AOT412/AOB412L 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V ID (at VGS=10V) 60A RDS(ON) (at VGS=10V) < 15.8mΩ RDS(ON) (at VGS = 7V) < 19.4mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View Top View TO-263 D2PAK Bottom View D D D D D G D S G AOT412 S D G S G Gate-Source Voltage VGS TC=25°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev2: Jul 2011 Steady-State Steady-State A IAS,IAR 47 A EAS,EAR 110 mJ 150 W 75 2.6 RθJA RθJC www.aosmd.com W 1.7 TJ, TSTG Symbol t ≤ 10s A 8.2 PDSM Junction and Storage Temperature Range V 6.6 PD TA=25°C ±25 44 IDSM TA=70°C Units V 140 IDM TA=25°C Continuous Drain Current Maximum 100 60 ID TC=100°C S S AOB412L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G -55 to 175 Typ 15 40 0.7 °C Max 18 48 1 Units °C/W °C/W °C/W Page 1 of 7 AOT412/AOB412L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 100 Typ 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ,ID=250µA 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 140 Units V VDS=100V, VGS=0V Zero Gate Voltage Drain Current Max µA 100 nA 3.2 3.8 V 13.2 15.8 25 30 VGS=7V, ID=20A TO220 15.5 19.4 VGS=10V, ID=20A TO263 12.9 15.5 15.2 30 19.1 Forward Transconductance VGS=7V, ID=20A TO263 VDS=5V, ID=20A mΩ S VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current VGS=10V, ID=20A TO220 RDS(ON) gFS Static Drain-Source On-Resistance TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2150 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs VGS=10V, VDS=50V, ID=20A Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime A 2680 mΩ mΩ mΩ 1 V 60 A 3220 pF 180 260 340 pF 60 100 140 pF 0.5 1 1.5 Ω 36 45 54 nC 14 17 20 nC 15 21 nC 9 VGS=10V, VDS=50V, RL=2Ω, RGEN=3Ω 19 ns 16 ns 27 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22 10 29 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 67 96 125 ns nC 2 A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: Jul 2011 www.aosmd.com Page 2 of 7 AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 VDS=5V 10V 120 7.5V 7V 80 6.5V 60 80 ID(A) ID (A) 100 60 40 6V 40 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 17 Normalized On-Resistance 2.6 16 RDS(ON) (mΩ ) 25°C 125°C 20 VGS=5.5V 20 VGS=7V 15 14 VGS=10V 13 12 2.4 VGS=10V ID=20A 2.2 2 17 5 2 10 VGS=7V 1.8 1.6 1.4 1.2 ID=20A 1 0.8 11 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 33 1.0E+02 ID=20A 1.0E+01 40 125°C 23 125°C 1.0E+00 IS (A) RDS(ON) (mΩ ) 28 18 25°C 1.0E-01 1.0E-02 25°C 13 1.0E-03 1.0E-04 8 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev2: Jul 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3600 10 VDS=50V ID=20A 3200 Ciss 2800 Capacitance (pF) VGS (Volts) 8 6 4 2400 2000 1600 1200 800 2 Coss Crss 400 0 0 0 10 20 30 40 0 50 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 4000 10µs 100µs Power (W) ID (Amps) 100.0 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 100 17 5 2 10 2000 1000 0 0.01 0.1 1 10 VDS (Volts) 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 3000 0.0 Zθ JC Normalized Transient Thermal Resistance 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 5000 1000.0 10.0 20 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1°C/W 40 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev2: Jul 2011 www.aosmd.com Page 4 of 7 AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 100 IAR (A) Peak Avalanche Current TA=25°C 140 Power Dissipation (W) TA=100°C 10 TA=150°C TA=125°C 1 120 100 80 60 40 20 0 0.1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 175 1000 70 60 TA=25°C 50 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 40 30 20 100 17 5 2 10 10 10 0 1 0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 1000 0 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=48°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev2: Jul 2011 www.aosmd.com Page 5 of 7 AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 30 2 125ºC di/dt=800A/µs 125ºC 180 25 40 1.5 30 25ºC 100 20 Qrr 60 Irm (A) 140 trr (ns) Qrr (nC) 20 125ºC 25ºC trr 15 1 10 25ºC S 10 Irm 125ºC 25ºC 20 0 0 5 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 180 15 20 25 30 2 30 40 Is=20A 125ºC 1.5 30 100 80 25ºC Qrr 20 25ºC 20 trr 1 15 25ºC 10 125ºC 60 trr (ns) 25 120 Irm (A) Qrr (nC) 10 35 125ºC 140 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 50 Is=20A 160 0.5 5 S 0.5 10 40 5 Irm 25ºC 125ºC 20 0 0 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev2: Jul 2011 S di/dt=800A/µs S 220 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOT412/AOB412L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev2: Jul 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7