AON7700

AON7700
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
SRFETTM AON7700 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
40A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 7.2mΩ
RDS(ON) (at VGS=4.5V)
< 8.6mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
100
16
IDSM
TA=70°C
±12
28
IDM
TA=25°C
Units
V
40
ID
TC=100°C
Maximum
30
A
12
Avalanche Current C
IAS
17
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
14
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 3: May. 2012
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
10
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
26
PD
TC=100°C
Typ
30
60
4
°C
Max
40
75
4.8
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7700
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
TJ=125°C
100
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
±100
nA
2.2
V
5.5
7.2
9
11
VGS=4.5V, ID=10A
6.6
8.6
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=12A
45
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mA
1.7
VGS=10V, ID=12A
Output Capacitance
Units
V
0.5
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
0.7
V
30
A
1690
pF
175
pF
120
pF
1.4
2.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
31
44
nC
Qg(4.5V) Total Gate Charge
14
20
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=12A
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
0.7
4
nC
5
nC
6
ns
9
ns
27
ns
tf
Turn-Off Fall Time
4
ns
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=500A/µs
7
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
8
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: May 2012
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Page 2 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
60
VDS=5V
3.5V
60
4.5V
ID(A)
ID (A)
3V
40
40
125°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
25°C
1
5
10
2
2.5
3
3.5
4
Normalized On-Resistance
2
VGS=4.5V
8
RDS(ON) (mΩ
Ω)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
1.8
VGS=4.5V
ID=10A
1.6
17
5
2
VGS=10V10
1.4
1.2
ID=12A
1
0.8
2
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
25
1.0E+01
ID=12A
40
1.0E+00
15
125°C
IS (A)
RDS(ON) (mΩ
Ω)
20
125°C
1.0E-01
25°C
10
1.0E-02
5
25°C
1.0E-03
0
0
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: May 2012
2
4
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=15V
ID=12A
8
2000
Capacitance (pF)
VGS (Volts)
Ciss
6
4
1000
2
500
0
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
35
Coss
Crss
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
10µs
100.0
10.0
160
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
1500
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4.8°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: May 2012
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Page 4 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
25
40
Current rating ID(A)
Power Dissipation (W)
30
20
15
10
30
20
10
5
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
17
5
2
10
100
10
1
0.00001
0.001
0.1
0
18
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 3: May 2012
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Page 5 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.8
20A
0.7
10A
1.0E-02
0.6
VDS=30V
0.5
VSD (V)
IR (A)
1.0E-03
VDS=15V
1.0E-04
0.4
5A
0.3
IS=1A
0.2
1.0E-05
0.1
0
1.0E-06
50
100
150
0
200
Temperature (°C)
Figure 16: Diode Reverse Leakage Current vs.
Junction Temperature
15
12
100
150
200
Temperature (°C)
Figure 17: Diode Forward voltage vs. Junction
Temperature
15
3
di/dt=800A/µs
di/dt=800A/µs
125ºC
12
50
10
2.5
12
125ºC
25ºC
0
0
5
10
15
125ºC
trr
6
20
25
2
3
0
0
30
0
0
10
5
10
15
20
15
8
12
6
9
5
trr (ns)
4
125ºC
Irm (A)
Qrr
30
2.5
Is=12A
125ºC
25ºC
25
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
2
10
Qrr (nC)
0.5
25ºC
Is=12A
125ºC
1
125ºC
S
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
15
1.5
25ºC
4
Irm
3
9
25ºC
1.5
trr
125ºC
6
S
6
6
trr (ns)
25ºC
Qrr
2
Irm (A)
Qrr (nC)
8
9
S
0
1
S
25ºC
Irm
0
0
200
400
600
800
2
3
0
0
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 3: May 2012
0.5
25ºC
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AON7700
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 3: May 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7