To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SB1409(L)/(S) Silicon PNP Epitaxial ADE-208-877 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1409(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –180 V Collector to emitter voltage VCEO –160 V Emitter to base voltage VEBO –5 V Collector current IC –1.5 A Collector peak current I C(peak) –3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –180 — — V I C = –1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –160 — — V I C = –10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –1 mA, IC = 0 Collector cutoff current I CBO — — –10 µA VCB = –160 V, IE = 0 60 — 200 VCE = –5 V, IC = –150 mA*2 hFE2 30 — — VCE = –5 V, IC = –500 mA*2 Collector to emitter saturation voltage VCE(sat) — — –1 V I C = –500 mA, IB = –50 mA Base to emitter voltage VBE — — –1.5 V VCE = –5 V, IC = –150 mA Gain bandwidth product fT — 240 — MHz VCE = –5 V, IC = –150 mA Collector output capacitance Cob — 25 — pF VCB = –10 A, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 Notes: 1. The 2SB1409(L)/(S) is grouped by h FE1 as follows. B C 60 to 120 100 to 200 2. Pulse test. 2 2SB1409(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation 20 –1.0 PW = IC (max) –0.3 s 1m –0.1 on a ti (T C = –0.03 Ta = 25°C 1 Shot Pulse –0.01 –3 –10 –30 –100 –300 Collector to emitter Voltage VCE (V) ) °C 25 50 100 Case Temperature TC (°C) 0 150 DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics –0.8 –0.6 1,000 PC = 18 W –5 5 –4. –4 –3.5 –3 –2.5 DC current transfer ratio hFE –1.0 Collector Current IC (A) 10 ms iC (peak) er 10 –3 Op Collector Current IC (A) –10 DC Collector power dissipation Pc (W) 30 –2 –0.4 –1.5 –1 mA –0.2 IB = 0 0 TC = 25°C –10 –20 –30 –40 –50 Collector to emitter Voltage VCE (V) 300 100 30 10 –0.01 VCE = –5 V Ta = 25°C –0.03 –0.1 –0.3 Collector current IC (A) –1.0 3 2SB1409(L)/(S) Saturation Voltage vs. Collector Current –10 –1.0 –0.1 –0.01 –0.001 lC = 10 lB Ta = 25°C –0.01 –0.1 Collector current IC (A) Base to emitter saturation voltage VBE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) Saturation Voltage vs. Collector Current –10 –3 –1.0 –0.3 –0.1 –0.03 –1.0 –3.0 1,000 –1.6 –1.2 –0.8 –0.4 VCE = –5 V Ta = 25°C 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) Gain bandwidth product fT (MHz) –2.0 Collector current IC (A) –0.1 –0.3 –1.0 Collector current IC (A) Gain Bandwidth Product vs. Collector Current Typical Transfer Characteristics 4 lC = 10 lB Ta = 25°C 300 100 30 10 –0.01 VCE = –5 V Ta = 25°C –0.03 –0.1 –0.3 Collector current IC (A) –1.0 2SB1409(L)/(S) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 300 100 30 10 f = 1 MHz IE = 0 Ta = 25°C 3 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 5 2SB1409(L)/(S) When using this document, keep the following in mind: 1. 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