AON6774

AON6774
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
85A
ID (at VGS=10V)
Application
RDS(ON) (at VGS=10V)
< 2.05mΩ
RDS(ON) (at VGS=4.5V)
< 3.15mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6774
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.05mH
C
10µs
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: October 2013
IAS
56
A
EAS
78
mJ
VSPIKE
36
V
48
Steady-State
Steady-State
W
19
6.2
RθJA
RθJC
W
4
TJ, TSTG
Symbol
t ≤ 10s
A
35
PDSM
TA=70°C
A
44
PD
TC=100°C
V
260
IDSM
TA=70°C
±20
66
IDM
TA=25°C
Units
V
85
ID
TC=100°C
C
Maximum
30
-55 to 150
Typ
15
40
2
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°C
Max
20
50
2.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=10mA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
0.5
TJ=55°C
1.4
±100
nA
1.8
2.2
V
1.7
2.05
2.4
2.9
3.15
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
2.5
gFS
Forward Transconductance
VDS=5V, ID=20A
105
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.42
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mA
100
VGS=10V, ID=20A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
0.6
V
58
A
3000
pF
1280
pF
160
pF
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
43
60
nC
Qg(4.5V) Total Gate Charge
20.5
30
nC
Qgs
Gate Source Charge
Qgd
f=1MHz
VGS=10V, VDS=15V, ID=20A
1
7.7
nC
Gate Drain Charge
7.5
nC
tD(on)
Turn-On DelayTime
11
ns
6
ns
38.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
10
ns
IF=20A, dI/dt=500A/µs
22
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
42
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS=5V
3.5V
60
60
4.5V
10V
ID(A)
ID (A)
3V
40
40
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
4
3
4
5
6
Normalized On-Resistance
1.6
VGS=4.5V
3
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
2
VGS=10V
1
VGS=10V
ID=20A
1.4
1.2
1
VGS=4.5V
ID=20A
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
6
1.0E+01
ID=20A
1.0E+00
4
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ
Ω)
5
3
2
25°C
1.0E-02
1.0E-03
25°C
1
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2013
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
VDS=15V
ID=20A
4000
Ciss
3500
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2500
2000
Coss
1500
1000
2
Crss
500
0
0
0
10
20
30
40
50
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
500
1000.0
10µs 10µs
100µs
10.0
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
400
Power (W)
RDS(ON)
limited
100.0
ID (Amps)
10
300
200
100
0
0.0
0.01
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.6°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
100
Power Dissipation (W)
50
80
Current rating ID(A)
40
30
20
10
0
60
40
20
0
0
25
50
75
100
125
150
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: October 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6