AOT2142L

AOT2142L
40V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
40V
120A
RDS(ON) (at VGS=10V)
< 1.9mΩ
RDS(ON) (at VGS=4.5V)
< 2.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
TO220
Bottom View
Top View
D
D
G
G
S
D
G
S
D
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT2142L
TO-220
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
C
Avalanche energy
VDS Spike
L=0.3mH
C
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: May 2015
IAS
60
A
EAS
540
mJ
48
V
312
8.3
Steady-State
W
5.3
TJ, TSTG
Symbol
Steady-State
W
156
PDSM
t ≤ 10s
A
40
PD
Junction and Storage Temperature Range
A
50
VSPIKE
TA=25°C
V
480
IDSM
TA=70°C
±20
120
IDM
TA=25°C
Continuous Drain
Current
Units
V
120
ID
TC=100°C
C
Maximum
40
RθJA
RθJC
-55 to 175
Typ
12
50
0.4
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°C
Max
15
60
0.48
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
VGS=0V, VDS=20V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=20A
VDS=5V, ID=20A
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=40V, VGS=0V
IDSS
RDS(ON)
Typ
0.5
±100
nA
1.8
2.3
V
1.55
1.9
2.25
2.8
1.95
2.5
mΩ
1
V
120
A
100
0.66
mΩ
S
8320
pF
1438
pF
85
pF
1.15
1.8
Ω
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
100
nC
Qg(4.5V)
Total Gate Charge
45
nC
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=20V, ID=20A
25
nC
Gate Drain Charge
7
nC
Turn-On DelayTime
19
ns
7
ns
69
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=20V, RL=1.0Ω,
RGEN=3Ω
10
ns
IF=20A, dI/dt=400A/µs
26
Body Diode Reverse Recovery Charge IF=20A, dI/dt=400A/µs
83
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2015
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
3.5V
100
4.5V
80
10V
VDS=5V
100
80
ID(A)
ID (A)
120
60
40
60
125°C
40
25°C
20
20
VGS=3V
0
0
0
1
2
3
4
1
5
1.5
2.5
3
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
4
Normalized On-Resistance
1.8
3
RDS(ON) (mΩ)
2
VGS=4.5V
2
VGS=10V
1
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
1.0E+02
ID=20A
1.0E+01
4
3
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
2
25°C
1.0E-03
25°C
1
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=20V
ID=20A
Ciss
8000
Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
4000
Coss
2000
0
Crss
0
0
20
40
60
80
100
120
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
1000
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
10µs
100µs
800
1ms
10ms
10.0
Power (W)
ID (Amps)
100.0
DC
1.0
0.1
40
TJ(Max)=175°C
TC=25°C
0.0
0.01
600
400
200
0.1
1
10
VDS (Volts)
100
0
0.0001 0.001
1000
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.48°C/W
1
PDM
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2015
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
150
Power Dissipation (W)
300
Current rating ID(A)
250
200
150
100
100
50
50
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PDM
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: May 2015
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6