AON6504 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 85A RDS(ON) (at VGS=10V) < 2.1mΩ RDS(ON) (at VGS = 4.5V) < 3.2mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C C V A 322 51 IDSM TA=70°C ±20 66 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 30 A 41 IAS 60 A Avalanche energy L=0.05mH C EAS 90 mJ VDS Spike VSPIKE 36 V Avalanche Current Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev1: Nov 2012 7.3 Steady-State Steady-State RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1.1 www.aosmd.com °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 5 1.3 VGS=10V, ID=20A 100 nA 2.1 V 1.75 2.1 2.55 3.15 3.2 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 2.4 gFS Forward Transconductance VDS=5V, ID=20A 120 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz µA 1.7 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max mΩ mΩ S 1 V 85 A 2719 pF 1204 pF 169 pF 2.0 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 44 60 nC Qg(4.5V) Total Gate Charge 21 28 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.9 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr µ Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 42.7 nC 9 nC Gate Drain Charge 7 nC Turn-On DelayTime 9.7 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5.2 ns 32.5 ns 10.3 ns 19.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Nov 2012 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 3.5V VDS=5V 80 80 10V 60 ID(A) ID (A) 60 40 40 125°C VGS=3V 20 20 25°C 0 0 0 1 2 3 4 0 5 4 2 3 4 5 6 Normalized On-Resistance 1.6 3 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 2 1 VGS=10V 0 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 3 1.0E-01 125°C 1.0E-02 2 1.0E-03 25°C 1 25°C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev1: Nov 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 Ciss 3000 Capacitance (pF) VGS (Volts) 3500 VDS=15V ID=20A 8 6 4 2500 2000 1500 1000 Coss 2 500 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 500 1000.0 10µs RDS(ON) 100µs 10.0 1ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 400 10µs Power (W) 100.0 ID (Amps) Crss 0 TJ(Max)=150°C TC=25°C 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W PD 0.1 7.3 4.7 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev1: Nov 2012 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 80 Current rating ID(A) 100 90 Power Dissipation (W) 100 70 60 50 40 30 70 60 50 40 30 20 20 10 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev1: Nov 2012 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev1: Nov 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6