SD103A THRU SD103C

R
SD103A THRU SD103C
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
DO-35
For general purpose applications
The SD103 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring.The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering, biasing, and
1.083(27.5)
MIN
are click suppressions, efficient full wavebridges in telephone subsets, and blocking
JF
coupling diodes for fast switching and low logic le vel applications. Other applications
0.079(2.0)
MAX
DIA
diodes in re chargeable low voltage battery systems.
These diodes are also available in the MiniMELF case with the type designation
0.150(3.8)
MAX
LL103A to thru LL103C.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
1.083(27.5)
MIN
MECHANICAL DATA
0.020(0.52)
MAX
DIA
Case: DO-35 Glass case
Weight: Approx. 0.13 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
SD103A
SD103B
SD103C
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 60Hz sine wave
Junction temperature
Storage Temperature Range
Units
Value
Symbols
Peak Reverse Voltage
15
V
V
V
mW
A
125
C
-55 to+150
C
40
30
20
400 1)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Max.
Unis
IR
IR
IR
5
5
5
mA
mA
mA
Forward voltage drop at IF=20mA
IF=200mA
VF
VF
0.37
0.6
V
V
Junction Capacitance at VR=0V ,f=1MHz
CJ
50
pF
Reverse Recovery time at IF=IR=50mA,recover to 200mA
recover to 0.1 IR
trr
10
ns
Symbols
Leakage current at VR=30V
VR=20V
VR=10V
SD103A
SD103B
SD103C
Thermal resistance,junction to Ambient
RqJA
Min.
Typ.
300 1)
K/W
1) Valid provided that electrodes are kept at ambient temperature
JINAN JINGHENG ELECTRONICS CO., LTD.
2-77
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES SD103A THRU SD103C
Figure 1. Typical variation of fwd.current vs.fwd.
Voltage for primary conduction through the
schottky barrier
Figure 2. Typical high current forward
conduction curve tp=300ms,duty cycle=2%
(mA)
10
A
3
5
Tj= 25 C
10
2
4
3
10
IF
IF
1
10
-1
10
-2
2
1
0.5
0
0
1V
0.5
1
VF
1.5V
VF
Figure 3. Typical non repetitive forward surge
current versus pulse width
Figure 4. Typical variation of reverse current at
various temperatures
A
μA
50
10
3
125 C
40
100 C
10
2
75 C
30
10
50 C
IR
IF
20
25 C
1
10
0
10
-3
10
-2
10
-1
1
10
10
-2
10
-3
10
ms
tp
JINAN JINGHENG ELECTRONICS CO., LTD.
-1
0
10
20
30
40
50V
VR
2-78
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES SD103A THRU SD103C
Figure 5. Blocking voltage deration versus
temperature at various average forward currents
V
50
40
100mA
30
200mA
400mA
VR
20
10
100
0
200 C
Tamb
Figure 6. Typical capacitance versus reverse
voltage
pF
100
7
5
4
3
2
10
CJ
7
5
4
3
2
1
0
10
20
30
40
50V
VR
JINAN JINGHENG ELECTRONICS CO., LTD.
2-79
HTTP://WWW.JINGHENGGROUP.COM