DG2012 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rDS(on): 1 W Typ. Fast Switching - tON : 17 ns, tOFF: 13 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-70 Package Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits DESCRIPTION The DG2012 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 W) and small physical size (SC70), the DG2012 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2012 is built on Vishay Siliconix’s low voltage submicron CMOS process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2012. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Logic SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Device Marking: E7xx Document Number: 72176 S-03723—Rev. A, 07-Apr-03 NC NO 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C SC70-6 DG2012DL www.vishay.com 1 DG2012 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC and COM Pins) . . . . . . . . . . . . . . . . "100 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Power Dissipation (Packages)b 6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 3.1 mW/_C above 70_C SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve Limits -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON rON Flatness rON Flatnessd rON Matchd Switch Off Leakage VNO, VNC, VCOM Currentf Room Fulld 2.7 2.7 Room 5.3 5.3 3 DrON Room Room Fulld -0.5 -5.0 0.5 5.0 Room Fulld -0.5 -5.0 0.5 5.0 Room Fulld -0.5 -5.0 0.5 5.0 1.6 ICOM(on) W V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA INO(off), INC(off) ICOM(off) Channel-On Leakage Current f V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V 0.25 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Input Currentf Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 3 -1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed td Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced www.vishay.com 2 VNO or VNC = 1 1.5 5V V, RL = 300 W W, CL = 35 pF F Figures 1 and 2 CNO(off), CNC(off) CON Room Fulld 43 63 65 Room Fulld 23 45 46 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W, W CL = 5 pF, pF f = 1 MHz ns 2 Room 7 Room -63 Room -64 Room 22 Room 58 VIN = 0 or V+, f = 1 MHz pC dB pF Document Number: 72176 S-03723—Rev. A, 07-Apr-03 DG2012 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.6 or 2.0 Ve Limits -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON rON Flatness rON Flatness V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO INC = 10 mA Current f INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) Room Full 1.4 1.6 2.1 2.3 Room 0.85 Room 0.25 W V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA DrON rON MatchFlat Switch Off Leakage VNO, VNC, VCOM V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full -0.5 -5.0 0.5 5.0 Room Full -0.5 -5.0 0.5 5.0 Room Full -0.5 -5.0 0.5 5.0 2 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitanced Input Currentf Full Cin IINL or IINH 0.6 VIN = 0 or V+ Full 3 -1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 2 2.0 0V V, RL = 300 W W, CL = 35 pF F Figure 1 and 2 CNO(off), CNC(off) Room Full 27 47 48 Room Full 17 37 38 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W, W CL = 5 pF, pF f = 1 MHz 1 Room 10 Room -63 Room -64 Room 21 Room 57 pC dB VIN = 0 or V+, f = 1 MHz CON ns pF Power Supply Power Supply Range V+ Power Supply Current I+ Document Number: 72176 S-03723—Rev. A, 07-Apr-03 1.8 VIN = 0 or V+ 0.01 5.5 V 1.0 mA www.vishay.com 3 DG2012 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Limits -40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd rON Matchd VNO, VNC, VCOM rON rON Flatness Switch Off Leakage Current ICOM(off) ICOM(on) Room Full 1.0 1.2 1.8 1.9 Room 