To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SD2337 Silicon NPN Triple Diffused ADE-208-929 (Z) 1st. Edition September 2000 Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SD2337 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 6 V Collector current IC 2 A Collector peak current I C(peak) 5 A Collector power dissipation PC 1.5 W PC * 1 20 Junction temperature Tj 150 °C Storage temperature Tstg –45 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CEO voltage 150 — — V I C = 50 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6 — — V I E = 5 mA, IC = 0 Collector cutoff current I CBO — — 1 µA VCB = 120 V, IE = 0 60 — 320 VCE = 4 V, IC = 50 mA hFE2 60 — — VCE = 10 V, IC = 500 mA*2 Collector to emitter saturation voltage VCE(sat) — — 3.0 V I C = 500 mA, IB = 50 mA*2 Base to emitter voltage VBE — — 1.0 V VCE = 4 V, IC = 50 mA DC current transfer ratio hFE1* 1 Notes: 1. The 2SD2337 is grouped by h FE1 as follows. 2. Pulse test. B C D 60 to 120 100 to 200 160 to 320 2 2SD2337 Maximum Collector Dissipation Curve Area of Safe Operation 10 20 TC 100 50 Ambient temperature Ta (°C) Case temperature TC (°C) 0.5 (60, 0.4 A) 0.2 0.1 150 (150 V, 65 mA) 0.05 2 5 10 20 50 100 200 Collector to emitter voltage VCE (V) Typical Output Characteristics 0.8 0.6 TC = 25°C 10 9 8 7 6 5 4 0.4 3 2 0.2 Typical Transfer Characteristics 1,000 1 mA IB = 0 Collector current IC (mA) Collector current IC (A) 1.0 ) °C 25 0 Ta (15, 2 A) 1.0 = 1.5 W 2 (T C 10 IC (max) (Continuous) n tio ra pe O Collector current IC (A) 5 DC Collector power dissipation Pc (W) 30 VCE = 4 V Pulse 500 200 TC = 75°C 25 100 –25 50 20 10 5 2 1 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 3 DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 500 200 TC = 75°C 25 100 –25 50 20 10 5 10 4 VCE = 4 V Pulse 20 50 100 200 500 1,000 2,000 Collector current IC (mA) Collector to emitter saturation voltage VCE (sat) (V) 2SD2337 Collector to Emitter Saturation Voltage vs. Collector Current 0.5 lC = 10 lB Pulse 0.2 TC = 75°C 0.1 0.05 –25 25 0.02 0.01 0.005 10 30 100 300 1,000 2,000 Collector current IC (mA) 2SD2337 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. 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