AOK20B120E2

AOK20B120E2
1200V, 20A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest Alpha IGBT (α IGBT) technology
• Best in Class VCE(sat) enables high efficiencies
• Low turn-off switching loss due to fast turn-off time
• Very smooth turn-off current waveforms reduce EMI
• Better thermal management
• High surge current capability
• Minimal gate spike due to high input capacitance
VCE
IC (TC=100°C)
1200V
20A
VCE(sat) (TC=25°C)
1.75V
Applications
• Induction Cooking
• Rice Cookers
• Microwave Ovens
• Other soft switching applications
Top View
C
TO-247
G
AOK20B120E2
C
G
Orderable Part Number
E
E
Package Type
AOK20B120E2
TO247
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
V CE
Collector-Emitter Voltage
Form
Minimum Order Quantity
Tube
240
AOK20B120E2
1200
Units
V
±30
40
V
Gate-Emitter Voltage
V GE
Continuous Collector TC=25°C
TC=100°C
Current
IC
Pulsed Collector Current, Limited by TJmax
I Cpulse
80
Non repetitive peak collector currentA
I CSM
200
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
80
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
20
40
IF
20
I Fpulse
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
80
250
125
A
A
A
A
W
-55 to 175
°C
300
°C
AOK20B120E2
40
0.6
Units
°C/W
°C/W
1.6
°C/W
Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs
Rev.1.0: April 2015
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Page 1 of 8
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
1200
-
-
V
TJ=25°C
-
1.75
2.2
V CE(sat)
VGE=15V, IC=20A
TJ=125°C
-
2.2
-
TJ=175°C
-
2.3
-
TJ=25°C
-
1.6
2
TJ=125°C
-
2.3
TJ=175°C
-
2.4
-
4.4
5.05
5.7
TJ=25°C
-
-
10
TJ=125°C
-
-
500
TJ=175°C
-
-
5000
VF
Parameter
Collector-Emitter Saturation Voltage
Diode Forward Voltage
VGE=0V, IC=20A
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=1200V, VGE=0V
V
V
V
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=20A
-
22.5
-
S
-
1445
-
pF
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
-
85
-
C res
Reverse Transfer Capacitance
-
25
-
pF
Qg
Total Gate Charge
-
53.5
-
nC
Q ge
Gate to Emitter Charge
-
12
-
nC
Q gc
Gate to Collector Charge
-
24.5
-
nC
Rg
Gate resistance
-
2.2
-
Ω
-
123
-
ns
-
120
-
ns
-
0.82
-
mJ
-
144
-
ns
-
170
-
ns
-
1.32
-
mJ
VGE=15V, VCE=960V, IC=20A
VGE=0V, VCE=0V, f=1MHz
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E off
Turn-Off Energy
TJ=25°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
t D(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
E off
Turn-Off Energy
TJ=175°C
VGE=15V, VCE=600V, IC=20A,
RG=15Ω,
Parasitic Inductance=150nH
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2015
www.aosmd.com
Page 2 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
180
150
20V
20V
90
17V
IC (A)
IC (A)
120
13V
90
17V
60
15V
15V
60
11V
13V
11V
9V
30
30
9V
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
VCE (V)
Figure 2: Output Characteristic
(Tj=175°C)
VCE (V)
Figure 1: Output Characteristic
(Tj=25°C)
100
60
VCE=20V
50
-40°C
80
60
25°C
IF (A)
IC (A)
40
30
175°C
40
25°C
20
175°C
20
10
-40°C
0
0
4
7
10
13
0.5
5
7
4
6
IC=40A
3
1.5
2.0
2.5
3.0
3.5
4.0
VF (V)
Figure 4: Diode Characteristic
VGE(TH)(V)
VCE(sat) (V)
VGE (V)
Figure 3: Transfer Characteristic
1.0
IC=20A
5
4
2
IC=10A
1
3
0
2
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2015
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0
25
50
75
100
125
150
175
TJ (°C)
Figure 6: VGE(TH) vs. Tj
Page 3 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=960V
IC=20A
Cies
1000
9
Capacitance (pF)
VGE(V)
12
6
3
Coes
100
0
10
Cres
1
0
10
20
30
40
50
60
70
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
35
40
VCE (V)
Figure 8: Capacitance Characteristic
350
300
Power Disspation (W)
250
200
150
100
50
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 10: Power Disspation as a Function of Case
60
50
Current rating IC(A)
40
30
20
10
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 11: Current De-rating
Rev.1.0: April 2015
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Page 4 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
10000
Td(off)
Td(off)
Tf
Tf
1000
Switching Time (ns)
Switching Time (ns)
1000
100
10
100
10
1
1
0
10
20
30
IC (A)
Figure 12: Switching Time vs. IC
(Tj=175°C, VGE=15V, VCE=600V, Rg=15Ω)
40
0
25
50
75
100
125
150
Rg (Ω)
Figure 13: Switching Time vs. Rg
(Tj=175°C, VGE=15V, VCE=600V, IC=20A)
175
10000
Td(off)
Tf
Switching Time (ns)
1000
100
10
1
0
100
150
TJ (°C)
Figure 14: Switching Time vs.Tj
( VGE=15V, VCE=600V, IC=20A, Rg=15Ω)
Rev.1.0: April 2015
50
200
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Page 5 of 8
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
4
Eoff
Switching Energy (mJ)
SwitchIng Energy (mJ)
Eoff
2
1
0
3
2
1
0
0
10
20
30
40
0
IC (A)
Figure 15: Switching Loss vs. IC
(Tj=175°C, VGE=15V, VCE=600V, Rg=15Ω)
25
75
100
125
Rg (Ω)
Figure 16: Switching Loss vs. Rg
(Tj=175°C, VGE=15V, VCE=600V, IC=20A)
4
4
Eoff
Eoff
3
3
Switching Energ y (mJ)
Switching Energy (mJ)
50
2
1
0
2
1
0
0
25
50
75
100
125
150
175
200
TJ (°C)
Figure 17: Switching Loss vs. Tj
(VGE=15V, VCE=600V, IC=20A, Rg=15Ω)
Rev.1.0: April 2015
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100
200
300
400
500
600
700
VCE (V)
Figure 18: Switching Loss vs. VCE
(Tj=175°C, VGE=15V, IC=20A, Rg=15Ω)
Page 6 of 8
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
1.E-02
40A
1.E-03
2.4
VCE=1200V
VSD (V)
ICE(S) (A)
1.E-04
1.E-05
20A
1.8
5A
1.2
1.E-06
VCE=960V
0.6
1.E-07
0
1.E-08
0
50
100
150
200
ZθJC Normalized Transient
Thermal Resistance
1
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 20: Diode Forward voltage vs. Junction
Temperature
Temperature (°C)
Figure 19: Diode Reverse Leakage Current vs.
Junction Temperature
10
IF=1A
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2015
www.aosmd.com
Page 7 of 8
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: April 2015
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Page 8 of 8