 1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 40 5.5 0 20 60 80 Fig. 4 - Quiescent Current vs. Input Voltage Fig. 7 - Quiescent Current vs. Temperature 100 20 SiP32468 SiP32467 IQ(OFF) - Off Supply Current (nA) 200 150 100 50 0 15 10 5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 5.5 1.5 2.0 2.5 VIN (V) 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) Fig. 8 - Off Supply Current vs. Input Voltage Fig. 5 - Off Supply Current vs. Input Voltage 10 000 100 SiP32468 1000 SiP32467 VIN = 5.5 V IIQ(OFF) - Off Supply Current (nA) IIQ(OFF) - Off Supply Current (nA) 40 Temperature (°C) 250 IQ(OFF) - Off Supply Current (nA) - 20 VIN (V) 100 VIN = 5.0 V 10 VIN = 3.3 V 1 0.1 VIN = 2.5 V 0.01 10 VIN = 5.5 V VIN = 5.0 V 1 0.1 VIN = 3.3 V 0.01 VIN = 1.2 V VIN = 1.2 V 0.001 VIN = 2.5 V 0.001 - 40 - 20 0 20 40 60 80 100 - 40 - 20 0 20 40 60 80 Temperature (°C) Temperature (°C) Fig. 6 - Off Supply Current vs. Temperature Fig. 9 - Off Supply Current vs. Temperature S14-0843-Rev. B, 28-Apr-14 100 Document Number: 67757 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 250 10 000 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 1000 200 150 100 50 VIN = 5.5 V 100 VIN = 5.0 V 10 VIN = 3.3 V 1 VIN = 2.5 V 0.1 0.01 0 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 0 20 40 60 80 100 Temperature (°C) Fig. 10 - Off Switch Current vs. Input Voltage Fig. 13 - Off Switch Current vs. Temperature 64 105 IO = 0.2 A VIN = 3.3 V 62 100 60 95 RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) - 20 VIN (V) 110 90 85 80 IO = 0.5 A 75 IO = 1.5 A 70 IO = 1.0 A 65 60 VIN = 1.2 V IO = 0.1 A 55 1.0 1.5 56 54 52 50 48 46 44 42 IO = 0.2 A 50 58 2.0 40 2.5 3.0 3.5 4.0 4.5 5.0 - 40 5.5 - 20 0 20 40 60 80 100 Temperature (°C) VIN (V) Fig. 11 - RDS(on) vs. Input Voltage Fig. 14 - RDS(on) vs. Temperature 0 220 - 50 210 - 100 VIN = 1.2 V VIN = 5 V CL = 0.1 μF RL = 500 Ω 200 - 200 - 250 tr - Rise Time (μs) IIN - Input Current (nA) - 150 VIN = 0 V - 300 - 350 - 400 - 450 190 180 170 160 - 500 - 550 150 - 600 140 - 650 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VOUT (V) Fig. 12 - Reverse Blocking Current vs. Output Voltage S14-0843-Rev. B, 28-Apr-14 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 15 - Rise Time vs. Temperature Document Number: 67757 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 0 180 VIN = 1.2 V IIN - Input Current (nA) -400 VIN = 0 V -600 -800 -1000 -1200 VOUT = 5 V -1400 VIN = 5 V CL = 0.1 μF R L = 500 Ω 170 td(on) - Turn-On Delay Time (μs) -200 160 150 140 130 120 110 -1600 100 -1800 - 40 - 20 0 20 40 60 80 100 - 40 - 20 0 Temperature (°C) 20 80 100 Fig. 19 - Turn-on Delay Time vs. Temperature 0.9 85 SiP32468 RPD - Output Pulldown Resistance (Ω) 0.85 0.8 EN Threshold Voltage (V) 60 Temperature (°C) Fig. 16 - Reverse Blocking Current vs. Temperature VIH 0.75 VIL 0.7 0.65 0.6 0.55 0.5 0.45 0.4 80 VIN = 3.3 V IOUT = 5 mA 75 70 65 60 55 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 VIN (V) 0 20 40 60 80 100 Temperature (°C) Fig. 17 - EN Threshold Voltage vs. Input Voltage Fig. 20 - Output Pulldown Resistance vs. Temperature 5.00 10.00 SiP32468 VIN = 5 V CL = 0.1 μF RL = 500 Ω 4.00 td(off) - Turn-Off Delay Time (μs) td(off) - Turn-Off Delay Time (μs) 40 3.00 2.00 1.00 0.00 VIN = 5 V CL = 0.1 μF RL = 500 Ω 9.00 SiP32467 8.00 7.00 6.00 5.00 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 18 - Turn-off Delay Time vs. Temperature S14-0843-Rev. B, 28-Apr-14 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Fig. 21 - Turn-off Delay Time vs. Temperature Document Number: 67757 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS VEN (1V/div) VEN (2V/div) VOUT (2V/div) VOUT (1V/div) IOUT (10mA/div) IOUT (10mA/div) VIN = 1.2V RL = 500Ω CL = 0.1μF Time (400μs/div) VIN = 5.0V RL = 500Ω CL = 0.1μF Time (100μs/div) Fig. 25 - Turn-on Time Fig. 22 - Turn-on Time VEN (1V/div) VEN (2V/div) VOUT (1V/div) VOUT (2V/div) IOUT (10mA/div) IOUT (10mA/div) VIN = 1.8V RL = 500Ω CL = 0.1μF VIN = 5.5V RL = 500Ω CL = 0.1μF Time (100μs/div) Time (1ms/div) Fig. 26 - Turn-on Time Fig. 23 - Turn-on Time SiP32467 VEN (1V/div) VEN (2V/div) VOUT (2V/div) VOUT (1V/div) IOUT (10mA/div) Time (200μs/div) Fig. 24 - Turn-on Time S14-0843-Rev. B, 28-Apr-14 VIN = 3.3V RL = 500Ω CL = 0.1μF IOUT (10mA/div) Time (400μs/div) VIN = 1.2V RL = 500Ω CL = 0.1μF Fig. 27 - Turn-off Time Document Number: 67757 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS SiP32467 VEN (1V/div) SiP32467 VEN (2V/div) VOUT (1V/div) VOUT (2V/div) IOUT (10mA/div) IOUT (10mA/div) VIN = 1.8V RL = 500Ω CL = 0.1μF Time (40μs/div) VIN = 5.5V RL = 500Ω CL = 0.1μF Time (100μs/div) Fig. 28 - Turn-off Time Fig. 31 - Turn-off Time SiP32468 SiP32467 VEN (2V/div) VEN (1V/div) VOUT (2V/div) VOUT (1V/div) IOUT (10mA/div) IOUT (10mA/div) VIN = 3.3V RL = 500Ω