SiP32431 www.vishay.com Vishay Siliconix 1 A Slew Rate Controlled Load Switch with Reverse Blocking DESCRIPTION FEATURES The SiP32431 is a slew rate controlled high side switch with reverse blocking capability. The switch is of a low ON resistance p-channel MOSFET that supports continuous current up to 1 A. The SiP32431 operates with an input voltage from 1.5 V to 5.5 V. The SiP32431 features low input logic level to interface with low control voltage from microprocessors. This device has a very low operating current, typically 50 pA. The SiP32431 is available in lead (Pb)-free package options including 6 pin SC70-6, and 4 pin TDFN4 1.2 mm x 1.6 mm DFN4 packages. The operation temperature range is specified from -40 °C to +85 °C. The SiP32431 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications. • 1.5 V to 5.5 V input voltage range • Very low RDS(on), typically 105 mΩ at 5 V and 135 mΩ at 3 V for TDFN4 1.2 mm x 1.6 mm package • Typical 147 mΩ at 5 V and 178 mΩ at 3 V for SC70-6 package Available • Slew rate controlled turn-on time: 100 μs • Low quiescent current < 1 μA • Low shutdown current < 1 μA • Reverse blocking capability • SC70-6 and TDFN4 1.2 mm x 1.6 mm packages • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Cellular telephones • Digital still cameras • Personal digital assistants (PDA) • Hot swap supplies • Notebook computers • Personal communication devices • Portable Instruments TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32431 C IN 1 µF C OUT 0.1 µF ON/OFF GND ON/OFF GND GND Fig. 1 - SiP32431 Typical Application Circuit ORDERING INFORMATION TEMPERATURE RANGE -40 °C to 85 °C PACKAGE MARKING PART NUMBER SC70-6 MAxx SiP32431DR3-T1GE3 TDFN4 1.2 mm x 1.6 mm Dx SiP32431DNP3-T1GE4 Notes • x = lot code • -GE3 denotes halogen-free and RoHS-compliant • Please use the SiP32431DR3-T1GE3 to replace SiP32431DR3-T1-E3 S15-1821-Rev. C, 10-Aug-15 Document Number: 66597 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT Supply Input Voltage (VIN) Enable Input Voltage (VON/OFF) -0.3 to VIN +0.3 SC70-6 package 1.2 TDFN4 1.2 mm x 1.6 mm 1.4 VIN ≥ 2.5 V 3 Maximum Pulsed Current (IDM) VIN (pulsed at 1 ms, 10 % duty cycle) VIN < 2.5 V Junction Temperature (TJ) Power Dissipation (PD) a A 1.6 ESD Rating (HBM) Thermal Resistance (θJA) a V -0.3 to 6 Output Voltage (VOUT) Maximum Continuous Switch Current (Imax.) UNIT -0.3 to 6 4000 V -40 to 125 °C 6 pin SC70-6 b 220 4 pin TDFN4 1.2 mm x 1.6 mm c 170 6 pin SC70- 6 b 250 4 pin TDFN4 1.2 mm x 1.6 mm c 324 °C/W mW Notes a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 4.5 mW/°C above TA = 70 °C. c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE PARAMETER LIMIT UNIT Input Voltage Range (VIN) 1.5 to 5.5 V Operating Temperature Range -40 to 85 °C S15-1821-Rev. C, 10-Aug-15 Document Number: 66597 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix SPECIFICATIONS PARAMETER Operating Voltage c Quiescent Current Off Supply Current Off Switch Current Reverse Blocking Current VIN IQ IQ(off) ISD(off) IRB On-Resistance RDS(on) On-Resistance Temp.-Coefficient On/Off Input Low Voltage c LIMITS -40 °C TO 85 °C TEST CONDITIONS UNLESS SPECIFIED VIN = 5, TA = -40 °C to 85 °C (Typical values are at TA = 25 °C) SYMBOL On/off = active On/off = inactive, out = open On/off = inactive, out = 0 VOUT = 5.5 V, VIN = 0, Von/off = inactive SC70-6 VIN = 5 V, IL = 500 mA, TA = 25 °C TDFN4 SC70-6 VIN = 4.2 V, IL = 500 mA, TA = 25 °C TDFN4 SC70-6 VIN = 3 V, IL = 500 mA, TA = 25 °C TDFN4 SC70-6 VIN = 1.8 V, IL = 500 mA, TA = 25 °C TDFN4 SC70-6 VIN = 1.5 V, IL = 500 mA, TA = 25 °C TDFN4 TDRDS VIN ≥ 1.5 V to < 1.8 V VIN ≥ 1.8 V to < 2.7 V VIN ≥ 2.7 V to ≤ 5.5 V VIN ≥ 1.5 V to < 2.7 V VIN ≥ 2.7 V to < 4.2 V VIN ≥ 4.2 V to ≤ 5.5 V VOn/Off = 5.5 V VIL On/Off Input Low Voltage c VIH On/Off Input Leakage Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time ISINK td(on) t(on) td(off) VIN = 5 V, Rload = 10 Ω, TA = 25 °C UNIT MIN. a TYP. b MAX. a 1.5 1.3 1.5 1.8 - 0.00005 0.13 147 105 155 110 178 135 275 230 395 350 2800 20 140 4 5.5 1 1 1 1 V μA 230 250 290 mΩ 480 520 0.3 0.4 0.6 1 40 180 10 ppm/°C V μA μs Notes a. The algebriac convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing