AOS Semiconductor Product Reliability Report AO4614/AO4614L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Jan 4, 2006 This AOS product reliability report summarizes the qualification result for AO4614. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4614 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications). AO6409L is a Green Product ordering option. AO4614 and AO4614L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V 6 -5 5 -4 20 -20 2 2 1.28 1.28 -55 to 150 -55 to 150 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation ID IDM TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG A W °C Thermal Characteristics : n-channel and p-channel Parameter Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Maximum Junctionto-Ambient Maximum Junctionto-Ambient Maximum Junctionto-Lead Symbol t ≤ 10s SteadyState SteadyState t ≤ 10s SteadyState SteadyState RθJA RθJL RθJA RθJL Device Typ Max n-ch 48 62.5 n-ch 74 110 n-ch 35 50 p-ch 48 62.5 p-ch 74 110 p-ch 35 50 Units °C/W II. Die / Package Information: AO4614 AO4614 (Green Compound) Standard sub-micron Standard sub-micron low voltage N channel process low voltage N channel process Process Package Type 8 lead SOIC Lead Frame Copper with Solder Plate Die Attach Silver epoxy Bond wire 2 mils Au wire Mold Material Epoxy resin with silica filler Filler%( Spherical/Flake) 90/10 Flammability Rating UL-94 V-0 Backside Metallization Ti / Ni / Ag Moisture Level Up to Level 1 * 8 lead SOIC Copper with Solder Plate Silver epoxy 2 mils Au wire Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / Ni / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4614 (Standard) & AO4614L (Green) Test Item Test Condition Time Point Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°c Green: 168hr 85°c /85RH +3 cycle reflow@260°c Temp = 150°c, Vgs=100% of Vgsmax 0hr HTGB 168 / 500 hrs Lot Attribution Total Sample size Number of Failures Standard: 49 lots Green: 16 lots 9625 pcs 0 7 lots 574 pcs 0 (Note A*) 77+5 pcs / lot 1000 hrs HTRB HAST Temp = 150°c, Vds=80% of Vdsmax 130 +/- 2°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 168 / 500 hrs 1000 hrs 100 hrs 7 lots (Note A*) Standard: 33 lots Green: 13 lots 574 pcs 0 77+5 pcs / lot 2530 pcs 0 50+5 pcs / lot Pressure Pot 121°c, 15+/-1 PSIG, RH=100% 96 hrs (Note B**) Standard: 49 lots Green: 16 lots 3575 pcs 0 50+5 pcs / lot Temperature Cycle -65 to 150°c, air to air, 0.5hr per cycle 250 / 500 cycles (Note B**) Standard: 49 lots Green: 15 lots 3520 pcs 0 50+5 pcs / lot (Note B**) DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°C 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AO4614and AO4614L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO4614and AO4614L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 14.3 MTTF = 7982 years In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4614). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2 (6×164) (168) (258) + 2 (164) (500) (258)] = 14.3 9 MTTF = 10 / FIT = 6.99 x 107hrs = 7982years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D