AOWF412 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOWF412 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V ID (at VGS=10V) 30A RDS(ON) (at VGS=10V) < 15.8mΩ RDS(ON) (at VGS = 7V) < 19.4mΩ 100% UIS Tested 100% Rg Tested TO-262F Top View D Bottom View G S G D S D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev0: August 2010 IAS,IAR 47 A EAS,EAR 110 mJ 33 Steady-State Steady-State W 16 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s A 6 PDSM TA=70°C A 7.8 PD TC=100°C V 20 IDSM TA=70°C ±25 170 IDM TA=25°C Continuous Drain Current Units V 30 ID TC=100°C Maximum 100 -55 to 175 Typ 12 48 3.7 °C Max 15 60 4.5 Units °C/W °C/W °C/W Page 1 of 7 AOWF412 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Conditions Min ID=250µA, VGS=0V 100 Typ 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ,ID=250µA 2.6 ID(ON) On state drain current VGS=10V, VDS=5V 170 VGS=10V, ID=20A TJ=125°C Units V VDS=100V, VGS=0V Zero Gate Voltage Drain Current Max µA 100 nA 3.2 3.8 V 13.2 15.8 25 30 19.4 mΩ S A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 15.5 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current mΩ VGS=7V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1 V 40 A 2150 2680 3220 pF VGS=0V, VDS=50V, f=1MHz 180 260 340 pF 60 100 140 pF VGS=0V, VDS=0V, f=1MHz 0.5 1 1.5 Ω 36 45 54 nC 14 17 20 nC 9 15 21 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=50V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 15 22 29 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 67 96 125 19 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω ns 16 ns 27 ns 10 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: August 2010 www.aosmd.com Page 2 of 7 AOWF412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 VDS=5V 10V 120 80 7V 80 60 6.5V ID(A) ID (A) 100 60 40 6V 40 VGS=5.5V 20 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 17 Normalized On-Resistance 2.6 16 RDS(ON) (mΩ Ω) 25°C 125°C 20 VGS=7V 15 14 VGS=10V 13 12 11 2.4 VGS=10V ID=20A 2.2 2 17 5 2 10 =7V 1.8 1.6 1.4 VGS ID=20A 1.2 1 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 33 1.0E+02 ID=20A 1.0E+01 40 125°C 23 18 25°C 13 125°C 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 28 25°C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 8 5 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: August 2010 6 7 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOWF412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3600 10 VDS=50V ID=20A 3200 Ciss 2800 Capacitance (pF) VGS (Volts) 8 6 4 2400 2000 1600 1200 800 2 Coss Crss 400 0 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 50 1000.0 10µs 10µs RDS(ON) limited 800 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 100µs Power (W) ID (Amps) 100 1000 100.0 10.0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 17 5 2 10 600 400 200 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 Zθ JC Normalized Transient Thermal Resistance 1 0.1 1 010 100 Pulse Width (s)18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.01 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4.5°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: August 2010 www.aosmd.com Page 4 of 7 AOWF412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25°C 35 Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C 10 TA=150°C TA=125°C 1 30 25 20 15 10 5 0 0.1 1 0 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 1000 35 30 TA=25°C 25 Power (W) Current rating ID(A) 175 20 15 10 100 17 5 2 10 10 5 0 1 0 25 50 75 100 125 150 175 0.0001 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.01 1 100 10000 0 Pulse Width (s) 18Junction-toFigure 15: Single Pulse Power Rating Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev0: August 2010 www.aosmd.com Page 5 of 7 AOWF412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 30 2 125ºC di/dt=800A/µs 125ºC di/dt=800A/µs 180 25 40 1.5 30 25ºC 20 Qrr 60 125ºC 25ºC trr 15 1 10 25ºC S 10 Irm 125ºC 25ºC 20 0 0 5 10 15 20 25 0 30 180 15 20 25 125ºC Is=20A 1.5 30 100 80 25ºC Qrr 20 25ºC 20 trr 25ºC S 10 40 Irm 25ºC 125º 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: August 2010 0.5 5 20 0 1 15 10 125ºC 60 trr (ns) 25 120 30 2 30 40 Irm (A) Qrr (nC) 10 35 125ºC 140 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 50 Is=20A 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 160 0.5 5 S 100 trr (ns) 140 Irm (A) Qrr (nC) 20 S 220 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AOWF412 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: August 2010 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7