c. For VIN outside this range consult typical on/off threshold curve. PIN CONFIGURATION 1 OUT 6 N/C ON/OFF GND 2 5 GND ON/OFF 3 4 IN 4 1 OUT 2 GND GND IN 3 Bottom View Top View Fig. 2 - SC70-6 Package Fig. 3 - TDFN4 1.2 mm x 1.6 mm Package PIN DESCRIPTION PIN NUMBER SC70-6 TDFN4 4 3 2, 5 2 3 4 1 1 S15-1821-Rev. C, 10-Aug-15 NAME FUNCTION IN GND ON/OFF OUT This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 μF capacitor Ground connection Enable input This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 μF capacitor Document Number: 66597 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 300 0.12 VIN = 5 V ISD(OFF) - Off Switch Current (nA) IQ - Quiescent Current (nA) 0.10 0.08 0.06 0.04 0.02 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 200 150 100 50 0 - 40 5.5 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Fig. 4 - Quiescent Current vs. Input Voltage Fig. 7 - Off Switch Current vs. Temperature 350 550 for SC70-6 package 500 300 IL = 1.2 A 450 RDS - On-Resistance (mΩ) ISD(OFF) - Off Switch Current (nA) 250 250 200 150 100 400 IL = 500 mA 350 300 250 200 150 IL = 100 mA 50 100 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 50 1.0 6.0 1.5 2.0 2.5 VIN (V) 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 Fig. 8 - RDS(on) vs. VIN for SC70-6 Package Fig. 5 - Off Switch Current vs. Input Voltage 10 550 500 for TDFN4 package RDS - On-Resistance (mΩ) IQ - Quiescent Current (nA) 450 1 0.1 VIN = 5 V 0.01 400 IL = 1.2 A 350 300 IL = 500 mA 250 200 150 IL = 100 mA VIN = 3 V 0.001 - 40 - 20 0 20 40 100 60 80 100 Temperature (°C) Fig. 6 - Quiescent Current vs. Temperature S15-1821-Rev. C, 10-Aug-15 50 1.5 2.0 2.5 3.0 3.5 4.0 VIN (V) 4.5 5.0 5.5 Fig. 9 - RDS(on) vs. Input Voltage Document Number: 66597 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 180 ILOAD = 500 mA for TDFN4 package VIN = 0 V 160 100 RDS - On-Resistance (mΩ) IRB - Reverse Blocking Current (nA) 1000 10 1 VIN = 3 V 120 100 VIN = 5 V 0.1 80 0.01 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 60 - 40 5.5 - 20 0 20 40 60 80 VOUT (V) Temperature (°C) Fig. 10 - Reverse Blocking Current vs. VOUT Fig. 12 - RDS(on) vs. Temperature ILOAD = 500 mA for SC70-6 package IRB - Reverse Blocking Current (nA) 210 200 190 180 170 160 100 600 220 RDS - On-Resistance (mΩ) 140 VIN = 3 V VIN = 5 V 150 140 500 VOUT = 5.5 V VIN = 0 V 400 300 200 100 130 120 - 40 - 20 0 20 40 60 80 0 - 40 100 - 20 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Fig. 11 - RDS(on) vs. Temperature Fig. 13 - Reverse Blocking Current vs. Temperature 1.6 On/Off Threshold Voltage (V) 1.4 1.2 VIH 1.0 VIL 0.8 0.6 0.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VIN (V) Fig. 14 - On/Off Threshold vs. Input Voltage S15-1821-Rev. C, 10-Aug-15 Document Number: 66597 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix TYPICAL WAVEFORMS Fig. 15 - Switching (VIN = 3 V) Fig. 17 - Turn-Off (VIN = 3 V) Fig. 16 - Switching (VIN = 5 V) Fig. 18 - Turn-Off (VIN = 5 V) BLOCK DIAGRAM Reverse Blocking OUT IN Turn-On Slew Rate Control Level Shift ON/OFF GND Fig. 19 - Functional Block Diagram S15-1821-Rev. C, 10-Aug-15 Document Number: 66597 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix PCB LAYOUT Fig. 20 - Top, TDFN4 1.2 mm x 1.6 mm PCB Layout Fig. 21 - Bottom, TDFN4 1.2 mm x 1.6 mm PCB Layout DETAILED DESCRIPTION The SiP32431 is a p-channel MOSFET power switches designed for high-side slew rate controlled load-switching applications. Once turned on, the slew-rate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(on) of the MOSFET switch and minimize any associated power losses. