Reliability Report

AOS Semiconductor
Product Reliability Report
AO4600/AO4600L,
rev D
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Mar 7, 2007
This AOS product reliability report summarizes the qualification result for AO4600.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO4600
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package information
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
The AO4600 uses advanced trench technology to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs form a high-speed power inverter, suitable for a
multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259
specifications).
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Units
Max p-channel
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±12
±12
V
ID
6.9
-5
5.8
-4.2
40
-30
2
2
1.44
1.44
-55 to 150
-55 to 150
Continuous
Drain Current
TA=25°C
TA=70°C
Pulsed Drain Current
Power
Dissipation
IDM
TA=25°C
TA=70°C
Junction and Storage
Temperature Range
PD
TJ, TSTG
A
W
°C
Thermal Characteristics : n-channel and p-channel
Parameter
Maximum Junctionto-Ambient
Maximum Junctionto-Ambient
Maximum Junctionto-Lead
Symbol
t ≤ 10s
SteadyState
SteadyState
RθJA
RθJL
Device
Typ
Max
n-ch
48
62.5
n-ch
74
110
n-ch
35
40
Units
°C/W
II. Package Information:
AO4600
AO4600L (Green Compound)
Standard sub-micron
Standard sub-micron
low voltage N/P channel process low voltage N/P channel process
Package Type
8 lead SOIC
8 lead SOIC
Lead Frame
Copper with Ag spot
Copper with Ag spot
Die Attach
Silver epoxy
Silver epoxy
Bond wire
2 mils Au wire
2 mils Au wire
Mold Material
Epoxy resin with silica filler
Epoxy resin with silica filler
Filler% (Spherical/Flake) 90/10
100/0
Flammability Rating
UL-94 V-0
UL-94 V-0
Backside Metallization Ti / Ni / Ag
Ti / Ni / Ag
Moisture Level
Up to Level 1 *
Up to Level 1*
Process
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4600 (Standard) & AO4600L (Green)
Test Item
Test Condition
Time Point
Solder Reflow
Precondition
Standard: 1hr PCT+3
cycle reflow@260°C
Green: 168hr 85°C
/85%RH+3 cycle
reflow@260 °C
Temp = 150°C,
Vgs=100% of Vgsmax
0hr
HTGB
168 / 500 hrs
1000 hrs
Lot Attribution
Standard: 83 lots
Green: 29 lots
6 lots
(Note A*)
HTRB
Temp = 150°C,
Vds=80% of Vdsmax
168 / 500 hrs
1000 hrs
6 lots
(Note A*)
HAST
Pressure Pot
130 +/- 2°C, 85%RH,
33.3 psi,
Vgs = 80% of Vgs max
121°C, 29.7psi,
RH=100%
100 hrs
Standard: 81 lots
Green: 16 lots
Total Sample
size
17380 pcs
492 pcs
Number
of
Failures
0
0
77+5 pcs / lot
492 pcs
0
77+5 pcs / lot
5335 pcs
0
50+5 pcs / lot
96 hrs
(Note B**)
Standard: 83 lots
Green: 20 lots
5665 pcs
0
50+5 pcs / lot
Temperature
Cycle
-65°C to 150°C,
air to air,
250 / 500
cycles
(Note B**)
Standard: 87 lots
Green: 29 lots
6380 pcs
0
50+5 pcs / lot
(Note B**)
High
Temperature
Storage
Temp = 150°C
500/1000hrs
Standard: 24 lots
Green: 0 lot
1968 pcs
77+5 pcs / lot
(Note B**)
0
III. Result of Reliability Stress for AO4600 (Standard) & AO4600L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°C bake
150°C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
245°C
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AO4600 and
AO4600L burn-in data up to the published date.
Note B: The pressure pot, temperature cycle, HAST and HTS reliability data for AO4600 and
AO4600L comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 9.9
MTTF = 11530 years
In general,500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of
lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an
activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation).
AOS reliability group also routinely monitors the product reliability up to 1000 hr at and
performs the necessary failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO4600). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)]
= 1.83 x 109 / 2[(4×164) (168) (258) + (164) (500) (258) + (164) (1000) (258)]
= 9.9
MTTF = 109 / FIT = 1.01 x 108hrs = 11530years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D