R SD103A THRU SD103C SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES DO-35 For general purpose applications The SD103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and 1.083(27.5) MIN are click suppressions, efficient full wavebridges in telephone subsets, and blocking JF coupling diodes for fast switching and low logic le vel applications. Other applications 0.079(2.0) MAX DIA diodes in re chargeable low voltage battery systems. These diodes are also available in the MiniMELF case with the type designation 0.150(3.8) MAX LL103A to thru LL103C. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1.083(27.5) MIN MECHANICAL DATA 0.020(0.52) MAX DIA Case: DO-35 Glass case Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) VRRM VRRM VRRM Ptot IFSM TJ TSTG SD103A SD103B SD103C Power Dissipation (infinite Heat Sink) Maximum Single cycle surge 60Hz sine wave Junction temperature Storage Temperature Range Units Value Symbols Peak Reverse Voltage 15 V V V mW A 125 C -55 to+150 C 40 30 20 400 1) 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Max. Unis IR IR IR 5 5 5 mA mA mA Forward voltage drop at IF=20mA IF=200mA VF VF 0.37 0.6 V V Junction Capacitance at VR=0V ,f=1MHz CJ 50 pF Reverse Recovery time at IF=IR=50mA,recover to 200mA recover to 0.1 IR trr 10 ns Symbols Leakage current at VR=30V VR=20V VR=10V SD103A SD103B SD103C Thermal resistance,junction to Ambient RqJA Min. Typ. 300 1) K/W 1) Valid provided that electrodes are kept at ambient temperature JINAN JINGHENG ELECTRONICS CO., LTD. 2-77 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTICS CURVES SD103A THRU SD103C Figure 1. Typical variation of fwd.current vs.fwd. Voltage for primary conduction through the schottky barrier Figure 2. Typical high current forward conduction curve tp=300ms,duty cycle=2% (mA) 10 A 3 5 Tj= 25 C 10 2 4 3 10 IF IF 1 10 -1 10 -2 2 1 0.5 0 0 1V 0.5 1 VF 1.5V VF Figure 3. Typical non repetitive forward surge current versus pulse width Figure 4. Typical variation of reverse current at various temperatures A μA 50 10 3 125 C 40 100 C 10 2 75 C 30 10 50 C IR IF 20 25 C 1 10 0 10 -3 10 -2 10 -1 1 10 10 -2 10 -3 10 ms tp JINAN JINGHENG ELECTRONICS CO., LTD. -1 0 10 20 30 40 50V VR 2-78 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTICS CURVES SD103A THRU SD103C Figure 5. Blocking voltage deration versus temperature at various average forward currents V 50 40 100mA 30 200mA 400mA VR 20 10 100 0 200 C Tamb Figure 6. Typical capacitance versus reverse voltage pF 100 7 5 4 3 2 10 CJ 7 5 4 3 2 1 0 10 20 30 40 50V VR JINAN JINGHENG ELECTRONICS CO., LTD. 2-79 HTTP://WWW.JINGHENGGROUP.COM