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 μF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the SiP32431 to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 μF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP32431 turn on slew rate time. There are no ESR or capacitor type requirement. Enable The on/off pin is compatible with both TTL and CMOS logic voltage levels. S15-1821-Rev. C, 10-Aug-15 Protection Against Reverse Voltage Condition The SiP32431 contains a body snatcher that normally connect the body to the source (IN) when the device is enable. In case where the device is disabled but the VOUT is higher than the VIN, the n-type body is switched to OUT, reverse bias the body diode to prevent the current from going back to the input. Thermal Considerations The SiP32431 is designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 170 °C/W) the power pad of the device should be connected to a heat sink on the printed circuit board. The maximum power dissipation in any application is dependent on the maximum junction temperature, TJ (max.) = 125 °C, the junction-to-ambient thermal resistance for the TDFN4 1.2 mm x 1.6 mm package, θJ-A = 170 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: T J (max.) – T A 125 – T A P (max.) = --------------------------------- = ---------------------θJ – A 170 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 324 mW. So long as the load current is below the 1 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(on) at the ambient temperature. Document Number: 66597 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32431 www.vishay.com Vishay Siliconix As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(on) at 25 °C occurs at an input voltage of 1.5 V and is equal to 520 mΩ. The RDS(on) at 70 °C can be extrapolated from this data using the following formula RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x ΔT) Where TC is 3300 ppm/°C. Continuing with the calculation we have RDS(on) (at 70 °C) = 520 mΩ x (1 + 0.0033 x (70 °C - 25 °C)) = 597 mΩ The maximum current limit is then determined by P (max.) I LOAD (max.) < ---------------------R DS ( on ) which in case is 0.74 A. Under the stated input voltage condition, if the 0.74 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66597. S15-1821-Rev. C, 10-Aug-15 Document Number: 66597 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TDFN4 1.2 x 1.6 Case Outline D 4 D2 b 3 Pin #1 ID (Optional) 4 K E E2 3 1 2 e Index Area (D/2 x E/2) Bottom View A A1 Top View A3 1 L 2 Side View MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0.00 - 0.05 0.00 - 0.002 A3 0.15 REF. 0.006 b 0.20 0.25 0.30 0.008 0.010 0.012 D 1.15 1.20 1.25 0.045 0.047 0.049 D2 0.81 0.86 0.91 0.032 0.034 0.036 e 0.50 BSC 0.020 E 1.55 1.60 1.65 0.061 0.063 0.065 E2 0.45 0.50 0.55 0.018 0.020 0.022 0.35 0.010 K L 0.25 TYP. 0.25 0.30 0.010 TYP. 0.012 0.014 ECN: S11-2099-Rev. B, 07-Nov-11 DWG: 5995 Revision: 07-Nov-11 1 Document Number: 65734 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SC-70: 3/4/5/6-LEADS (PIC ONLY) 0.15 (0.006) D C e1 A A D N5 N4 N3 E/2 E1/2 E E/1 0.15 (0.006) C Pin 1 N1 N2 B e See Detail A C 0.10 (0.004) M C A b B U1 A2 A SEATING PLANE 0.10 (0.004) C A1 C H (b) 0.15 (0.0059) b1 c1 GAGE PLANE c Base Metal DETAIL A SECTIION A-A Pin Code N1 N2 N3 N4 N5 U L LEAD COUNT NOTES: 3 4 5 6 1. Dimensioning and tolerancing per ANSI Y14.5M-1994. − − 2 2 2. 2 2 3 3 Controlling dimensions: millimeters converted to inch dimensions are not necessarily exact. − 3 4 4 3. 3 − − 5 Dimension “D” does not include mold flash, protrusion or gate burr. Mold flash, protrusion or gate burr shall not exceed 0.15 mm (0.006 inch) per side. − 4 5 6 4. The package top shall be smaller than the package bottom. Dimension “D” and “E1” are determined at the outer most extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. Document Number: 73201 19-Nov-04 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.80 − 1.10 0.031 − 0.043 A1 0.00 − 0.10 0.000 − 0.004 A2 0.80 0.90 1.00 0.031 0.035 0.040 b 0.15 − 0.30 0.006 − 0.012 b1 0.15 0.20 0.25 0.006 0.008 0.010 c 0.08 − 0.25 0.003 − 0.010 c1 0.08 0.13 0.20 0.003 0.005 0.008 D 1.90 2.10 2.15 0.074 0.082 0.084 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.050 0.055 e 0.65 BSC 0.0255 BSC e1 1.30 BSC 0.0512 BSC L 0.26 0.36 0.46 0.010 0.014 0.018 U 0_ − 8_ 0_ − 8_ U1 4_ 10_ 4_ 10_ ECN: S-42145—Rev. A, 22-Nov-04 DWG: 5941 www.vishay.com 2 Document Number: 73201 19-Nov-04 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6 0.86 0.50 3 1 2 2.0 0.55 0.20 0.50 0.20 4 0.55 0.30 Recommended Minimum Pads Dimensions in mm Document Number: 66558 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000