VISHAY DG2031

DG2031
Vishay Siliconix
Low-Voltage, Sub 1-W, Dual SPDT Analog Switch
FEATURES
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BENEFITS
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rON: 0.45 W
−71 dB OIRR @ 2.7 V, 100 kHz
ESD Protection >2000 V
MSOP-10 Package
Available in Lead (Pb)-Free
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APPLICATIONS
Reduced Power Consumption
High Accuracy
Reduce Board Space
1.6-V Logic Compatible
High Bandwidth
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Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
Relay Replacement
DESCRIPTION
The DG2031 is a sub 1-W (0.75 W @ 2.7 V ) dual SPDT analog
switch designed for low voltage applications.
The DG2031 has on-resistance matching (less than 0.05 W @
2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are
guaranteed over the entire voltage range. Additionally, low
logic thresholds makes the DG2031 an ideal interface to low
voltage DSP control signals.
The DG2031 has fast switching speed (on/off time @ 34 and
24 ns) with break-before-make guaranteed. In the On
condition, all switching elements conduct equally in both
directions. Off-isolation and crosstalk is −71 dB @ 100 kHz.
The DG2031 is built on Vishay Siliconix’s high-density low
voltage CMOS process. An eptiaxial layer is built in to prevent
latchup. The DG2031 contains the additional benefit of
2,000-V ESD protection.
Packaged in space saving MSOP-10, the DG2031 is a high
performance, low rON switch for battery powered applications.
The DG2031 is available in both standard and lead (Pb)-free
packaging. No lead is used in the manufacturing process, for
the lead (Pb)-free version, either inside the device/package or
on external terminations.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MSOP-10
V+
1
10
NO2
NO1
2
9
COM2
COM1
3
8
IN2
IN1
4
7
NC2
NC1
5
6
GND
TRUTH TABLE
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Top View
Document Number: 71966
S-41158—Rev. E, 21-Jun-04
Temp Range
Package
-40 to 85°C
MSOP-10
(with Tape and Reel)
Standard
Part Number
Lead (Pb)-Free
Part Number
DG2031DQ-T1
DG2031DQ-T1—E3
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DG2031
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . "300 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
ESD per Method 3015.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2 kV
Power Dissipation (Packages)b
MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Limits
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
−40 to 85_C
Tempa
Minb
VNO, VNC,
VCOM
Full
0
On-Resistance
rON
Room
Full
0.50
0.75
0.8
rON Flatnessd
rON
Flatness
Room
0.12
0.2
On-Resistance
Match Between Channelsd
DrDS(on)
Parameter
Symbol
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
Switch Off Leakage Current
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 2.7
2 7 V,
V VCOM = 0.6/1.5
0 6/1 5 V
INO, INC = 100 mA
Room
V+ = 3.3 V, VNO, VNC = 0.3 V/3 V
VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
W
0.05
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
1.6
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Input Current
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
9
1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2.0
2 0 V,
V RL = 50 W,
W CL = 35 pF
Turn-Off Time
Break-Before-Make Time
tOFF
Room
Full
34
58
59
Room
Full
24
49
50
td
VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF
Full
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 1.5 V, RGEN = 0 W
Room
4
Off-Isolationd
OIRR
Room
−71
Crosstalkd
XTALK
Room
−71
CNO(off)
Room
117
CNC(off)
Room
115
Room
367
Room
368
NO, NC Off Capacitanced
Channel-On Capacitanced
