AON6780

AON6780
30V N-Channel MOSFET
SRFET
General Description
Product Summary
SRFETTM AON6780 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load switching
and general purpose applications.
VDS
TM
30V
85A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 1.7mΩ
RDS(ON) (at VGS = 4.5V)
< 2.2mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
TM
1
8
2
7
3
6
4
5
SRFET
Soft Recovery MOSFET:
Integrated Schottky Diode
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
C
Avalanche Current
C
Avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0 : Oct 2010
IAS, IAR
68
A
EAS, EAR
231
mJ
83
Steady-State
Steady-State
W
33
2.5
RθJA
RθJC
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W
1.6
TJ, TSTG
Symbol
t ≤ 10s
A
24
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
30
PD
TC=100°C
A
320
IDSM
TA=70°C
V
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
85
ID
TC=100°C
Pulsed Drain Current
Maximum
30
±12
-55 to 150
Typ
15
42
1.1
°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6780
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
On state drain current
VGS=10V, VDS=5V
320
TJ=125°C
100
2.4
VGS=4.5V, ID=20A
1.7
2.2
VDS=5V, ID=20A
140
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
V
A
2
TJ=125°C
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
nA
2
1.7
gFS
Output Capacitance
1.5
1.4
Static Drain-Source On-Resistance
mA
100
VGS=10V, ID=20A
RDS(ON)
Units
V
0.5
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
0.4
mΩ
mΩ
S
0.7
V
85
A
6300
7950
9600
pF
570
820
1070
pF
360
600
840
pF
0.4
0.8
1.2
Ω
50
63
76
nC
13
17
21
nC
15
25
35
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12
15
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
22
28
34
15
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
ns
9
ns
97
ns
15
ns
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : Oct 2010
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Page 2 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
100
VDS=5V
4.5V
80
3V
80
ID(A)
ID (A)
60
60
VGS=2.5V
40
125°C
40
25°C
20
20
0
0
0
1
2
3
4
0
5
5
2
3
4
Normalized On-Resistance
2
4
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
VGS=4.5V
2
1
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=4.5V 10
1.4
1.2
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
5
ID=20A
1.0E+01
4
125°C
40
3
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
2
25°C
1.0E-01
1.0E-02
1.0E-03
1
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Oct 2010
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
VDS=15V
ID=20A
10000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
8000
6000
4000
2000
0
Crss
0
0
40
80
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
160
0
1000.0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
200
RDS(ON)
limited
10µs
10µs
10.0
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
TJ(Max)=150°C
TC=25°C
160
Power (W)
100.0
ID (Amps)
Coss
17
5
2
10
120
80
1
VDS (Volts)
10
100
40
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18 Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
PD
0.1
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Oct 2010
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Page 4 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=100°C
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
100
TA=150°C
10
TA=125°C
80
60
40
20
1
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
TA=25°C
80
1000
60
Power (W)
Current rating ID(A)
50
10000
100
40
17
5
2
10
100
10
20
1
0.00001
0
0
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
ZθJA Normalized Transient
Thermal Resistance
25
1
25
50
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
150
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
Ton
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Oct 2010
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Page 5 of 7
AON6780
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.7
0.6
1.0E-02
20A
10A
0.5
VDS=15V
1.0E-03
0.4
VSD (V)
IR (A)
VDS=30V
5A
0.3
IS=1A
0.2
1.0E-04
0.1
0
0
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
12
70
di/dt=800A/µs
60
6
Irm
25ºC
15
3.5
3
25ºC
2.5
2
10
4
125ºC
S
5
1.5
1
0.5
25ºC
2
0
5
10
15
20
25
0
30
0
0
IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
50
6
125ºC
Qrr
4
25ºC
20
2
0
0
200
400
600
800
0
1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev0: Oct 2010
5
4
125ºC
20
3
trr
15
25ºC
2
10
Irm
30
Is=20A
25
Irm (A)
40
25
30
8
10
20
125ºC
25ºC
30
15
trr (ns)
Is=20A
10
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
60
5
S
0
Qrr (nC)
4
125ºC
trr (ns)
125ºC
Irm (A)
8
10
4.5
20
trr
40
20
5
25ºC
30
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
di/dt=800A/µs
125ºC
Qrr
50
25
10
50
Qrr (nC)
0
50
S
1.0E-05
125ºC
S
5
1
25ºC
0
0
200
400
600
0
1000
800
di/dt (A/µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AON6780
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0: Oct 2010
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 7 of 7