AO4444L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AO4444L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 80V 11A RDS(ON) (at VGS=10V) < 12mΩ RDS(ON) (at VGS = 7V) < 14.5mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Maximum 80 ±25 C V 11 ID TA=70°C Units V 9 A IDM 80 Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C EAS, EAR 101 mJ TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev0: July 2009 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL °C -55 to 150 Typ 31 59 16 www.aosmd.com Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 6 AO4444L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=80V, VGS=0V 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.6 VGS=10V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A TJ=125°C VGS=7V, ID=10A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=11A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge 3 µA 100 nA 3.8 V A 10 12 18 22 11.6 14.5 mΩ 1 V 4.5 A 32 0.7 mΩ S 1900 2386 2865 pF 190 276 360 pF 60 100 140 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.8 1.2 Ω 30 38 46 nC VGS=10V, VDS=40V, ID=11A 10 13 16 nC 6 10 14 nC VGS=0V, VDS=40V, f=1MHz Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr IF=11A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs Qrr Units V 10 TJ=55°C gFS Max 80 VGS(th) ID(ON) IS Typ 13 VGS=10V, VDS=40V, RL=3.64Ω, RGEN=3Ω ns 9 ns 23 ns 5 ns 12 18 24 45 65 85 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July 2009 www.aosmd.com Page 2 of 6 AO4444L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 80 7V 60 ID(A) 60 ID (A) VDS=5V 8V 10V 80 6V 40 40 125°C 20 25°C 20 VGS=5V 0 0 0 1 2 3 4 5 0 2 18 2.2 16 2 14 VGS=7V 12 10 VGS=10V 8 6 6 8 10 VGS=10V ID=11A 1.8 1.6 1.4 1.2 VGS=7V ID=10A 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 25 ID=11A 1.0E+01 20 40 1.0E+00 125°C 15 IS (A) RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) Normalized On-Resistance RDS(ON) (mΩ) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 25°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 0 1.0E-05 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: July 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4444L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=40V ID=11A 3000 Capacitance (pF) VGS (Volts) 8 6 4 2 2000 1500 1000 Coss 500 0 Crss 0 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 1000 20 40 60 VDS (Volts) Figure 8: Capacitance Characteristics 80 1000.0 100.0 TA=25°C TA=100°C 100 TA=125°C ID (Amps) IAR (A) Peak Avalanche Current Ciss 2500 10.0 RDS(ON) limited 0.1 0.0 0.01 1 10 100 1000 Time in avalanche, tA (µs) Figure 9: Single Pulse Avalanche capability (Note C) 100µs 1.0 TA=150°C 10 10µs 1ms TJ(Max)=150°C TA=25°C 0.1 10ms 1 VDS (Volts) DC 10s 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev0: July 2009 www.aosmd.com Page 4 of 6 AO4444L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=75°C/W 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 25ºC 8 6 125ºC 110 Qrr 25ºC 2 1.5 10 4 80 2.5 25ºC trr 15 trr (ns) 140 125ºC 20 Irm (A) Irm 3 di/dt=800A/µs 10 170 Qrr (nC) 25 12 125ºC di/dt=800A/µs 1 125ºC 5 2 S 200 S 0.5 25ºC 0 0 0 5 10 15 20 25 0 0 30 25 Is=20A 125ºC 125º 10 Qrr 30 2 5 25ºC 0 0 20 200 400 600 800 0 1000 25ºC 1 125º 0.5 S 5 25ºC 0 www.aosmd.com 1.5 trr 15 di/dt (A/µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: July 2009 125ºC 40 10 Irm 30 2.5 trr (ns) 15 25 Is=20A 25 60 20 30 20 25ºC 15 35 Irm (A) Qrr (nC) 90 10 IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 120 5 S 50 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 5 of 6 AO4444L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: July 2009 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6