AOK20B120E2 1200V, 20A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • Best in Class VCE(sat) enables high efficiencies • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance VCE IC (TC=100°C) 1200V 20A VCE(sat) (TC=25°C) 1.75V Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View C TO-247 G AOK20B120E2 C G Orderable Part Number E E Package Type AOK20B120E2 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol V CE Collector-Emitter Voltage Form Minimum Order Quantity Tube 240 AOK20B120E2 1200 Units V ±30 40 V Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I Cpulse 80 Non repetitive peak collector currentA I CSM 200 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 80 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case 20 40 IF 20 I Fpulse PD T J , T STG TL Symbol R θ JA R θ JC R θ JC 80 250 125 A A A A W -55 to 175 °C 300 °C AOK20B120E2 40 0.6 Units °C/W °C/W 1.6 °C/W Note A: Capacitor charging saturation current limited by Tjmax<175°C and tp<3µs Rev.1.0: April 2015 www.aosmd.com Page 1 of 8 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 1200 - - V TJ=25°C - 1.75 2.2 V CE(sat) VGE=15V, IC=20A TJ=125°C - 2.2 - TJ=175°C - 2.3 - TJ=25°C - 1.6 2 TJ=125°C - 2.3 TJ=175°C - 2.4 - 4.4 5.05 5.7 TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 5000 VF Parameter Collector-Emitter Saturation Voltage Diode Forward Voltage VGE=0V, IC=20A V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=1200V, VGE=0V V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=20A - 22.5 - S - 1445 - pF pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance - 85 - C res Reverse Transfer Capacitance - 25 - pF Qg Total Gate Charge - 53.5 - nC Q ge Gate to Emitter Charge - 12 - nC Q gc Gate to Collector Charge - 24.5 - nC Rg Gate resistance - 2.2 - Ω - 123 - ns - 120 - ns - 0.82 - mJ - 144 - ns - 170 - ns - 1.32 - mJ VGE=15V, VCE=960V, IC=20A VGE=0V, VCE=0V, f=1MHz SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy TJ=25°C VGE=15V, VCE=600V, IC=20A, RG=15Ω, Parasitic Inductance=150nH SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E off Turn-Off Energy TJ=175°C VGE=15V, VCE=600V, IC=20A, RG=15Ω, Parasitic Inductance=150nH THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 180 150 20V 20V 90 17V IC (A) IC (A) 120 13V 90 17V 60 15V 15V 60 11V 13V 11V 9V 30 30 9V VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 100 60 VCE=20V 50 -40°C 80 60 25°C IF (A) IC (A) 40 30 175°C 40 25°C 20 175°C 20 10 -40°C 0 0 4 7 10 13 0.5 5 7 4 6 IC=40A 3 1.5 2.0 2.5 3.0 3.5 4.0 VF (V) Figure 4: Diode Characteristic VGE(TH)(V) VCE(sat) (V) VGE (V) Figure 3: Transfer Characteristic 1.0 IC=20A 5 4 2 IC=10A 1 3 0 2 0 25 50 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 www.aosmd.com 0 25 50 75 100 125 150 175 TJ (°C) Figure 6: VGE(TH) vs. Tj Page 3 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=960V IC=20A Cies 1000 9 Capacitance (pF) VGE(V) 12 6 3 Coes 100 0 10 Cres 1 0 10 20 30 40 50 60 70 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE (V) Figure 8: Capacitance Characteristic 350 300 Power Disspation (W) 250 200 150 100 50 0 25 50 75 100 125 150 175 TCASE (°C) Figure 10: Power Disspation as a Function of Case 60 50 Current rating IC(A) 40 30 20 10 0 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.1.0: April 2015 www.aosmd.com Page 4 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10000 Td(off) Td(off) Tf Tf 1000 Switching Time (ns) Switching Time (ns) 1000 100 10 100 10 1 1 0 10 20 30 IC (A) Figure 12: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=600V, Rg=15Ω) 40 0 25 50 75 100 125 150 Rg (Ω) Figure 13: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=600V, IC=20A) 175 10000 Td(off) Tf Switching Time (ns) 1000 100 10 1 0 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V, VCE=600V, IC=20A, Rg=15Ω) Rev.1.0: April 2015 50 200 www.aosmd.com Page 5 of 8 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 4 Eoff Switching Energy (mJ) SwitchIng Energy (mJ) Eoff 2 1 0 3 2 1 0 0 10 20 30 40 0 IC (A) Figure 15: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=600V, Rg=15Ω) 25 75 100 125 Rg (Ω) Figure 16: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=600V, IC=20A) 4 4 Eoff Eoff 3 3 Switching Energ y (mJ) Switching Energy (mJ) 50 2 1 0 2 1 0 0 25 50 75 100 125 150 175 200 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V, VCE=600V, IC=20A, Rg=15Ω) Rev.1.0: April 2015 www.aosmd.com 100 200 300 400 500 600 700 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=20A, Rg=15Ω) Page 6 of 8 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 1.E-02 40A 1.E-03 2.4 VCE=1200V VSD (V) ICE(S) (A) 1.E-04 1.E-05 20A 1.8 5A 1.2 1.E-06 VCE=960V 0.6 1.E-07 0 1.E-08 0 50 100 150 200 ZθJC Normalized Transient Thermal Resistance 1 0 25 50 75 100 125 150 175 Temperature (°C) Figure 20: Diode Forward voltage vs. Junction Temperature Temperature (°C) Figure 19: Diode Reverse Leakage Current vs. Junction Temperature 10 IF=1A D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 21: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 7 of 8 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: April 2015 www.aosmd.com Page 8 of 8