RENESAS HA12237F

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HA12237F
Audio Signal Processor for Cassette Deck
ADE-207-343 (Z)
Rev.0
Feb. 2002
Description
HA12237F is silicon monolithic bipolar IC providing PB equalizer, REC equalizer system, ALC and each
electronic control switch in one chip.
Functions
• PB equalizer
× 2 channel
• REC equalizer
× 2 channel
• ALC (Automatic Level Control)
• REC mute
• REC head return switch
• Line Amp.
× 2 channel
• Line mute
Features
• REC equalizer is very small number of external parts built-in 2 types of frequency characteristics.
• TYPE I REC correspondence, High-speed dubbing correspondence.
• PB equalizer circuit built-in 2 types of frequency characteristics. (external parts of capacitor only)
• Head control switch built-in.
• Line mute switch built-in.
• Controllable from direct micro-computer output.
HA12237F
Parallel Data Format
Pin No.
Pin Name
Lo
Hi
11
ALC ON/OFF
ALC OFF
ALC ON
12
High/Norm
Normal speed
High speed
13
A/B
B
A
REC Return ON/OFF
Return OFF
Return ON
14
MUTE ON/OFF
MUTE OFF
MUTE ON
15
REC MUTE OFF/ON
REC MUTE ON
REC MUTE OFF
Rev.0, Feb. 2002, page 2 of 2
HA12237F
Pin Description, Equivalent Circuit
(VCC = 12 V, Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No.
Pin Name
Note
16
VCC
V = VCC
21
RECOUT(L)
V = VCC/2
10
RECOUT(R)
26
PBOUT(L)
5
PBOUT(R)
28
EQOUT(L)
3
EQOUT(R)
Equivalent Circuit
Description
VCC pin
VCC
REC output
PB output
EQ output
V = 2.9 V
GND
35
REC-RETURN
34
BIN(L)
37
BIN(R)
V=0V
REC Return
VCC
PB B deck input
PB-NF
BIN
120 k
REC Return
32
AIN(L)
39
AIN(R)
V=0V
PB A deck input
VCC
PB-NF
AIN
120 k
GND
24
RECIN(L)
7
RECIN(R)
27
TAI(L)
4
TAI(R)
V = VCC/2
VCC
V = VCC/2
REC-EQ input
Tape input
100 k
VCC/2
Rev.0, Feb. 2002, page 3 of 3
HA12237F
Pin Description, Equivalent Circuit (cont)
(VCC = 12 V, Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No.
Pin Name
Note
11
ALC ON/OFF
(Control
voltage = 3 V)
12
High/Norm
13
A/B
14
MUTE ON/OFF
15
REC MUTE OFF/ON
Equivalent Circuit
Description
VCC
Mode control input
I
22 k
100 k
GND
19
IREF
V = 1.2 V
18, 36
GND
GND pin
6, 9, 22,
25, 38
NC
NC pin
20
Test mode
Test mode pin
Equalizer reference
current input
GND TEST
31
PB-NF1(L)
40
PB-NF1(R)
30
PB-NF2(L)
1
PB-NF2(R)
V = 0.6 V
VCC
PBNF1 180
330 k
PBNF2
Rev.0, Feb. 2002, page 4 of 4
PB EQ feed back
HA12237F
Pin Description, Equivalent Circuit (cont)
(VCC = 12 V, Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No.
Pin Name
Note
33
RIP
V = VCC/2
Equivalent Circuit
Description
VCC
Ripple filter
V
GND
29
PB-EQ(L)
2
PB-EQ(R)
NAB output
Rev.0, Feb. 2002, page 5 of 5
PB-NF2(L)
+
−
PB-EQ(R)
2
4
3
93/120
(High/Norm)
EQOUT(R)
PB-NF1(R)
40
PB-NF2(R)
5
6
7
23
22
EQ
10
ALC
EQ
21
15
VCC
16
+
9
8
+
11
ALC ON/OFF
High/Norm
A/B
(REC Return ON/OFF)
MUTE ON/OFF
REC MUTE OFF/ON
ALC DET
17
GND
18
mode
20 Test
(Open for normal use)
IREF
19
12
TAI(R)
B
PBOUT(R)
AIN(R)
39
1
24
ALC(L)
13
MUTE
MUTE
25
NC
NC
+
ALC(R)
NC 38
Return SW
Return SW
B
26
RECOUT(L)
14
A
A
PB-EQ(L)
93/120
(High/Norm)
TAI(L)
27
NC
BIN(R)
37
GND
36
BIN(L)
34
RECRETURN
35
+
NC
Rev.0, Feb. 2002, page 6 of 6
+
RECOUT(R)
+
RIP
33
AIN(L)
32
+
−
PB-NF1(L)
31
EQOUT(L)
28
PBOUT(L)
+
29
RECIN(L)
RECIN(R)
+
30
HA12237F
Block Diagram
HA12237F
Functional Description
Power Supply Range
This IC designed to operate on single supply, shown by table 1.