CNO(on)
RL = 50 W,
W CL = 5 pF
pF, f = 100 KHz
VIN = 0 or V+,
V+ f = 1 MHz
CNC(on)
2
ns
10
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
mA
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
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Document Number: 71966
S-41158—Rev. E, 21-Jun-04
DG2031
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
rON vs. Analog Voltage and Temperature (NC1)
1.2
1.0
T = 25_C
IA = 100 mA
0.9
0.8
0.6
V+ = 3.0 V
NC
NO
0.4
V+ = 5.0 V
NC
NO
V+ = 2 V
85_C
25_C
−40_C
0.8
r ON − On-Resistance ( W )
r ON − On-Resistance ( W )
1.0
0.7
V+ = 3 V
85_C
25_C
−40_C
0.6
0.5
0.4
0.2
0.3
0.0
0.2
0
1
2
3
4
0
5
1
2
VCOM − Analog Voltage (V)
Supply Current vs. Temperature
4
5
Supply Current vs. Input Switching Frequency
100 mA
V+ = 5 V
10 mA
I+ − Supply Current (A)
10000
1000
V+ = 5 V
VIN = 0 V
100
10
−60
3
VCOM − Analog Voltage (V)
100000
I+ − Supply Current (nA)
V+ = 5 V
85_C
25_C
−40_C
V+ = 3 V
VIN = 0 V
1 mA
100 mA
10 mA
1 mA
100 nA
10 nA
−40
−20
0
20
40
60
80
100
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Temperature (_C)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
10000
600
V+ = 5 V
V+ = 5 V
ICOM(off)
ICOM(on)
1000
INO(off), INC(off)
100
Leakage Current (pA)
Leakage Current (pA)
400
200
ICOM(off)
ICOM(on)
0
INO(off), INC(off)
−200
−400
10
−60
−40
−20
0
20
40
Temperature (_C)
Document Number: 71966
S-41158—Rev. E, 21-Jun-04
60
80
100
−600
0
1
2
3
4
5
VCOM − Analog Voltage (V)
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DG2031
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature
80
NO Switch
RL = 50 W
tON V+ = 2 V
60
50
tON V+ = 3 V
40
tOFF V+ = 2 V
30
tOFF V+ = 3 V
tON V+ = 5 V
tOFF V+ = 5 V
20
10
0
−60
−40
NC Switch
RL = 50 W
70
−20
0
20
40
60
80
t ON / t OFF − Switching Time (ns)
70
t ON / t OFF − Switching Time (ns)
Switching Time vs. Temperature
80
60
50
40
tOFF V+ = 2 V
tONV+ = 5 V
tOFF V+ = 3 V
tOFF V+ = 5 V
20
10
−40
−20
0
Temperature (_C)
LOSS
80
100
− Switching Threshold (V)
OIRR
−50
V+ = 5 V
RL = 50 W
2.5
2.0
1.5
1.0
VT
Loss, OIRR, X TALK (dB)
60
Switching Threshold vs. Supply Voltage
Loss
XTALK
40
3.0
10
−30
20
Temperature (_C)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
−10
tON V+ = 3 V
30
0
−60
100
tON V+ = 2 V
−70
0.5
0.0
−90
1M
100 K
100 M
10 M
1G
0
1
2
3
4
5
6
7
V+ − Supply Voltage (V)
Frequency (Hz)
Charge Injection vs. Analog Voltage
350
Q − Charge Injection (pC)
250
150
50
V+ = 5 V
−50
V+ = 3 V
−150
−250
−350
0
1
2
3
4
5
VCOM − Analog Voltage (V)
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Document Number: 71966
S-41158—Rev. E, 21-Jun-04
DG2031
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
NO or NC
Switch
Input
VOUT
RL
50 W
GND
tr t 5 ns
tf t 5 ns
VINL
Switch Output
COM
IN
Logic
Input
50%
0.9 x VOUT
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT + VCOM
ǒ
RL
Ǔ
R L ) R ON
FIGURE 1. Switching Time
V+
Logic
Input
V+
VNO
VNC
COM
NO
VO
VINH
tr t 5 ns
tf t 5 ns
VINL
NC
RL
50 W
IN
CL
35 pF
GND
VNC = VNO
VO
90%
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make Interval
V+
DVOUT
VOUT
Rgen
+
V+
NC or NO
COM
IN
VIN = 0 − V+
VOUT
CL = 1 nF
GND
IN
On
Off
On
Q = DVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
Document Number: 71966
S-41158—Rev. E, 21-Jun-04
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DG2031
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
COM
RL
Analyzer
Meter
0 V, 2.4 V
GND
IN
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
VCOM
Off Isolation + 20 log V
NOńNC
FIGURE 4. Off-Isolation
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COM
0V, 2.4 V
FIGURE 5. Channel Off/On Capacitance
Document Number: 71966
S-41158—Rev. E, 21-Jun-04