AOKS30B60D1 600V, 30A Alpha IGBT TM General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness VCE IC (TC=100°C) 600V 30A VCE(sat) (TC=25°C) 2.0V Applications • Welding Machines • Motor Drives • UPS & Solar Inverters • Very High Switching Frequency Applications Top View C TO-247 G G C E E AOKS30B60D1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter V CE Collector-Emitter Voltage Gate-Emitter Voltage VGE Spike 500ns AOKS30B60D1 600 Units V V GE ±20 V VSPIKE 24 V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 96 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 96 A Short circuit withstanding time VGE = 15V, VCE t SC ≤ 400V, Delay between short circuits ≥ 1.0s, TC=25°C 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Rev.1.0: May 2015 PD T J , T STG TL Symbol R θ JA R θ JC www.aosmd.com 60 30 208 83 A W -55 to 150 °C 300 °C AOKS30B60D1 40 0.6 Units °C/W °C/W Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) V GE(th) I CES Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Zero Gate Voltage Collector Current Conditions Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=30A Max Units V 600 - - TJ=25°C - 2.0 2.5 TJ=125°C - 2.4 - TJ=150°C - 2.5 - - 5.6 - TJ=25°C - - 10 TJ=125°C - - 400 TJ=150°C - - 2000 VCE=5V, IC=1mA VCE=600V, VGE=0V Typ V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=30A - 13 - S - 1324 - pF - 120 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 5 - pF Qg Total Gate Charge - 34 - nC Q ge Gate to Emitter Charge - 14.3 - nC Q gc Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between short circuits ≥ 1.0s Gate resistance - 10.7 - nC VGE=15V, VCE=400V, RG=25Ω - 96 - A f=1MHz - 1.3 - Ω - 20 - ns - 44 - ns - 58 - ns - 16 - ns - 1.1 - mJ - 0.24 - mJ - 1.34 - mJ - 21 - ns - 45 - ns - 70 - ns - 19 - ns I C(SC) Rg VGE=15V, VCE=480V, IC=30A SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) t D(on) Turn-On DelayTime tr Turn-On Rise Time t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy E off Turn-Off Energy E total Total Switching Energy TJ=25°C VGE=15V, VCE=400V, IC=30A, RG=10Ω, Parasitic Ιnductance=150nH Eon and Etotal include diode (AOK30B60D1) reverse recovery SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) t D(on) Turn-On DelayTime tr Turn-On Rise Time t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy E off Turn-Off Energy E total Total Switching Energy TJ=150°C VGE=15V, VCE=400V, IC=30A, RG=10Ω, Parasitic Inductance=150nH Eon and Etotal include diode (AOK30B60D1) reverse recovery - 1.3 - mJ - 0.46 - mJ - 1.76 - mJ THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2015 www.aosmd.com Page 2 of 7 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 120 20V 20V 17V 100 17V 120 15V IC (A) IC (A) 80 15V 80 13V 60 13V 11V 40 11V 40 9V VGE= 7V 20 9V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 1 VCE (V) Figure 1: Output Characteristic (Tj=25°C) 2 3 4 5 6 7 150 175 VCE (V) Figure 2: Output Characteristic (Tj=150°C) 100 6 VCE=20V -40°C 5 80 IC=60A 4 150°C 60 VCE(sat) (V) IC (A) 25°C 40 IC=30A 3 2 20 1 0 4 7 10 13 IC=15A 0 16 0 25 50 75 100 125 Temperature (°C) Figure 4: Collector-Emitter Saturation Voltage vs. Junction Temperature VGE (V) Figure 3: Transfer Characteristic 8 VGE(TH) (V) 7 6 5 4 3 2 0 Rev.1.0: May 2015 30 60 90 TJ (°C) Figure 5: VGE(TH) vs. Tj 120 150 www.aosmd.com Page 3 of 7 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VCE=480V IC=30A Cies 1000 Capacitance (pF) VGE (V) 12 9 6 3 Coes 100 Cres 10 1 0 0 5 10 15 20 25 30 0 35 5 10 15 20 25 30 35 40 VCE (V) Figure 7: Capacitance Characteristic Qg (nC) Figure 6: Gate-Charge Characteristics 250 Power Disspation (W) 200 150 100 50 0 25 50 75 100 125 150 TCASE (°C) Figure 9: Power Disspation as a Function of Case 60 50 Current rating IC (A) 40 30 20 10 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating Rev.1.0: May 2015 www.aosmd.com Page 4 of 7 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10,000 Td(off) Td(off) Tf Tf 100 Td(on) 1,000 Switching Time (ns) Switching Time (ns) Td(on) Tr 10 Tr 100 10 1 1 0 10 20 30 40 50 60 IC (A) Figure 11: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=10Ω) 70 0 30 60 90 Rg (Ω) Figure 12: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=30A) 120 1000 Td(off) Tf Switching Time (ns) Td(on) 100 Tr 10 1 0 100 150 TJ (°C) Figure 13: Switching Time vs.Tj ( VGE=15V, VCE=400V, IC=30A, Rg=10Ω) Rev.1.0: May 2015 50 200 www.aosmd.com Page 5 of 7 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 3.0 Eoff Eoff 6 Eon 2.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eon 4 2 Etotal 2.0 1.5 1.0 0.5 0 0.0 0 10 20 30 40 50 60 70 0 IC (A) Figure 14: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=10Ω) 30 2.5 90 120 2.5 Eoff Eoff Eon 2 Switching Energy (mJ) 1.5 1 0.5 0 0 25 Eon 2.0 Etotal Switching Energy (mJ) 60 Rg (Ω) Figure 15: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=30A) 50 75 100 125 150 TJ (°C) Figure 16: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=30A, Rg=10Ω) 175 Etotal 1.5 1.0 0.5 0.0 200 250 300 350 400 450 VCE (V) Figure 17: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=30A, Rg=10Ω) 500 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 Rev.1.0: May 2015 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for IGBT www.aosmd.com 1 10 Page 6 of 7 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: May 2015 www.aosmd.com Page 7 of 7