Table 1
Supply Voltage
Item
Power Supply Range
Single supply
6.5 V to 15.0 V
Reference Voltage
This device provide the reference voltage of half the supply voltage that is the signal grounds. As the
peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their
usual value. The block diagram is shown as figure 1.
VCC
16
36
+
−
PB Line Amp. block
+
−
Lch REC-EQ block
+
−
Rch REC-EQ block
33
+
1 µF
Figure 1 Block Diagram of Reference Supply Voltage
Rev.0, Feb. 2002, page 7 of 7
HA12237F
Operating Mode Control
HA12235F provide fully electronic switching circuits. And each operating mode control is controlled by
parallel data (DC voltage).
Table 2
Threshold Voltage (VTH)
Pin No.
Lo
Mid
Hi
Unit
Test Condition
11 to 15
–0.2 to 0.5
—
2.4 to VCC
V
Input Pin
Measure
V
Notes: 1. Each pins are on pulled down with 100 kΩ internal resistor. Therefore, it will be low-level when
each pins are open.
2. Over shoot level and under shoot level of input signal must be the standardized.
(High: VCC, Low: –0.2 V)
Test Mode
Test mode becomes when pin 20 is shorted to GND. Please open pin 20 on the occasion of mount.
Rev.0, Feb. 2002, page 8 of 8
HA12237F
Block Diagram
As this IC is built-in REC return switch, the configuration system can be simple system using a few
external component and the REC/PB head.
RECIN(L)
About these logics, please look at the Parallel Data Format.
24
23
+
RECOUT(L)
21
REC-EQ
2.2µ
8.2k
To ALC
35
120k
Return SW
B head
34
BIN(L)
B
+
120k
A head
AIN(L)
32
A
-
330k
To 27
93/120
(High/Norm)
180
+
31
0.1µ
42k
12k
5.1k
5.1k
28
EQOUT(L)
30
29
0.01µ
Unit R: Ω
C: F
Figure 2 Block Diagram (Lch)
Rev.0, Feb. 2002, page 9 of 9
HA12237F
PB Equalizer
The gain establishment of PB-EQ considers PB output level {(internal Line Amp. + PB Amp.) = 580
mVrms} like figure 3 at the target.
After replace RA and RB with a half-fix volume, adjust level.
REC-EQ adjust the gain in front of input to this IC.
The level digram of 1 kHz is shown figure 3.
Please set “RA + RB ≥ 10 kΩ”
Line Amp.
25.7dB
0.6mV PB-EQ
41.2dB
68mV
30mV
580mV
RA
RB
Figure 3 PB System Level Diagram (1 kHz)
Line Mute
This IC is built-in with mute circuit to Line Amp.
A mute control does with Low/High of pin 14.
Reducing pop noise is so much better 10 kΩ to 22 kΩ resistor to pin 14 in series and 1 µF to 22 µF
capacitor.
A mute is not built-in when doing a power ON/OFF.
Please correspond to it, on the side of a set system.
Rev.0, Feb. 2002, page 10 of 10
HA12237F
REC Equalizer
REC-EQ gain adjust before the input of this IC.
RL needs the value more than 5.6 kΩ based on the output at reference input.
Because mode establishment resistances are built-in, REC-EQ frequency characteristics are respectively
fixed value.
In vase the change of the frequency characteristics are necessary, please inquire the responsible agent
because the adjustment of resistors is necessary.
