AON7414

AON7414
30V N-Channel MOSFET
General Description
Product Summary
The AON7414 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
20A
RDS(ON) (at VGS=10V)
< 15mΩ
RDS(ON) (at VGS=4.5V)
< 20mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3A
Top View
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
G
C
V
A
55
12.5
IDSM
TA=70°C
±20
15
IDM
TA=25°C
Units
V
20
ID
TC=100°C
Maximum
30
A
10
Avalanche Current C
IAS
17
A
Avalanche energy L=0.1mH C
EAS
14
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: September 2013
4.1
Steady-State
Steady-State
RθJA
RθJC
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W
2.6
TJ, TSTG
Symbol
t ≤ 10s
W
6
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
15.5
-55 to 150
Typ
24
47
6.6
°C
Max
30
60
8
Units
°C/W
°C/W
°C/W
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AON7414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
VGS=4.5V, ID=7A
gFS
Forward Transconductance
VDS=5V, ID=8A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=8A
µA
5
1.4
1.5
Units
V
1
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
1.8
±100
nA
2.2
V
12.3
15
19.5
24
15.8
20
mΩ
1
V
18
A
33
0.72
mΩ
S
595
pF
98
pF
70
pF
3
4.5
Ω
13.6
22
nC
6.8
12
nC
1.6
nC
Gate Drain Charge
3.6
nC
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3.5
ns
22
ns
tf
Turn-Off Fall Time
4.5
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=8A, dI/dt=500A/µs
9
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
15
ns
nC
VGS=10V, VDS=15V, RL=1.87Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
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Page 2 of 6
AON7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS=5V
4V
40
40
4.5V
30
30
ID(A)
ID (A)
3.5V
20
20
125°C
VGS=3V
10
10
25°C
0
0
0
1
2
3
4
0
5
25
2
3
4
5
6
Normalized On-Resistance
1.8
20
VGS=4.5V
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
15
10
VGS=10V
5
1.6
VGS=10V
ID=8A
1.4
1.2
VGS=4.5V
ID=7A
1
17
5
2
10
0.8
0
0
4
0
8
12
16
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
40
1.0E+01
ID=8A
1.0E+00
40
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ
Ω)
30
20
125°C
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: September 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=15V
ID=8A
800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
2
200
0
0
Coss
Crss
0
3
6
9
12
15
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
TJ(Max)=150°C
TC=25°C
10µs
160
100µs
Power (W)
ID (Amps)
10µs
RDS(ON)
limited
DC
1ms
1.0
0.1
30
200
100.0
10.0
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10ms
TJ(Max)=150°C
TC=25°C
0.0
0.01
17
5
2
10
120
80
40
0.1
1
10
100
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
(Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=8°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
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Page 4 of 6
AON7414
20
24
15
18
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5
12
0
6
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
17
5
2
10
100
10
1
1E-05
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.001
0.1
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0
18
10
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
40
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: September 2013
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Page 5 of 6
AON7414
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: September 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6