VS-UFB130FA20 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop • Optimized for power conversion: welding and industrial SMPS applications SOT-227 • Easy to use and parallel • Industry standard outline • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY VR 200 V IF(AV) per module at TC = 126 °C 130 A trr 32 ns Type Modules - Diode FRED Pt® Package SOT-227 The VS-UFB130FA20 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR MAX. UNITS 200 V Continuous forward current per diode IF TC = 132 °C 65 Single pulse forward current per diode IFSM TC = 25 °C 890 PD TC = 132 °C 119 W Any terminal to case, t = 1 minute 2500 V - 55 to 175 °C Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures Revision: 22-Jul-13 VISOL TJ, TStg A Document Number: 93606 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM Reverse leakage current IRM Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. UNITS 200 - - IF = 60 A - 0.96 1.13 IF = 60 A, TJ = 175 °C - 0.75 0.89 VR = VR rated - 2 50 μA V TJ = 175 °C, VR = VR rated - - 1 mA VR = 200 V - 105 - pF UNITS DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TEST CONDITIONS - 32 - TJ = 25 °C - 42 - TJ = 125 °C - 68 - - 4.0 - - 9.0 - TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 100 V TJ = 25 °C - 82 - TJ = 125 °C - 295 - MIN. TYP. MAX. - - 0.72 ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting SYMBOL TEST CONDITIONS RthJC UNITS - - 0.36 - 0.10 - Weight - 30 - g Mounting torque - - 1.3 Nm Case to heatsink Case style Revision: 22-Jul-13 RthCS Flat, greased surface °C/W SOT-227 Document Number: 93606 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Vishay Semiconductors 1000 1000 100 TJ = 175 °C TJ = 25 °C 10 1 TJ = 175 °C 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 10 1 0.1 TJ = 25 °C 0.01 0.001 0 0.5 1 1.5 2 0 2.5 100 50 150 200 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Junction Capacitance - CT (pF) TJ = 25 °C 100 10 1 10 100 1000 Reverse Voltage - VR (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 PDM DC t1 Single pulse (thermal resistance) t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Revision: 22-Jul-13 Document Number: 93606 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Vishay Semiconductors 175 80 150 70 IF = 50 A Vrr = 200 V 60 125 trr (ns) Allowable Case Temperature (°C) www.vishay.com 100 DC 75 TJ = 125 °C 50 40 TJ = 25 °C 30 50 20 Square Wave (D = 0.5) Rated VR applied 25 10 0 0 25 50 75 100 125 150 175 0 100 200 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) 800 700 125 IF = 50 A Vrr = 200 V 600 100 RMS Limit 75 D = 0.05 D = 0.10 50 25 Qrr (nC) Average Power Loss (W) 150 500 TJ = 125 °C 400 300 D = 0.20 D = 0.33 200 D = 0.50 100 TJ = 25 °C DC 0 0 10 20 30 40 50 60 70 80 90 100 110 120 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) 0 100 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 22-Jul-13 Document Number: 93606 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 22-Jul-13 Document Number: 93606 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- UF B 130 F A 20 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Ultrafast rectifier 3 - Ultrafast Pt diffused 4 - Current rating (130 = 130 A) 5 - Circuit configuration (2 separate diodes, parallel pin-out) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (20 = 200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 1 2 4 3 1 2 F LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 22-Jul-13 Document Number: 93606 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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