AON6406 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 170A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 2.3mΩ RDS(ON) (at VGS=4.5V) < 3.5mΩ ESD protected 100% UIS Tested 100% Rg Tested Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C ±20 V A 110 IDM 280 25 IDSM TA=70°C Units V 170 ID TC=100°C Maximum 30 A 19 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C TC=25°C EAS 180 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 1.0: October 2014 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 45 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 110 PD -55 to 150 Typ 14 40 0.85 °C Max 17 55 1.1 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±16V Gate Threshold Voltage VDS=VGS ID=250µA TJ=55°C 5 1.3 10 uA 2.4 V 1.9 2.3 2.8 3.4 3.5 mΩ 1 V 170 A 5200 pF Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.4 gFS Forward Transconductance VDS=5V, ID=20A 130 VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 4300 VGS=0V, VDS=15V, f=1MHz µA 1.8 RDS(ON) TJ=125°C Units V 1 VGS=10V, ID=20A Coss Max mΩ S 720 pF 420 pF 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 70 100 nC Qg(4.5V) Total Gate Charge 33 nC 10 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 1 Qgs Gate Source Charge Qgd Gate Drain Charge 15 nC tD(on) Turn-On DelayTime 10 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/µs Qrr µ Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 15 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 75 ns 18 ns 30 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1.0: October 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 VDS=5V 3.5V 100 4.5V 80 80 3V 10V ID(A) ID (A) 60 60 40 125°C 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 1 5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 2.2 3 RDS(ON) (mΩ) 1.5 VGS=4.5V 2 1 VGS=10V 2 VGS=10V ID=20A 1.8 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 6 1.0E+02 ID=20A 1.0E+01 5 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 4 3 25°C 2 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 1 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1.0: October 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 4000 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics 80 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 900 10µs RDS(ON) limited 800 10µs 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 700 Power (W) 100.0 5 1000 1000.0 ID (Amps) Ciss 600 500 400 300 200 100 0.0 0.01 0.1 1 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.1°C/W PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 T 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1.0: October 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 100 TA=150°C TA=125°C 10 120 100 80 60 40 20 1 0 1 10 100 1000 0 25 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 150 10000 200 180 TA=25°C 160 1000 140 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 120 100 80 60 100 10 40 20 0 0 25 50 75 100 125 150 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1.0: October 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 1.0: October 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6