DG3001/3002/3003 Vishay Siliconix New Product Low-Voltage Sub-Ohm SPST/SPDT MICRO FOOTr Analog Switch FEATURES BENEFITS D MICRO FOOT Chip Scale Package (1.0 x 1.5 mm) D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 0.4 W D Fast Switching - tON : 47 ns, tOFF: 40 ns D Low Power Consumption D TTL/CMOS Compatible D D D D APPLICATIONS Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space D D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems PCM Cards PDA DESCRIPTION The DG3001/DG3002/DG3003 are monolithic CMOS analog switches designed for high performance switching of analog signals. The DG3001 and DG3002 are configured as SPST switches, and the DG3003 is an SPDT switch. Combining low power, high speed (tON: 47 ns, tOFF: 40 ns), low on-resistance (rDS(on): 0.4 W) and small physical size (MICRO FOOT, 6-bump), the DG3001/DG3002/DG3003 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG3001/DG3002/DG3003 are built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION MICRO FOOT (6-Bump) MICRO FOOT (6-Bump) DG3001DB MICRO FOOT (6-Bump) DG3002DB DG3003DB V+ B1 A1 NO (Source1) V+ B1 A1 NC (Source1) V+ B1 A1 NO (Source1) IN B2 A2 COM IN B2 A2 COM IN B2 A2 COM B3 A3 COM GND B3 A3 COM GND B3 A3 GND NC (Source2) A1 Locator Device Marking: 3003 xxx = Date/Lot Traceability Code ORDERING INFORMATION NC NO 0 ON OFF 1 OFF ON Document Number: 72505 S-32069—Rev. A, 27-Oct-03 A1 Locator Device Marking: 3002 xxx = Date/Lot Traceability Code TRUTH TABLE XXX 3003 XXX 3002 XXX 3001 A1 Locator Device Marking: 3001 xxx = Date/Lot Traceability Code Logic Top View Top View Top View Temp Range Package -40 to 85°C MICRO FOOT: 6-Bump (3 2, 0.5-mm pitch, 165 mm nom. 165-mm nom bump height) Part Number DG3001DB DG3002DB DG3003DB www.vishay.com 1 DG3001/3002/3003 Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . . "250 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "400 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Reflow Conditionsb VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215°C IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C Power Dissipation (Packages)c 6-Bump, 2 x 3 MICRO FOOTd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020A) c All bumps soldered to PC Board. d Derate 3.1 mW/_C above 70_C SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Limits −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistanced rON rON Flatness rON Flatnessd rON Matchd Switch Off Leakage VNO, VNC, VCOM Current f V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room Full 0.4 0.7 0.8 Room 0.1 0.2 0.01 0.05 DrON Room INO(off), INC(off) Room Full 1 −10 1 10 Room Full 1 −10 1 10 Room Full 1 −10 1 10 2 ICOM(off) Channel-On Leakage Currentf V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA ICOM(on) V+ = 3.3 V VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V W nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Input Currentd Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 5 −1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 2 2.0 0V V, RL = 300 W W, CL = 35 pF Figure 1 and 2 CNO(off), CNC(off) Room Full 47 71 Room Full 40 59 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W, W CL = 5 pF, pF f = 100 kHz VIN = 0 or V+, f = 1 MHz CON 1 ns 6 Room 64 Room −70 Room −70 Room 100 Room 340 pC dB pF Power Supply Power Supply Range V+ Power Supply Currentd I+ 2.7 VIN = 0 or V+ 0.1 3.3 V 1.0 mA Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. www.vishay.com 2 Document Number: 72505 S-32069—Rev. A, 27-Oct-03 DG3001/3002/3003 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Single Supply Voltage 2.00 r ON − On-Resistance ( W ) r ON − On-Resistance ( W ) V+ = 3 V IS = 10 mA T = 25 _C IS = 10 mA 1.75 1.50 1.25 V+ = 1.8 V 1.00 V+ = 2 V 0.75 V+ = 2.7 V V+ = 3 V 0.50 V+ = 5 V 0.25 rON vs. Analog Voltage and Temperature 1.00 0.80 85_C 0.60 25_C 0.40 −40_C 0.20 V+ = 3.3 V 0.00 0.0 0.00 0 1 2 3 4 5 0.5 1.0 VCOM − Analog Voltage (V) 2.0 2.5 3.0 VCOM − Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 100 mA 10000 10 mA 1000 V+ = 5 V VIN = 0 V I+ − Supply Current (A) I+ − Supply Current (nA) 1.5 100 10 V+ = 5 V 1 mA 100 mA 10 mA 1 mA 100 nA 10 nA 1 −60 1 nA −40 −20 0 20 40 60 80 100 10 100 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (_C) Leakage Current vs. Temperature Leakage vs. Analog Voltage 1000 250 V+ = 5 V 200 ICOM(on) V+ = 5 V 150 Leakage Current (pA) Leakage Current (pA) 1K 100 ICOM(off) INO(off), INC(off) ICOM(off) 100 50 ICOM(on) 0 INO(off), INC(off) −50 −100 −150 −200 10 −60 −40 −20 0 20 40 Temperature (_C) Document Number: 72505 S-32069—Rev. A, 27-Oct-03 60 80 100 −250 0 1 2 3 4 5 VCOM, VNO, VNC − Analog Voltage (V) www.vishay.com 3 DG3001/3002/3003 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 10 90 0 80 tON V+ = 2 V 70 tOFF V+ = 2 V 60 tON V+ = 3 V 50 40 tOFF V+ = 3 V 30 Loss, OIRR, XTALK (dB) t ON, t OFF − Switching Time (ns) Switching Time vs. Temperature and Supply Voltage 100 −20 −50 −80 0 20 40 60 80 V+ = 3 V RL = 50 W −60 10 −20 OIRR −40 −70 −40 XTALK −30 20 0 −60 LOSS −10 −90 100 K 100 1M 10 M 100 M 1G Frequency (Hz) Temperature (_C) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage 3.0 250 Q − Charge Injection (pC) V T − Switching Threshold (V) 200 2.5 2.0 1.5 1.0 150 V+ = 5 V 100 50 0 −50 V+ = 3 V V+ = 2 V −100 −150 0.5 −200 0.0 −250 0 1 2 3 4 V+ − Supply Voltage (V) www.vishay.com 4 5 6 7 0 1 2 3 4 5 VCOM − Analog Voltage (v) Document Number: 72505 S-32069—Rev. A, 27-Oct-03 DG3001/3002/3003 Vishay Siliconix New Product TEST CIRCUITS V+ VINH Logic Input V+ Switch Input VINL Switch Output COM NO or NC VOUT RL 300 W GND 0.9 x VOUT Switch Output IN Logic Input tr t 5 ns tf t 5 ns 50% CL 35 pF 0V tOFF tON Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT + V COM ǒ RL R L ) R ON Ǔ FIGURE 1. Switching Time V+ Logic Input V+ COM NO VNO VINH tr <5 ns tf <5 ns VINL VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen + Vgen V+ COM NC or NO IN VOUT DVOUT VOUT CL = 1 nF IN On Off On GND Q = DVOUT x CL VIN = 0 − V+ IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 72505 S-32069—Rev. A, 27-Oct-03 www.vishay.com 5 DG3001/3002/3003 Vishay Siliconix New Product TEST CIRCUITS V+ 10 nF V+ NC or NO 0V, 2.4 V IN COM RL V COM Off Isolation + 20 log V NOńNC GND Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter 0 V, 2.4 V IN NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 6 Document Number: 72505 S-32069—Rev. A, 27-Oct-03 DG3001/3002/3003 Vishay Siliconix New Product PACKAGE OUTLINE MICRO FOOT: 6-BUMP (3 X 2, 0.5-mm PITCH, 165-mm BUMP HEIGHT) 6 O 0.150 X 0.180 Note 2 Solder Mask O X Pad Dia. + 0.1 0.5 Silicon 0.5 A2 A A1 Recommended Land Pattern Bump Note 1 Index-Bump A1 Note 3 3 2 1 b Diameter A XXX 3003 E e B S S Top Side (Die Back) e D NOTES (Unless Otherwise Specified): 1. Bump is Eutectic 63/57 Sn/Pb. 2. Non-solder mask defined copper landing pad. 3. Laser Mark on silicon die back; no coating. Shown is not actual marking; sample only. MILLIMETERS* INCHES Dim Min Max Min Max A 0.610 0.685 0.0240 0.0270 A1 0.140 0.190 0.0055 0.0075 A2 0.470 0.495 0.0185 0.0195 b 0.180 0.250 0.0071 0.0098 D 1.490 1.515 0.0587 0.0596 E 0.990 1.015 0.0390 0.0400 e S 0.5 BASIC 0.245 0.0197 BASIC 0.258 0.0096 0.0101 * Use millimeters as the primary measurement. Document Number: 72505 S-32069—Rev. A, 27-Oct-03 www.vishay.com 7