AO4409

AO4409
30V P-Channel MOSFET
General Description
Product Summary
The AO4409 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=-10V)
-30V
-15A
RDS(ON) (at VGS=-10V)
< 7.5mΩ
RDS(ON) (at VGS =-4.5V)
< 12mΩ
* RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
VDS
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Units
V
±20
V
-15
ID
TA=70°C
C
Maximum
-30
A
-12.8
IDM
-80
Avalanche Current C
IAS, IAR
30
A
Avalanche energy L=0.3mH C
TA=25°C
EAS, EAR
135
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.8.0: July 2013
3.1
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-5
TJ=55°C
-25
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-80
VGS=-10V, ID=-15A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-10A
gFS
Forward Transconductance
VDS=-5V, ID=-15A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
35
±100
nA
-2.7
V
6.2
7.5
8.2
11.5
9.5
12
A
50
-0.71
V
-5
A
6400
945
pF
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
100
120
Qg(4.5V) Total Gate Charge
51.5
Qgd
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-15A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
VGS=-10V, VDS=-15V, RL=1Ω,
RGEN=3Ω
nC
nC
14.5
nC
23
nC
14
ns
16.5
ns
76.5
ns
37.5
IF=-15A, dI/dt=100A/µs
pF
pF
3
Gate Source Charge
mΩ
S
2
Qgs
mΩ
-1
745
VGS=0V, VDS=0V, f=1MHz
µA
-1.9
5270
VGS=0V, VDS=-15V, f=1MHz
Units
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
36.7
ns
45
28
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.8.0: July 2013
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Page 2 of 5
AO4409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
VDS=-5V
-4V
-4.5V
50
50
-6V
40
-10V
30
-ID(A)
-ID (A)
40
-3.5V
30
125°C
20
20
25°C
10
10
VGS=-3V
0
0
0
1
2
3
4
0
5
12
1
1.5
2
2.5
3
3.5
4
1.6
Normalized On-Resistance
VGS=-4.5V
10
RDS(ON) (mΩ
Ω)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
6
VGS=-10V
4
2
ID=-15A
VGS=-10V
1.4
17
5
2
10
=-4.5V
1.2
VGS
1
0.8
0
5
10
15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20
1.0E+02
ID=-15A
1.0E+01
40
15
1.0E+00
-IS (A)
RDS(ON) (mΩ
Ω)
125°
10
25°
125°
1.0E-01
1.0E-02
25°
1.0E-03
5
1.0E-04
1.0E-05
0
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.8.0: July 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8000
VDS=-15V
ID=-15A
7000
8
Ciss
Capacitance (pF)
-VGS (Volts)
6000
6
4
5000
4000
3000
Coss
2000
2
1000
Crss
0
0
0
20
40
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
120
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
1000.0
TA=25°C
10.0
1000
100µs
RDS(ON)
limited
1ms
10ms
1.0
100
10
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
-ID (Amps)
100.0
10s
DC
1
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.8.0: July 2013
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Page 4 of 5
AO4409
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.8.0: July 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5