AOS Semiconductor Product Reliability Report AO6602/AO6602L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com Jan 11, 2006 1 This AOS product reliability report summarizes the qualification result for AO6602. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO6602passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6602L is a Green Product ordering option. AO6602 and AO6602L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage Continuous Drain Current TA=25°C ±20 ±20 ID 3.1 -2.7 2.4 -2.1 12 -12 1.15 1.15 0.73 0.73 -55 to 150 -55 to 150 TA=70°C Pulsed Drain Current Power Dissipation VGS IDM TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Parameter Maximum Junction-toAmbient Maximum Junction-toAmbient Maximum Junction-toLead Symbol t ≤ 10s RθJA Steady-State Steady-State RθJL Typ Max 78 110 106 150 64 80 Units V V A W °C Units °C/W 2 II. Die / Package Information: Process AO6602 AO6602L (Green Compound) Standard sub-micron Standard sub-micron low voltage N channel process low voltage N channel process Package Type Lead Frame Die Attach Bond wire Mold Material Filler % (Spherical/Flake) Flammability Rating Backside Metallization Moisture Level 6 lead TSOP Copper with Solder Plate Silver epoxy 2 mils Au wire Epoxy resin with silica filler 90/10 UL-94 V-0 Ti / Ni / Ag Up to Level 1 * 6 lead TSOP Copper with Solder Plate Silver epoxy 2 mils Au wire Epoxy resin with silica filler 100/0 UL-94 V-0 Ti / Ni / Ag Up to Level 1* Note * based on info provided by assembler and mold compound supplier. III. Result of Reliability Stress for AO6602 (Standard) & AO6602L (Green) Test Item Test Condition Time Point Solder Reflow Precondition Standard: 1hr PCT+3 cycle reflow@260°C Green: 168hr 85°C/85%RH +3 cycle reflow@260°C Temp = 150°C, Vgs=100% of Vgsmax 0hr HTGB 168 / 500 hrs Lot Attribution Total Sample size Number of Failures Standard: 12 lots Green: 7 lots 2805 pcs 0 4 lots 328 pcs 0 (Note A*) 77+5 pcs / lot 1000 hrs HTRB Temp = 150°C, Vds=80% of Vdsmax 168 / 500 hrs 4 lots (Note A*) 328 pcs 0 77+5 pcs / lot 1000 hrs HAST 130 +/- 2°C, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs Standard: 12 lots Green: 6 lots 990 pcs 0 50+5 pcs / lot Pressure Pot 121°C, 15+/-1 PSIG, RH=100% 96 hrs (Note B**) Standard: 7 lots Green: 7 lots 770 pcs 0 50+5 pcs / lot Temperature Cycle -65°C to 150°C, air to air, 0.5hr per cycle 250 / 500 cycles (Note B**) Standard: 12 lots Green: 7 lots 1045 pcs 0 50+5 pcs / lot (Note B**) DPA CSAM Internal Vision Cross-section X-ray NA 5 5 5 5 5 5 0 NA 5 5 0 3 III. Result of Reliability Stress for AO6602 (Standard) & AO6602L (Green) Continues Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 230°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AO6602and AO6602L burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AO6602and AO6602L comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 10 MTTF = 11415 years In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability group also routinely monitors the product reliability up to 1000 hr at and performs the necessary failure analysis on the units failed for reliability test(s). The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO6602). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate =Chi2 x 109 / [2 (N) (H) (Af)] =1.83 x 109/[2 (164) (168) (258) + 2(2×164) (500) (258) + 2(164) (1000) (258)] = 10 9 MTTF = 10 / FIT = 1.0x 108hrs = 11415years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4 V. Quality Assurance Information Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual. Guaranteed Outgoing Defect Rate: < 25 ppm Quality Sample Plan: conform to Mil-Std-105D 5