R1
15k
RECIN(R)
7
Input
25.5mVrms
C2
0.1µ
ALC(R)
8
ALC
R2
2.2k
+
R3
12k
17
ALC DET
EQ
VCC
+
25dB
10 453mVrms
R12
C12
RECOUT(R)
B head
Unit R: Ω
C: F
Figure 4 REC-EQ Block Diagram
Rev.0, Feb. 2002, page 11 of 11
HA12237F
ALC (Automatic Level Control)
ALC is the input decay rate variable system. It has internal variable resistors of pin 8 (pin 23) by REC
signal that is inputted to pin 7 (pin 24).
Pin 17 is detector pin.
The signal input pin is pin 7 (pin 24). Resistor R1, R2 and capacitor C2, external components, for the input
circuit are commended as figure 4. There are requested to use value of the block diagram figure for
performance maintenance of S/N, T.H.D. etc.
Figure 5 shows the relation with R1 and C1 front input point and RECOUT.
ALC operation level acts for the center of +4.5 dB to standard level (453 mVrms).
Then, adopted maximum value circuit, ALC is operated by a large channel of signal.
RECOUT
ALC ON/OFF can switch it by pin 11. Please do ALC ON, after it does for one time ALC OFF inevitably,
for ALC time to start usefully, in order to reset ALC circuit.
453 mV
4.5 dB
Figure 5 ALC Operation Level
Rev.0, Feb. 2002, page 12 of 12
HA12237F
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Maximum supply voltage
VCC Max
16
V
Power dissipation
PT
625
mW
Operating temperature
Topr
–40 to +75
°C
Storage temperature
Tstg
–55 to +125
°C
Operating voltage
Vopr
6.5 to 15
V
Note
Ta ≤ 75°C
Note: HA12235F operates on single supply voltage.
Rev.0, Feb. 2002, page 13 of 13
Rev.0, Feb. 2002, page 14 of 14
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
Norm
Norm
Norm
High
Norm
Norm
Norm
Norm
Norm
Norm
Norm
Norm
Norm
A
A
A/B
A
A
A
A/B
A/B
A
A/B
A
A
A
A
GT PB/REC(2)
GV PB(1)
GV PB(2)
GV PB(3)
Vomax PB
THD PB
VN PB
CT R/L(1)
CT A/B
GV LA
THD LA
PB-EQ maximum output level
PB-EQ T.H.D.
PB-EQ noise voltage
PB-EQ channel separation
PB-EQ crosstalk
Line Amp. gain
Line Amp. T.H.D.
Line Amp. maximum output level Vomax LA
Line mute attenuation
Notes: 1. Large level without clipping
2. VCC = 6.5V
PB-EQ gain
L-MUTE ATT
—
OFF
—
Norm
—
VIH
PB-REC crosstalk
GT PB/REC(1)
—
—
—
VIL
Logical threshold
1k
1k
1k
1k
1k
1k
—
1k
1k
20k
10k
1k
1k
1k
—
—
—
OFF
Norm
A
120.0
—
30.0
30.0
6.0
6.0
—
2.4
—
0.6
0.6
0.6
6.0
*1
—
—
—
ALC
fin
Vin
ON/OFF (Hz) (mVrms)
High/
Norm
Test Condition
A/B
IQ
Symbol
Quiescent current
Item
IC Condition
Other
THD = 1%
Rg = 680Ω, DIN-AUDIO
THD = 1%
PB-EQ→REC-EQ
REC-EQ→PB-EQ
No signal
—
—
60.0 70.0
39
7
L
— 11 to 15
—
—
—
—
—
—
—
28
21
28
28
28
28
28
—
3
10
3
3
3
3
32
32
32
32
—
—
—
—
—
—
—
28
28
28
26
26
26
26
3
3
5
5
5
5
27
27
27
27
%
0.05 0.30
—
70.0 80.0
dB
— Vrms
1.16 1.40
—
dB
4
4
4
4
dB 39/37 28/29
24.2 25.7 27.2
—
60.0 70.0
32
3
—
39
110 200 µVrms 39/37 28/29
—
50.0 60.0
dB
3
% 39/37 28/29
0.5
0.2
—
— Vrms 39
39
0.6
dB
31.2 34.2 37.2
39
— 11 to 15
16
*2
*2
COM Remark
—
—
L
—
0.3
dB
R
—
24
—
—
dB 39/37 28/29
dB
33.3 36.3 39.3
37.4 40.4 43.4
V
VCC
—
2.4
50.0 60.0
—
—
V
0.5
—
–0.2
dB
R
—
12.2 20.2 mA
—
Application Terminal
Input
Output
Min Typ Max Unit
Specification
(Ta = 25°C, VCC = 12 V, PB-EQIN Standard level = 0.6 mVrms at 1 kHz, TAI Standard level = 30 mVrms, PBOUT Standard level = 580 mVrms)
HA12237F
Electrical Characteristics
ON
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
Norm
Norm
Norm
Norm
High
High
High
Norm
Norm
Norm
Norm
Norm
A
A
A
A
A
A
A
A
A
A
A
REC-EQ frequency characteristics GV REC-NN1
GV REC-NN2
GV REC-NN3
REC-EQ frequency characteristics GV REC-HN1
GV REC-HN2
GV REC-HN3
CT R/L(2)
R-MUTE ATT
Vomax REC
THD REC
S/N REC
REC-EQ channel separation
REC-MUTE attenuation
REC-EQ maximum output level
REC-EQ T.H.D.