0.55 Room 0.25 W V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA DrON INO(off), INC(off) Channel-On Leakage Current V+ = 4.5 V, VCOM = 0.5 V/2.5 V INO, INC = 10 mA V+ = 5.0 V VNO, VNC = 0.5 V/4.5 V, VCOM = 4.5 V/0.5 V V+ = 5.0 V, VNO, VNC = VCOM = 0.5 V/4.5 V Room Full -0.5 -5.0 0.5 5.0 Room Full -0.5 -5.0 0.5 5.0 Room Full -0.5 -5.0 0.5 5.0 2.4 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.8 VIN = 0 or V+ Full 3 -1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced VNO or VNC = 3 V, V RL = 300 W W, CL = 35 pF F Figure 1 and 2 CNO(off), CNC(off) CON Room Full 17 38 39 Room Full 13 32 33 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W, W CL = 5 pF, pF f = 1 MHz ns 1 Room 20 Room -63 Room -64 Room 20 Room 56 VIN = 0 or V+, f = 1 MHz pC dB pF Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 4 Document Number: 72176 S-03723—Rev. A, 07-Apr-03 DG2012 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM Supply Voltage rON vs. Analog Voltage and Temperature 6 6 IS = 10 mA 4 V+ = 1.8 V 3 V+ = 2 V 2 V+ = 3 V 5 r ON - On-Resistance ( W ) r ON - On-Resistance ( W ) IS = 10 mA 5 V+ = 5 V 4 V+ = 2 V 85_C 25_C -40_C 3 V+ = 3 V 2 1 V+ = 5 V 85_C 25_C -40_C 85_C 25_C 1 -40_C 0 0 0 1 2 3 4 5 0 1 2 VCOM - Analog Voltage (V) 4 5 VCOM - Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10 m 10000 V+ = 5 V VIN = 0 V V+ = 3 V 1m 100 m 1000 I+ - Supply Current (A) I+ - Supply Current (nA) 3 100 10 10 m 1m 100 n 10 n 1n 1 -60 100 p -40 -20 0 20 40 60 80 10 100 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (_C) Leakage Current vs. Temperature Leakage vs. Analog Voltage 250 1000 V+ = 5 V V+ = 5 V T = 25_C 200 150 INO(off)/INC(off) 10 Leakage Current (pA) Leakage Current (pA) 100 ICOM(on) 1 ICOM(off) 100 50 ICOM(on) 0 -50 INO(off)/INC(off) -100 -150 ICOM(off) 0.1 -60 -200 -250 -40 -20 0 20 40 Temperature (_C) Document Number: 72176 S-03723—Rev. A, 07-Apr-03 60 80 100 0 1 2 3 4 5 VCOM, VNO, VNC - Analog Voltage www.vishay.com 5 DG2012 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature and Supply Voltage Insertion Loss, Off-Isolation, Crosstalk vs. Frequency t ON, 10 tON V+ = 2 V 45 40 35 30 tON V+ = 3 V 25 tOFF V+ = 2 V 20 tOFF V+ = 3 V tON V+ = 5 V tOFF V+ = 5 V 15 0 Loss, OIRR, XTALK (dB) t OFF - Switching Time (ns) 50 -20 -30 -40 5 -80 -20 0 20 40 60 80 XTALK -60 -70 -40 OIRR -50 10 0 -60 LOSS -10 -90 100 K 100 1M Switching Threshold vs. Supply Voltage 100 M 1G Charge Injection vs. Analog Voltage 3.0 30 2.5 20 Q - Charge Injection (pC) V T - Switching Threshold (V) 10 M Frequency (Hz) Temperature (_C) 2.0 1.5 1.0 0.5 V+ = 5 V 10 V+ = 3 V 0 V+ = 2 V -10 -20 0.0 -30 0 1 2 3 4 V+ - Supply Voltage (V) www.vishay.com 6 V+ = 5 V RL = 50 W 5 6 7 0 1 2 3 4 5 6 VCOM - Analog Voltage (v) Document Number: 72176 S-03723—Rev. A, 07-Apr-03 DG2012 New Product Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input VINL V+ Switch Input Switch Output COM NO or NC tr t 5 ns tf t 5 ns 50% VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 W GND CL 35 pF 0V tOFF tON Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT + V COM ǒ RL R L ) R ON Ǔ FIGURE 1. Switching Time V+ Logic Input V+ tr <5 ns tf <5 ns VINL COM NO VNO VINH VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ COM NC or NO VOUT VOUT + Vgen IN CL = 1 nF IN On Off On GND Q = DVOUT x CL VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 72176 S-03723—Rev. A, 07-Apr-03 www.vishay.com 7 DG2012 New Product Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO 0V, 2.4 V IN COM RL V COM Off Isolation + 20 log V NOńNC GND Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 8 Document Number: 72176 S-03723—Rev. A, 07-Apr-03