AO4444L

AO4444L
80V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AO4444L is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
ID (at VGS=10V)
80V
11A
RDS(ON) (at VGS=10V)
< 12mΩ
RDS(ON) (at VGS = 7V)
< 14.5mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
TA=25°C
Maximum
80
±25
C
V
11
ID
TA=70°C
Units
V
9
A
IDM
80
Avalanche Current C
IAS, IAR
45
A
Avalanche energy L=0.1mH C
EAS, EAR
101
mJ
TA=25°C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev0: July 2009
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
°C
-55 to 150
Typ
31
59
16
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Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4444L
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
VDS=80V, VGS=0V
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
2.6
VGS=10V, VDS=5V
80
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=11A
TJ=125°C
VGS=7V, ID=10A
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=5V, ID=11A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
3
µA
100
nA
3.8
V
A
10
12
18
22
11.6
14.5
mΩ
1
V
4.5
A
32
0.7
mΩ
S
1900
2386
2865
pF
190
276
360
pF
60
100
140
pF
VGS=0V, VDS=0V, f=1MHz
0.4
0.8
1.2
Ω
30
38
46
nC
VGS=10V, VDS=40V, ID=11A
10
13
16
nC
6
10
14
nC
VGS=0V, VDS=40V, f=1MHz
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
IF=11A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs
Qrr
Units
V
10
TJ=55°C
gFS
Max
80
VGS(th)
ID(ON)
IS
Typ
13
VGS=10V, VDS=40V, RL=3.64Ω,
RGEN=3Ω
ns
9
ns
23
ns
5
ns
12
18
24
45
65
85
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: July 2009
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Page 2 of 6
AO4444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
80
7V
60
ID(A)
60
ID (A)
VDS=5V
8V
10V
80
6V
40
40
125°C
20
25°C
20
VGS=5V
0
0
0
1
2
3
4
5
0
2
18
2.2
16
2
14
VGS=7V
12
10
VGS=10V
8
6
6
8
10
VGS=10V
ID=11A
1.8
1.6
1.4
1.2
VGS=7V
ID=10A
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
1.0E+02
25
ID=11A
1.0E+01
20
40
1.0E+00
125°C
15
IS (A)
RDS(ON) (mΩ)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
RDS(ON) (mΩ)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
25°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
1.0E-04
0
1.0E-05
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: July 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AO4444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=40V
ID=11A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
0
1000
20
40
60
VDS (Volts)
Figure 8: Capacitance Characteristics
80
1000.0
100.0
TA=25°C
TA=100°C
100
TA=125°C
ID (Amps)
IAR (A) Peak Avalanche Current
Ciss
2500
10.0
RDS(ON)
limited
0.1
0.0
0.01
1
10
100
1000
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note
C)
100µs
1.0
TA=150°C
10
10µs
1ms
TJ(Max)=150°C
TA=25°C
0.1
10ms
1
VDS (Volts)
DC
10s
10
100
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev0: July 2009
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Page 4 of 6
AO4444L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
25ºC
8
6
125ºC
110
Qrr
25ºC
2
1.5
10
4
80
2.5
25ºC
trr
15
trr (ns)
140
125ºC
20
Irm (A)
Irm
3
di/dt=800A/µs
10
170
Qrr (nC)
25
12
125ºC
di/dt=800A/µs
1
125ºC
5
2
S
200
S
0.5
25ºC
0
0
0
5
10
15
20
25
0
0
30
25
Is=20A
125ºC
125º
10
Qrr
30
2
5
25ºC
0
0
20
200
400
600
800
0
1000
25ºC
1
125º
0.5
S
5
25ºC
0
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1.5
trr
15
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev0: July 2009
125ºC
40
10
Irm
30
2.5
trr (ns)
15
25
Is=20A
25
60
20
30
20
25ºC
15
35
Irm (A)
Qrr (nC)
90
10
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
IS (A)
Figure 13: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
120
5
S
50
0
200
400
600
800
0
1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 5 of 6
AO4444L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0: July 2009
Vgs
Isd
L
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6