VISHAY VS-30CPU04PBF

VS-30CPU04PbF, VS-30CPU04-N3
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Vishay Semiconductors
Ultrafast Rectifier, 2 x 15 A FRED Pt®
FEATURES
Base
common
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and
JEDEC-JESD47
1
3
Anode
Anode
2
1
2
Common
cathode
TO-247AC
qualified
according
to
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION/APPLICATION
FRED Pt® series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
2 x 15 A
VR
400 V
VF at IF
1.25 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
TEST CONDITIONS
VRRM
per leg
Average rectified forward current
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
IF(AV)
VALUES
UNITS
400
V
15
Rated VR, TC = 149 °C
30
IFSM
TC = 25 °C
200
IFRM
Rated VR, TC = 149 °C, square wave, 20 kHz
TJ, TStg
A
30
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
400
-
-
IF = 15 A
-
1.17
1.25
IR = 100 μA
IF = 15 A, TJ = 150 °C
-
0.93
1.12
VR = VR rated
-
0.3
10
TJ = 150 °C, VR = VR rated
-
30
500
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 400 V
-
28
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
12
-
nH
Revision: 26-Jun-12
Document Number: 94013
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-30CPU04PbF, VS-30CPU04-N3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
36
60
TJ = 25 °C
-
46
-
TJ = 125 °C
UNITS
ns
-
80
-
-
3.6
-
-
8.7
-
TJ = 25 °C
-
84
-
TJ = 125 °C
-
345
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
-
0.8
1.5
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
-
0.4
-
-
6.0
-
-
0.21
-
oz.
-
12
(10)
kgf · cm
(lbf · in)
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 25 °C
TJ = 125 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 200 V
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
Weight
6.0
(5.0)
Mounting torque
Marking device
Revision: 26-Jun-12
Case style TO-247AC
°C/W
g
30CPU04
Document Number: 94013
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPU04PbF, VS-30CPU04-N3
www.vishay.com
Vishay Semiconductors
1000
10
TJ = 175 °C
TJ = 150 °C
TJ = 25 °C
1
0.1
0.2
TJ = 175 °C
100
IR - Reverse Current (µA)
IF - Instantaneous
Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
TJ = 25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
100
200
300
400
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
TJ = 25 °C
10
0
100
200
300
400
ZthJC - Thermal Impedance (°C/W)
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 26-Jun-12
Document Number: 94013
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPU04PbF, VS-30CPU04-N3
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Vishay Semiconductors
100
IF = 30 A
IF = 16 A
IF = 8 A
90
170
80
70
160
trr (ns)
Allowable Case Temperature (°C)
180
DC
150
Square wave (D = 0.50)
Rated VR applied
60
50
40
30
140
See note (1)
20
130
0
5
10
15
20
VR = 200 V
TJ = 125 °C
TJ = 25 °C
10
100
25
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
25
1000
20
15
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
10
5
Qrr (nC)
Average Power Loss (W)
RMS limit
DC
0
0
5
10
15
20
25
100
IF = 30 A
IF = 16 A
IF = 8 A
10
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
Revision: 26-Jun-12
Document Number: 94013
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPU04PbF, VS-30CPU04-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 26-Jun-12
Document Number: 94013
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-30CPU04PbF, VS-30CPU04-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
30
C
P
U
04
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (30 = 30 A)
3
-
Circuit configuration: C = Common cathode
4
-
TO-247AC
4
5
-
Ultrafast recovery
6
-
Voltage rating (04 = 400 V)
7
-
Environmental digit:
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
VS-30CPU04PbF
25
500
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-30CPU04-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 26-Jun-12
www.vishay.com/doc?95223
TO-247ACPbF
www.vishay.com/doc?95226
TO-247AC-N3
www.vishay.com/doc?95007
Document Number: 94013
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000