REC-EQ S/N
Notes: 1. Large level without clipping
2. VCC = 6.5V
High speed
Normal speed
ALC
1k
1k
1k
1k
1k
20k
10k
2k
10k
5k
1k
1k
33.4 35.9 38.4
—
61.0 70.0
66.0 76.0
1.0
–26
*1
*1
—
—
55.0 59.0
0
—
Rg = 2.2kΩ, A-WTG
26.5 28.5 30.5
–26
0.2
23.4 24.9 26.4
–26
0.7
33.2 35.7 38.2
–26
THD = 1%
26.9 28.9 30.9
–26
dB
dB
dB
dB
dB
dB
dB
dB
dB
—
0.5
dB
%
— Vrms
—
23.5 25.0 26.5
7.0
–26
4.5
Min Typ Max Unit
2.0
Other
Specification
+12
Vin
ALC
fin
ON/OFF (Hz) (mVrms)
A
ALC operate level
Symbol
Norm
Item
A/B
High/
IC Condition
—
7
7
7
7
7
7
7
7
7
7
7
R
—
24
24
24
24
24
24
24
24
24
24
24
L
10
10
10
10
10
10
10
10
10
10
10
10
R
21
21
21
21
21
21
21
21
21
21
21
21
L
—
—
—
—
—
—
—
—
—
—
—
—
*2
COM Remark
Application Terminal
Input
Output
(Ta = 25°C, VCC = 12 V, RECIN Standard level = 200 mVrms (IC in Level = 25.5 mVrms) = 0 dB
Test Condition
HA12237F
Electrical Characteristics (cont)
Rev.0, Feb. 2002, page 15 of 15
R21
680
R20
680
R19
680
R18 C20
680 1µ
C24
47µ
+
RIP
33
GND
NC
40
1
PB-NF1(R)
39
AIN(R)
38
37
A
RECRETURN
BIN(R)
36
35
34
BIN(L)
AIN(L)
A
32
PB-NF1(L)
31
2
R2
5.1k
R1
5.1k
3
93/120
(High/Norm)
EQOUT(R)
C1
0.01µ
+
−
B
Return SW
Return SW
B
28
93/120
(High/Norm)
29
1 2 3
4
TAI(R)
25
6
C12
0.1µ
C6
0.1µ
7
R5
15k
24
R13
15k
PBOUT(R) RECIN(R)
R4
10k
2.2µ
+C5
5
26
R3
10k
C3
0.1µ
C4 +
0.47µ
1 2 3
JP1
MUTE
MUTE
27
JP2
C13
2.2µ
8
22
9
EQ
GND
IREF
TEST
18
19
20
R7
8.2k
2.2µ
+C7
10
11
12
13
14
15
16
VCC
17
ALC DET
ALC
EQ
C11
2.2µ
R11
8.2k
21
RECOUT(R)
R6
2.2k
23
R12
2.2k
RECOUT(L)
Note: About JP1, 2
Short 1 and 2: In case that you measure PBEQ + Line Amp. in total
(Ain or Bin → PBOUT)
Short 2 and 3: In case that you separately measure PBEQ and Line Amp.
