AOKS30B60D1

AOKS30B60D1
600V, 30A Alpha IGBT TM
General Description
Product Summary
• Latest Alpha IGBT (α IGBT) technology
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior
• Short-circuit ruggedness
VCE
IC (TC=100°C)
600V
30A
VCE(sat) (TC=25°C)
2.0V
Applications
• Welding Machines
• Motor Drives
• UPS & Solar Inverters
• Very High Switching Frequency Applications
Top View
C
TO-247
G
G
C
E
E
AOKS30B60D1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
V CE
Collector-Emitter Voltage
Gate-Emitter Voltage
VGE Spike
500ns
AOKS30B60D1
600
Units
V
V GE
±20
V
VSPIKE
24
V
Continuous Collector TC=25°C
TC=100°C
Current
IC
Pulsed Collector Current, Limited by TJmax
I CM
96
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
96
A
Short circuit withstanding time VGE = 15V, VCE
t SC
≤ 400V, Delay between short circuits ≥
1.0s, TC=25°C
10
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Rev.1.0: May 2015
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
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60
30
208
83
A
W
-55 to 150
°C
300
°C
AOKS30B60D1
40
0.6
Units
°C/W
°C/W
Page 1 of 7
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
V CE(sat)
V GE(th)
I CES
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Conditions
Min
IC=1mA, VGE=0V, TJ=25°C
VGE=15V, IC=30A
Max
Units
V
600
-
-
TJ=25°C
-
2.0
2.5
TJ=125°C
-
2.4
-
TJ=150°C
-
2.5
-
-
5.6
-
TJ=25°C
-
-
10
TJ=125°C
-
-
400
TJ=150°C
-
-
2000
VCE=5V, IC=1mA
VCE=600V, VGE=0V
Typ
V
V
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±20V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=30A
-
13
-
S
-
1324
-
pF
-
120
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
5
-
pF
Qg
Total Gate Charge
-
34
-
nC
Q ge
Gate to Emitter Charge
-
14.3
-
nC
Q gc
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits ≥ 1.0s
Gate resistance
-
10.7
-
nC
VGE=15V, VCE=400V, RG=25Ω
-
96
-
A
f=1MHz
-
1.3
-
Ω
-
20
-
ns
-
44
-
ns
-
58
-
ns
-
16
-
ns
-
1.1
-
mJ
-
0.24
-
mJ
-
1.34
-
mJ
-
21
-
ns
-
45
-
ns
-
70
-
ns
-
19
-
ns
I C(SC)
Rg
VGE=15V, VCE=480V, IC=30A
SWITCHING PARAMETERS, (Load Iductive, TJ=25°C)
t D(on)
Turn-On DelayTime
tr
Turn-On Rise Time
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E on
Turn-On Energy
E off
Turn-Off Energy
E total
Total Switching Energy
TJ=25°C
VGE=15V, VCE=400V, IC=30A,
RG=10Ω,
Parasitic Ιnductance=150nH
Eon and Etotal include diode
(AOK30B60D1) reverse recovery
SWITCHING PARAMETERS, (Load Iductive, TJ=150°C)
t D(on)
Turn-On DelayTime
tr
Turn-On Rise Time
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E on
Turn-On Energy
E off
Turn-Off Energy
E total
Total Switching Energy
TJ=150°C
VGE=15V, VCE=400V, IC=30A,
RG=10Ω,
Parasitic Inductance=150nH
Eon and Etotal include diode
(AOK30B60D1) reverse recovery
-
1.3
-
mJ
-
0.46
-
mJ
-
1.76
-
mJ
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2015
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Page 2 of 7
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
120
20V
20V
17V
100
17V
120
15V
IC (A)
IC (A)
80
15V
80
13V
60
13V
11V
40
11V
40
9V
VGE= 7V
20
9V
VGE=7V
0
0
0
1
2
3
4
5
6
7
0
1
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
2
3
4
5
6
7
150
175
VCE (V)
Figure 2: Output Characteristic
(Tj=150°C)
100
6
VCE=20V
-40°C
5
80
IC=60A
4
150°C
60
VCE(sat) (V)
IC (A)
25°C
40
IC=30A
3
2
20
1
0
4
7
10
13
IC=15A
0
16
0
25
50
75
100
125
Temperature (°C)
Figure 4: Collector-Emitter Saturation Voltage vs.
Junction Temperature
VGE (V)
Figure 3: Transfer Characteristic
8
VGE(TH) (V)
7
6
5
4
3
2
0
Rev.1.0: May 2015
30
60
90
TJ (°C)
Figure 5: VGE(TH) vs. Tj
120
150
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Page 3 of 7
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VCE=480V
IC=30A
Cies
1000
Capacitance (pF)
VGE (V)
12
9
6
3
Coes
100
Cres
10
1
0
0
5
10
15
20
25
30
0
35
5
10
15
20
25
30
35
40
VCE (V)
Figure 7: Capacitance Characteristic
Qg (nC)
Figure 6: Gate-Charge Characteristics
250
Power Disspation (W)
200
150
100
50
0
25
50
75
100
125
150
TCASE (°C)
Figure 9: Power Disspation as a Function of Case
60
50
Current rating IC (A)
40
30
20
10
0
25
50
75
100
125
150
TCASE (°C)
Figure 10: Current De-rating
Rev.1.0: May 2015
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Page 4 of 7
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10,000
Td(off)
Td(off)
Tf
Tf
100
Td(on)
1,000
Switching Time (ns)
Switching Time (ns)
Td(on)
Tr
10
Tr
100
10
1
1
0
10
20
30
40
50
60
IC (A)
Figure 11: Switching Time vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=10Ω)
70
0
30
60
90
Rg (Ω)
Figure 12: Switching Time vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=30A)
120
1000
Td(off)
Tf
Switching Time (ns)
Td(on)
100
Tr
10
1
0
100
150
TJ (°C)
Figure 13: Switching Time vs.Tj
( VGE=15V, VCE=400V, IC=30A, Rg=10Ω)
Rev.1.0: May 2015
50
200
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Page 5 of 7
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
3.0
Eoff
Eoff
6
Eon
2.5
Etotal
Switching Energy (mJ)
SwitchIng Energy (mJ)
Eon
4
2
Etotal
2.0
1.5
1.0
0.5
0
0.0
0
10
20
30
40
50
60
70
0
IC (A)
Figure 14: Switching Loss vs. IC
(Tj=150°C, VGE=15V, VCE=400V, Rg=10Ω)
30
2.5
90
120
2.5
Eoff
Eoff
Eon
2
Switching Energy (mJ)
1.5
1
0.5
0
0
25
Eon
2.0
Etotal
Switching Energy (mJ)
60
Rg (Ω)
Figure 15: Switching Loss vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, IC=30A)
50
75
100
125
150
TJ (°C)
Figure 16: Switching Loss vs. Tj
(VGE=15V, VCE=400V, IC=30A, Rg=10Ω)
175
Etotal
1.5
1.0
0.5
0.0
200
250
300
350
400
450
VCE (V)
Figure 17: Switching Loss vs. VCE
(Tj=150°C, VGE=15V, IC=30A, Rg=10Ω)
500
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
Rev.1.0: May 2015
1E-05
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for IGBT
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1
10
Page 6 of 7
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: May 2015
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Page 7 of 7