DC COMPONENTS CO., LTD. MML1225 MXL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They are intended for low cost, high volume applications. SOT-89 Pinning .063(1.60) .055(1.40) .066(1.70) .059(1.50) 1 = Gate 2 = Anode 3 = Cathode Absolute Maximum Ratings(TA=25 Characteristic Peak Repetitive Off-State Voltage(RGK=1KΩ) C) 1 Symbol Rating Unit VDRM 300 380 V IT(RMS) 0.8 A MML1225 MXL1225 On-State RMS Current(TC=40oC) Peak Gate Current(10µs Max) IGM 1 A 0.1 W Reverse Peak Gate Voltage VGRM 8 V TJ -40 to +125 TSTG -40 to +125 3 .060(1.52) .058(1.48) .016(0.41) .014(0.35) .120(3.04) .117(2.96) PG(AV) Storage Temperature 2 .020(0.51) .014(0.36) Gate Power Dissipation(20ms Max) Operating Junction Temperature .102(2.60) .095(2.40) .167(4.25) .159(4.05) o .181(4.60) .173(4.40) o C Dimensions in inches and (millimeters) o C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Peak Repetitive Forward Off-State Blocking Current Symbol TA=25oC TA=125oC IDRM Peak Forward On-State Voltage VTM Continuous DC Gate Trigger Current IGT Continuous DC Gate Trigger Voltage VGT IH DC Holding Current DC Latching Current Min Typ Max - - 5 - - 100 Unit µA Test Conditions VAK=Rated VDRM or VRRM RGK=1KΩ ITM=0.4A Peak, TJ=25oC - - 1.4 - - 2.2 - - 200 - - 0.8 V VAK=7V DC, RL=100Ω - - 5 mA RGK=1KΩ, Gate Open V ITM=0.8A Peak, TJ=25oC µA VAK=7V DC, RL=100Ω IL - - 6 mA Critical Rate-of-Rise of Off-State Voltage dv/dt 25 - - V/µS VD=0.67VDRM, RGK=1KΩ, TJ=125oC Critical Rate-of-Rise of Off-State Current di/dt 30 - - A/µS IG=10mA, diG/dt=0.1A/µS, TJ=125oC Gate Controlled Delay Time Tgd - - 0.5 Thermal Resistance, Junction to Case RθJC 100 - - RGK=1KΩ, Gate Open µsec IG=10mA, diG/dt=0.1A/µS o - C/W