CL = 0.1μF Time (200μs/div) VIN = 1.2V RL = 500Ω CL = 0.1μF Time (200μs/div) Fig. 29 - Turn-off Time Fig. 32 - Turn-off Time SiP32468 VEN (2V/div) SiP32467 VEN (1V/div) VOUT (2V/div) VOUT (1V/div) IOUT (10mA/div) Time (40μs/div) Fig. 30 - Turn-off Time S14-0843-Rev. B, 28-Apr-14 VIN = 5.0V RL = 500Ω CL = 0.1μF IOUT (10mA/div) Time (200μs/div) VIN = 1.8V RL = 500Ω CL = 0.1μF Fig. 33 - Turn-off Time Document Number: 67757 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS SiP32468 SiP32468 VEN (5V/div) VEN (2V/div) VOUT (5V/div) VOUT (1V/div) IOUT (10mA/div) Time (100μs/div) VIN = 3.3V RL = 500Ω CL = 0.1μF Fig. 34 - Turn-off Time IOUT (10mA/div) Time (10μs/div) VIN = 5.5V RL = 500Ω CL = 0.1μF Fig. 36 - Turn-off Time SiP32468 VEN (5V/div) VOUT (5V/div) IOUT (10mA/div) Time (10μs/div) VIN = 5.0V RL = 500Ω CL = 0.1μF Fig. 35 - Turn-off Time S14-0843-Rev. B, 28-Apr-14 Document Number: 67757 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32467, SiP32468 www.vishay.com DETAILED DESCRIPTION SiP32467 and SiP32468 are high side, slew rate controlled, load switches. They incorporate a negative charge pump at the gate to keep the gate to source voltage high when turned on. This keeps the on resistance low at lower input voltages. SiP32467 and SiP32468 are designed with slow slew rate to minimize the inrush current during turn on. These devices have a reverse blocking circuit, when disabled, to prevent the current from going back to the input when the output voltage is higher than the input voltage. The SiP32467 can be used as a bi-directional switch and can be turned ON and OFF when power is at either IN or OUT. The SiP32468 has an output pull down resistor to discharge the output capacitance when the device is off. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 4.7 μF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the input pin to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 μF capacitor across VOUT and GND is recommended to insure proper slew operation. There is inrush current through the output MOSFET and the magnitude of the inrush current depends on the output capacitor, the bigger the COUT the higher the inrush current. There are no ESR or capacitor type requirement. Enable The EN pin is compatible with CMOS logic voltage levels. It requires at least 1 V or above to fully shut down the device and 0.4 V or below to fully turn on the device. There is a 2.6 MΩ resistor connected between EN pin and IN pin. Protection Against Reverse Voltage Condition This device contains a reverse blocking circuit. When disabled (VEN greater than 1 V) this circuit keeps the output current from flowing back to the input when the output voltage is higher than the input voltage. Vishay Siliconix characteristic for the safe operating load current is the thermal power dissipation of the package. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance, θJ-A = 205 °C/W, and the ambient temperature, TA, which may be expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 205 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 268 mW. So long as the load current is below the 1.2 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C is 120 mΩ at VIN = 1.5 V. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT) Where TC is 2800 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 120 mΩ x (1 + 0.0028 x (70 °C - 25 °C)) = 135 mΩ The maximum current limit is then determined by I LOAD (max.) < P (max.) R DS(ON ) which in this case is 1.99 A. Under the stated input voltage condition, if the 1.99 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 1.2 A only as listed in the Absolute Maximum Ratings table. Thermal Considerations Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.2 A as stated in the Absolute Maximum Ratings table. However, another limiting Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67757 S14-0843-Rev. B, 28-Apr-14 Document Number: 67757 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix WCSP4: 4 Bumps (2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size) Mark on backside of die 1 A 2 1 2 W A B A B B e D 4 x Ø 0.15 to Ø 0.20 Solder mask dia. - Pad diameter + 0.1 0.4 e 4xØb D Pin 1 mark A 0.4 Note 3 A1 Recommended Land Pattern All dimensions in millimeters Bump Note 2 DWG-No: 6004 Notes (1) Laser mark on the backside surface of die (2) Bumps are SAC396 (3) 0.05 max. coplanarity DIM. A MILLIMETERS a NOM. MAX. MIN. 0.515 0.530 0.545 0.0202 A1 b 0.208 0.250 e D INCHES MIN. 0.260 0.760 MAX. 0.0208 0.0214 0.0081 0.270 0.0098 0.800 0.0182 0.400 0.720 NOM. 0.0102 0.0106 0.0157 0.0193 0.0203 Note a. Use millimeters as the primary measurement. S14-0844-Rev. C, 28-Apr-14 1 Document Number: 63459 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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