(Ain or Bin → EQOUT, TAI → PBOUT)
About JP3
Please use JP3 with OPEN.
AIN(R)
BIN(R)
BIN(L)
AIN(L)
C18
47µ
30
R17
5.1k
EQOUT(L)
PBOUT(L) RECIN(L)
PBOUT(L)
PBOUT(R)
0.01µ
TAI(L)
R14
10k
NC
NC
R16
5.1k
RECIN(L)
RECIN(R)
R15
10k
ALC(L)
ALC(R)
C14
0.47µ
C15
0.1µ
NC
NC
TAI(L)
PB-EQ(L)
PB-EQ(R)
PB-NF2(L)
PB-NF2(R)
+
EQOUT(R)
+
−
Rev.0, Feb. 2002, page 16 of 16
RECOUT(R)
+
+
E
D
C
B
A
22k
JP3
High/Norm
SW2
ALC
ON/OFF
SW1
REC MUTE
OFF/ON
SW5
MUTE
R8 ON/OFF
+
SW4
C8
A/B
(REC Return ON/OFF)
SW3
C10 10µ
R9
1M
+
TAI(R)
RECOUT(L)
+
+
EQOUT(L)
OFF
ON
Normal
High
B(ON)
A(OFF)
OFF
ON
ON
OFF
GND
REC MUTE
MUTE
A/B
High/Normal
ALC
100µ
+C9
A
B
C
D
E
Unit R: Ω
C: F
Connector2
Connector1
VCC
DVCC
GND
HA12237F
Test Circuit
HA12237F
Characteristic Curves
Quiescent Current vs. Supply Voltage
16
Quiescent Current IQ (mA)
A, Norm, ALC-OFF
A, Norm, ALC-ON
B, Norm, ALC-ON
A, High, ALC-OFF
14
12
10
8
7
5
9
11
13
Supply Voltage (V)
15
17
PB-EQ Gain vs. Frequency
PB-EQ Gain (dB)
60
120µ
40
93µ
20
Ain
→EQOUT
Bin
VCC = 12 V
0
10
100
1k
10k
Frequency (Hz)
100k
1M
Rev.0, Feb. 2002, page 17 of 17
HA12237F
PB-EQ Maximum Output Level vs. Supply Voltage
2
1.8
PB-EQ Vomax (Vrms)
1.6
1.4
1.2
Ain
→EQOUT
Bin
T.H.D. ≈ 1%
100Hz_Norm
200Hz_High
1kHz_Norm
2kHz_High
10kHz_Norm
20kHz_High
1
0.8
0.6
0.4
5
6
7
8
9
10
11
12
Supply Voltage (V)
13
14
15
16
17
PB-EQ Total Harmonic Distortion vs. Output Level (1)
PB-EQ Total Harmonic Distortion T.H.D. (%)
100
10
Ain
→EQOUT
Bin
Vout = 60mVrms = 0dB
VCC = 12V
NORM-speed
100Hz
1kHz
10kHz
1
0.1
0.01
–10
Rev.0, Feb. 2002, page 18 of 18
0
10
20
Output Level Vout (dB)
30
40
HA12237F
PB-EQ Total Harmonic Distortion vs. Output Level (2)
PB-EQ Total Harmonic Distortion T.H.D. (%)
100
Ain
→EQOUT
Bin
Vout = 60mVrms = 0dB
High-speed
200Hz
2kHz
20kHz
10
1
0.1
0.01
–10
0
10
20
Output Level Vout (dB)
30
40
PB-EQ NOISE Level vs. Supply Voltage (1)
220
EQOUT
DIN-AUDIO filter
Norm-speed
BIN Lch
BIN Rch
AIN Lch
AIN Rch
200
PB-EQ NOISE (µVrms)
180
160
140
120
100
80
60
5
7
9
11
Supply Voltage (V)
13
15
17
Rev.0, Feb. 2002, page 19 of 19
HA12237F
PB-EQ NOISE Level vs. Supply Voltage (2)
220
EQOUT
DIN-AUDIO filter
High-speed
BIN Lch
BIN Rch
AIN Lch
AIN Rch
200
PB-EQ NOISE (µVrms)
180
160
140
120
100
80
60
5
−20
7
9
11
Supply Voltage (V)
13
15
17
PB-EQ Channel Separation vs. Frequency (L→R) (1)
PB-EQ Channel Separation (dB)
VCC = 12 V
Ain→EQOUT
L→R
−40
−60
−80
High-speed
Norm-speed
−100
−120
10
Rev.0, Feb. 2002, page 20 of 20
