Mechanical Dimensions PA10SD Descriptions SOT-89 Dimmension in mm FEATURES ■．Driven directly with IC and MOS device. ■．Feature proprietary, void-free glass passivated chips. ■．Available in voltage ratings from 200 to 600 volts. (VDRM and VRRM) ■．Sensitive gate trigger current. ■．Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETERS Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage (1) SYMBOL V UNITS 400 VOLT VDRM & VRRM PA10SD IT(RMS) 1.0 AMP ITSM 8 AMP Peak Gate-Trigger Current for 3µ sec , Max IGTM 1.0 AMP Peak Gate-Power Dissipation at IGT≦IGTM PGM 0.1 WATT PG(AV) 0.01 WATT RMS On-State Current at Ta=57℃ and Conduction Angle of 180º Peak Surge (Non-Repetitive)On-State Current, ½ Cycle ,at 50Hz or 60Hz Average Gate-Power Dissipation Peak gate reverse voltage VRGM 6 V Peak Off-State Current, (1)Ta=25℃ VDRM & VRRM=Max. Rating Ta=125℃ IDRM & IRRM 10 200 µA MAX Maximum On-State Voltage. (Peak) At Tc=25℃ and IT =Rated Amps VTM 1.7 DC Holding Current,(1) IHO 10 Critical dv/dt 5 Critical Rate-Of-Rise of off-State Voltage.(1) Gate Open,Ta=110℃ VOLT MAX mA MAX V/µ sec DC Gate –Trigger Current for Anode Voltage=7VDC, RL=100Ω IGT 200 DC Gate –Trigger Voltage for Anode Voltage=7VDC, RL=100Ω VGT 0.8 VOLT MAX Gate-Controlled Turn-on Time tD+tR IGT=10mA Tgt 2.2 µ sec RθJ-A 70 Thermal Resistance , Junction-to-Ambient Storage Temperature range Operating Temperature Range , Tj (1)RGK=1KΩ µA MAX ℃/WATT TYP Tstg -40 to + 150 ℃ Toper -40 to + 110 ℃