AOT440 40V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT440 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 40V ID (at VGS=10V) 105A RDS(ON) (at VGS=10V) < 4.7mΩ RDS(ON) (at VGS = 4.5V) <6mΩ 100% UIS Tested 100% Rg Tested TO220 Top View D Bottom View D D G D SD S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2. 0: August 2013 IAS,IAR 40 A EAS,EAR 80 mJ 150 Steady-State Steady-State W 75 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s A 12 PDSM Junction and Storage Temperature Range A 15.5 PD TA=25°C V 82 IDSM TA=70°C ±20 330 IDM TA=25°C Continuous Drain Current Units V 105 ID TC=100°C Maximum 40 -55 to 175 Typ 12 48 0.6 °C Max 15 60 1 Units °C/W °C/W °C/W Page 1 of 7 AOT440 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V Typ Max 40 V VDS=40V, VGS=0V 10 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=5V ,ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 330 VGS=10V, ID=20A 3.9 4.7 6.1 7.3 6 TJ=55°C 50 1.3 1.8 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.8 gFS Forward Transconductance VDS=5V, ID=20A 95 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Units VGS=10V, VDS=20V, ID=20A 0.65 µA ±100 nA 2.3 V A mΩ mΩ S 1 105 V A 3730 4666 5600 pF 520 744 970 pF 160 269 380 pF 0.5 1 1.5 Ω 60 75 90 nC 28 36 45 nC 8.5 10.5 12.5 nC 10 17 25 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 16 19 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 30 38 45 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 15 ns 18 ns 52 ns 23 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2. 0: August 2013 www.aosmd.com Page 2 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 10V VDS=5V 4V 5V 120 120 3.5V 6V 90 ID(A) ID (A) 90 60 60 VGS=3V 30 30 0 0 125°C 25°C 0 1 2 3 4 1 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 7 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 5 Normalized On-Resistance 2 6 RDS(ON) (mΩ Ω) 2 VGS=4.5V 5 4 VGS=10V 3 2 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 8 6 125°C 1.0E-01 1.0E-02 25°C 4 1.0E-03 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2. 0: August 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 VDS=20V ID=20A 6000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 5000 4000 3000 Coss 2000 2 1000 0 Crss 0 0 20 40 60 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 5000 1000.0 TJ(Max)=175°C TC=25°C 10µs 100.0 10µs RDS(ON) 4000 1ms 10.0 DC 1.0 10ms TJ(Max)=175°C Power (W) ID (Amps) 100µs 17 5 2 10 3000 2000 1000 0.1 0 0.0 0.01 0.1 1 10 100 0.00001 0.0001 VDS (Volts) 0.001 0.01 0.1 01 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 RθJC=1°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2. 0: August 2013 www.aosmd.com Page 4 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C 10 TA=125°C 150 120 90 60 30 0 1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 120 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 1000 100 TA=25°C 80 Power (W) Current rating ID(A) 175 60 40 100 17 5 2 10 10 20 0 1 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 175 0.001 Zθ JA Normalized Transient Thermal Resistance 0.1 1 10 0100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.01 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2. 0: August 2013 www.aosmd.com Page 5 of 7 AOT440 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 12 25ºC 25ºC 12 8 30 2 trr 125ºC 1.5 10 S Qrr 40 Irm (A) Qrr (nC) 14 10 50 2.5 125ºC di/dt=800A/µs 16 trr (ns) 60 18 125ºC di/dt=800A/µs 8 Irm 6 S 4 25ºC 10 4 0 5 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 70 15 Is=20A 60 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25 2.5 Is=20A 125ºC 12 20 2 125ºC 50 trr 30 125ºC Qrr 6 15 1.5 25ºC S 9 25ºC trr (ns) 40 Irm (A) Qrr (nC) 0.5 125ºC 2 0 1 25ºC 6 20 10 1 25ºC 20 S 10 3 25ºC Irm 0.5 125ºC 0 0 0 5 200 400 600 800 0 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev.2. 0: August 2013 www.aosmd.com 0 0 200 400 600 800 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt 1000 Page 6 of 7 AOT440 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2. 0: August 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7