100
1k
Frequency (Hz)
10k
100k
HA12237F
−20
PB-EQ Channel Separation vs. Frequency (R→L) (2)
PB-EQ Channel Separation (dB)
VCC = 12 V
Ain→EQOUT
R→L
−40
−60
−80
High-speed
Norm-speed
−100
−120
10
−20
100
1k
Frequency (Hz)
10k
100k
PB-EQ Channel Separation vs. Frequency (L→R) (3)
PB-EQ Channel Separation (dB)
VCC = 12 V
Bin→EQOUT
L→R
−40
−60
High-speed
−80
Norm-speed
−100
−120
10
100
1k
Frequency (Hz)
10k
100k
Rev.0, Feb. 2002, page 21 of 21
HA12237F
PB-EQ Channel Separation vs. Frequency (R→L) (4)
−20
PB-EQ Channel Separation (dB)
VCC = 12 V
Bin→EQOUT
R→L
−40
−60
−80
High-speed
Norm-speed
−100
−120
10
100
1k
Frequency (Hz)
10k
100k
PB-EQ Crosstalk vs. Frequency (INPUT: A→B)
−40
VCC = 12 V
EQOUT
A→B
Crosstalk (dB)
−60
Norm-speed
−80
High-speed
−100
−120
10
Rev.0, Feb. 2002, page 22 of 22
100
1k
Frequency (Hz)
10k
100k
HA12237F
PB-EQ Crosstalk vs. Frequency (INPUT: B→A)
−40
VCC = 12 V
EQOUT
B→A
Crosstalk (dB)
−60
Norm-speed
−80
High-speed
−100
−120
10
Ripple Rejection Ratio R.R.R. (dB)
0
−20
100
1k
Frequency (Hz)
10k
100k
Ripple Rejection Ratio vs. Frequency (PB-EQ)
(EQOUT)
Vin = 100 mVrms
EQOUT
VCC = 12 V
Norm-speed
High-speed
−40
−60
−80
10
100
1k
Frequency (Hz)
10k
100k
Rev.0, Feb. 2002, page 23 of 23
HA12237F
Line Amp. Gain vs. Frequency
30
TAI→PBOUT
VCC = 12 V
Vin = 30 mVrms
Line Amp. Gain (dB)
26
22
18
14
10
10
100
1k
Frequency (Hz)
10k
100k
Line Amp. Total Harmonic Distortion vs. Output Level
Line Amp. Total Harmonic Distortion T.H.D. (%)
100
10
TAI→PBOUT
VCC = 12 V
PBOUT = 580 mVrms = 0 dB
100 Hz
1 kHz
10 kHz
1
0.1
0.01
−40
Rev.0, Feb. 2002, page 24 of 24
−30
−20
−10
0
10
20
Output Level Vout (dB)
30
40
HA12237F
Line Amp. Maximum Output Level vs. Supply Voltage
Line Amp. Maximum Output Level Vomax (Vrms)
6
5
TAI→PBOUT
T.H.D. ≈ 1%
100 Hz
1 kHz
10 kHz
4
3
2
1
0
4
6
8
10
12
14
Supply Voltage (V)
16
18
Line Mute Attenuation vs. Frequency
−40
TAI→PBOUT
VCC = 12 V
Line Mute Attenuation (dB)
−60
−80
−100
−120
−140
10
100
1k
Frequency (Hz)
10k
100k
Rev.0, Feb. 2002, page 25 of 25
HA12237F
−40
Line Amp. Channel Separation vs. Frequency (L→R)
Channel Separation (dB)
TAI→PBOUT
VCC = 12 V
Lch→Rch
−60
−80
−100
−120
10
−40
100
1k
Frequency (Hz)
10k
100k
Line Amp. Channel Separation vs. Frequency (R→L)
Channel Separation (dB)
TAI→PBOUT
VCC = 12 V
Rch→Lch
−60
−80
−100
−120
10
Rev.0, Feb. 2002, page 26 of 26
100
1k
Frequency (Hz)
10k
100k
HA12237F
Ripple Rejection Ratio vs. Frequency (Line Amp.)
