To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC458 (LG), 2SC2310 Silicon NPN Epitaxial ADE-208-1044A (Z) 2nd. Edition Mar. 2001 Application • Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE –100 –100 mA Collector power dissipation PC 200 200 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C 2 2SC458 (LG), 2SC2310 Electrical Characteristics (Ta = 25°C) 2SC458 (LG) 2SC2310 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — 55 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 30 — — 50 — — V I C = 1 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 — — 0.5 µA VCB =18 V, IE = 0 Emitter cutoff current I EBO — — 0.5 — — 0.5 µA VEB = 2 V, IC = 0 100 — 500 100 — 320 — — 0.2 — — 0.2 V I C = 10 mA, IB = 1 mA Base to emitter voltage VBE — 0.67 0.75 — 0.67 0.75 V VCE = 12 V, IC = 2 mA Gain bandwidth product f T — 230 — — 230 — MHz VCE = 12 V, IC = 2 mA Collector output capacitance Cob — 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz Noise figure NF — 3 5 — 3 5 dB VCE = 6 V, IC = 0.1 mA, f = 120 Hz, Rg = 500 Ω Small signal input impedance hie — 16.5 — — 16.5 — kΩ VCE = 5V, IC = 0.1mA, f = 270 Hz Small signal voltage feedback ratio hre — 70 — — 70 — × 10 –6 Small signal current transfer ratio hfe — 130 — — 130 — Small signal output admittance hoe — 11.0 — — 11.0 — DC current transfer ratio hFE* Collector to emitter saturation voltage Note: 1 VCE(sat) VCE = 12 V, IC = 2 mA µS 1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows. B C D 2SC458 (LG) 100 to 200 160 to 320 250 to 500 2SC2310 160 to 320 — 100 to 200 3 2SC458 (LG), 2SC2310 Typical Output Characteristics 200 100 P 10 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 60 20 50 8 0m W 40 6 30 4 20 10 µA 2 0 50 100 150 Ambient Temperature Ta (°C) 5 10 15 20 25 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 300 4 DC Current Transfer Ratio hFE 5 Collector Current IC (mA) = IB = 0 0 VCE = 12 V 3 2 1 0 4 C 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 VCE = 12 V 200 Ta = 75°C 25 100 0 0.03 0.1 0.3 1.0 3 10 Collector Current IC (mA) 30 2SC458 (LG), 2SC2310 Base to Emitter Voltage vs. Ambient Temperature 300 0.9 f = 270 Hz VCE = 12 V Base to Emitter Voltage VBE (V) Small Signal Current Transfer Ratio hfe Small Signal Current Transfer Ratio vs. Collector Current 200 100 0 0.03 0.1 0.3 1.0 3 10 0.8 0.7 0.6 0.5 0.4 –20 30 Collector Current IC (mA) IE = 0 f = 1 MHz 3 2 1 4 8 12 16 20 Collector to Base Voltage VCB (V) Emitter Input Capacitance Cib (pF) Collector Output Capacitance Cob (pF) 80 5 5 0 0 20 40 60 Ambient Temperature Ta (°C) Emitter Input Capacitance vs. Emitter to Base Voltage Collector Output Capacitance vs. Collector to Base Voltage 4 VCE = 12 V IC = 2 mA IC = 0 f = 1 MHz 4 3 2 1 0 2 4 6 8 Emitter to Base Voltage VEB (V) 10 5 2SC458 (LG), 2SC2310 Contours of Constant Noise Figure Contours of Constant Noise Figure 10 14 12 5 Signal Source Resistance Rg (kΩ) Signal Source Resistance Rg (kΩ) 10 10 2 NF = 1dB 8 2 1.0 6 3 0.5 4 0.2 6 VCE = 6 V f = 120 Hz 8 0.1 0.05 0.1 0.2 0.5 1.0 2.0 Collector Current IC (mA) 2 NF 1.0 1 .5 d B 0.5 2 0.2 0.1 0.05 6 =0 2 1 3 NF = 0.5 dB 1.0 0.5 2 0.2 3 4 0.1 8 0.05 0.1 0.2 0.5 1.0 2.0 Collector Current IC (mA) Noise Figure vs. Frequency 8 Noise Figure NF (dB) Signal Source Resistance Rg (kΩ) VCE = 6 V f = 10 kHz 2 10 4 5 4 1.0 Contours of Constant Noise Figure 10 8 5 VCE = 6 V f = 1 kHz IC = 0.1 mA Rg = 500 Ω VCE = 6 V 6 4 2 4 0.1 0.2 0.5 1.0 2.0 Collector Current IC (mA) 0 30 100 300 1k 3k Frequency f (Hz) 10k 30k 2SC458 (LG), 2SC2310 Noise Figure vs. Collector to Emitter Voltage Noise Figure NF (dB) 8 IC = 0.1 mA Rg = 500 Ω f = 120 Hz 6 4 2 0 2 5 10 20 Collector to Emitter Voltage VCE (V) h Parameter vs. Collector Current 100 50 20 VCE = 6 V 10 f = 270 Hz 5 hie 2 h 1.0 hfe re 0.5 hoe 0.2 0.1 0.05 hoe hre hfe hie 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) 30 h Parameter vs. Collector to Emitter Voltage 1.8 Percentage of Relative to VCE = 5V Percentage of Relative to IC = 0.1mA 1 IC = 0.1 mA f = 270 Hz 1.6 hre 1.4 hoe 1.2 hoe 1.0 hfe hie 0.8 0.5 hfe hie hre 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 7 2SC458 (LG), 2SC2310 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) 8 TO-92 (1) Conforms Conforms 0.25 g 2SC458 (LG), 2SC2310 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 9