(PBOUT)
0
−20
−40
−60
−80
10
100
1k
Frequency (Hz)
10k
100k
ALC Output Level vs. Input Level
9
RECin→RECOUT
RECin = 200 mVrms = 0dB
VCC = 12 V
100Hz_Norm
200Hz_High
1kHz_Norm
2kHz_High
8
ALC Output Level RECOUT (dB)
Ripple Rejection Ratio R.R.R. (dB)
Vin = 100 mVrms
PBOUT
VCC = 12 V
7
6
5
4
3
2
1
0
0
5
10
15
20
Input Level Vin (dB)
25
30
0 dB = 200 mVrms
Rev.0, Feb. 2002, page 27 of 27
HA12237F
ALC Total Harmonic Distortion vs. Input Level
ALC Total Harmonic Distortion T.H.D. (%)
10
1
RECin→RECOUT
RECin = 200 mVrms = 0dB
VCC = 12 V
100Hz_Norm
200Hz_High
1kHz_Norm
2kHz_High
0.1
0.01
0
5
10
15
20
Input Level Vin (dB)
25
30
ALC Operate Level vs. Supply Voltage
8
RECin→RECOUT
RECin = 200 mVrms
Vin = +12 dB
100Hz_Norm
200Hz_High
1kHz_Norm
2kHz_High
ALC Operate Level RECOUT (dB)
7
6
5
4
3
2
1
4
Rev.0, Feb. 2002, page 28 of 28
6
8
10
12
14
Supply Voltage (V)
16
18
HA12237F
ALC Operate Level vs. Frequency
8
ALC Operate Level RECOUT (dB)
7
6
RECin→RECOUT
RECin = 200 mVrms
Vin = +12 dB
VCC = 12 V
ALC_Level_Norm
ALC_Level_High
5
4
3
2
1
0
10
100
1k
10k
Frequency (Hz)
REC-EQ Gain vs. Frequency
60
RECin(before R5<Lch> or R13<Rch>) = 25.5 mVrms→RECOUT
Vin = −26 dB
VCC = 12 V
REC-EQ Gain (dB)
Norm
High
40
20
0
10
100
1k
Frequency (Hz)
10k
100k
Rev.0, Feb. 2002, page 29 of 29
HA12237F
REC-EQ Maximum Output Level vs. Supply Voltage
REC-EQ Maximum Output Level Vomax (Vrms)
6
5
4
RECin(before R5<Lch> or R13<Rch>)→RECOUT
T.H.D. ≈ 1%
100Hz_REC_Norm
200Hz_REC_High
1kHz_REC_Norm
2kHz_REC_High
10kHz_REC_Norm
20kHz_REC_High
3
2
1
0
5
6
7
8
9 10 11 12 13
Supply Voltage (V)
14
15
16
17
REC-EQ Total Harmonic Distortion vs. Input Level (1)
REC-EQ Total Harmonic Distortion T.H.D. (%)
100
10
RECin(before R5<Lch> or R13<Rch>) = 25.5 mVrms = 0 dB→RECOUT
VCC = 12 V
Norm-speed
315Hz
1kHz
5kHz
10kHz
1
0.1
0.01
–25
–20
Rev.0, Feb. 2002, page 30 of 30
–15
–10
–5
0
5
Input Level Vin (dB)
10
15
20
HA12237F
REC-EQ Total Harmonic Distortion vs. Input Level (2)
RECin(before R5<Lch> or R13<Rch>) = 25.5 mVrms = 0 dB→RECOUT
VCC = 12 V
High-speed
315Hz
2kHz
10kHz
20kHz
10
1
0.1
0.01
–25
–20
–15
–10
–5
0
5
Input Level Vin (dB)
10
15
20
REC-EQ Signal to Noise Ratio vs. Supply Voltage
70
High-speed
REC-EQ Signal to Noise Ratio S/N (dB)
REC-EQ Total Harmonic Distortion T.H.D. (%)
100
65
60
Norm-speed
55
50
45
40
4
A-WTG filter
f = 1kHz
Vin = 25.5 mVrms = 0 dB
6
8
10
12
14
Supply Voltage (V)
16
18
Rev.0, Feb. 2002, page 31 of 31
HA12237F
REC Mute Attenuation vs. Frequency
−40
REC Mute Attenuation (dB)
−60
RECin(before R5<Lch> or R13<Rch>)→RECOUT
Vin = +17 dB
VCC = 12 V
Norm-speed
−80
High-speed
−100
−120
−140
10
−40
100
1k
Frequency (Hz)
10k
100k
REC-EQ Channel Separation vs. Frequency (L→R)
REC-EQ Channel Separation (dB)
RECin(before R5<Lch> or R13<Rch>)→RECOUT
VCC = 12 V
L→R
−60
Norm-speed
−80
High-speed
−100
−120
−140
10
Rev.0, Feb. 2002, page 32 of 32
100
1k
Frequency (Hz)
10k
100k
HA12237F
−40
REC-EQ Channel Separation vs. Frequency (R→L)
REC-EQ Channel Separation (dB)
RECin(before R5<Lch> or R13<Rch>)→RECOUT
VCC = 12 V
R→L
−60
Norm-speed
−80
High-speed
−100
−120
−140
10
100
1k
Frequency (Hz)
10k
100k
REC-EQ Ripple Rejection Ratio R.R.R. (dB)
Ripple Rejection Ratio vs. Frequency
(RECOUT)
0
Vin = 100 mVrms
RECOUT
VCC = 12 V
Norm-speed
−20
High-speed
−40
−60
−80
10
100
1k
Frequency (Hz)
10k
100k
Rev.0, Feb. 2002, page 33 of 33
HA12237F
Crosstalk vs. Supply Voltage (1)
−40
Ain→RECOUT
Ain mode, LM-OFF, RM-OFF
100 Hz
1 kHz
10 kHz
−45
Crosstalk (Vrms)
−50
−55
−60
−65
−70
−75
7
5
9
11
13
Supply Voltage (V)
15
17
15
17
Crosstalk vs. Supply Voltage (2)
−40
RECIN→PBOUT
Ain mode, LM-OFF, RM-OFF
100 Hz
1 kHz
10 kHz
−45
Crosstalk (Vrms)
−50
−55
−60
−65
−70
−75
5
Rev.0, Feb. 2002, page 34 of 34
7
9
11
13
Supply Voltage (V)
HA12237F
REC-RETURN-ON RESISTOR Gain vs. Frequency
10
680Ω
0
BIN
V
−10
−20
−30
−40
10
100
1k
Frequency (Hz)
10k
100k
PBOUT BIAS Leak vs. Supply Voltage
−20
Iin = 600 µA
PBOUT = 580 mVrms
A, Norm,
ALC, RM-OFF
−30
PBOUT BIAS Leak (dB)
REC-RETURN-ON RESISTOR Gain (dB)
Rg = 680 Ω
f = 50k, 100kHz sin
5.1kΩ
600µA 10Ω
B
−40
−50
100kHz LM_OFF<R>
100kHz LM_OFF<L>
50kHz LM_OFF<R>
50kHz LM_OFF<L>
100kHz LM_ON<R>
100kHz LM_ON<L>
50kHz LM_ON<R>
50kHz LM_ON<L>
−60
−70
−80
4
5
6
7
8
9 10 11 12 13 14 15 16 17
Supply Voltage (V)
Rev.0, Feb. 2002, page 35 of 35
HA12237F
Package Dimensions
As of July, 2001
20
40
11
10
0.575
0.10
*Dimension including the plating thickness
Base material dimension
Rev.0, Feb. 2002, page 36 of 36
M
*0.17 ± 0.05
0.15 ± 0.04
0.13
1.40
1.70 Max
1
*0.25 ± 0.05
0.22 ± 0.04
0.09
0.13 +– 0.05
9.0 ± 0.2
31
0.65
Unit: mm
9.0 ± 0.2
7.0
30
21
1.0
0.575
0˚ – 8˚
0.50 ± 0.10
Hitachi Code
JEDEC
JEITA
Mass (reference value)
FP-40B
—
Conforms
0.2 g
HA12237F
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 37 of 37