SD101A TH U R SD101C

R
SD101A TH RU SD101C
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
DO-35
FEATURES
For general purpose applications
The SD101 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop and fast
1.083(27.5)
MIN
JF
switching make it ideal for protection of MOS devices, steering, biasing, and
coupling diodes for fast switching and low logic level applications.
0.079(2.0)
MAX
DIA
These diodes are also available in the MiniMELF case with the type
designation LL101A to LL101C.
0.150(3.8)
MAX
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
1.083(27.5)
MIN
Case: DO-35 glass case
Polarity: Color band denotes cathode end
0.020(0.52)
MAX
DIA
Weight: Approx. 0.05 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
Peak Reverse Voltage
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
SD101A
SD101B
SD101C
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
Units
60
50
40
2.0
V
V
mW
A
125
C
-55 to+150
C
400 1)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbols
Reverse breakover voltage
at IR=10mA
Leakage current at VR=50V
VR=40V
VR=30V
Forward voltage drop at IF=1mA
IF=15mA
Junction Capacitance at VR=0V ,f=1MHz
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
VR
VR
VR
IR
IR
IR
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
VF
VF
VF
VF
VF
VF
SD101A
SD101B
SD101C
CJ
CJ
CJ
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
Thermal resistance,junction to Ambient
Min.
Typ.
Max.
V
V
V
60
50
40
200
200
200
0.41
0.4
0.39
1
0.95
0.9
2.0
2.1
2.2
1
trr
300 1)
RqJA
Unis
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
ns
K/W
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
JINAN JINGHENG ELECTRONICS CO., LTD.
2-75
HTTP://WWW.JINGHENGGROUP.COM
RATINS AND CHARACTERISTICS CURVES SD101A THRU SD101C
Figure 2. Typical forward conduction curve of
combination Schottky barrier and PN junction
guard ring
Figure 1. Typical variation of fwd.current vs.fwd.
Voltage for primary conduction through the
schottky barrier
mA
mA
100
10
5
A
B
A
B
C
2
C
80
1
5
60
2
IF
IF
40
0.1
5
20
2
0.01
0.5
0
1V
0.5
0
VF
1V
VF
Figure 4. Typical capacitance curve as a function
of reverse voltage
Figure 3.Typical variation of reverse current
at various temperatures
pF
μA
100
2
150 C
5
125 C
2
100 C
10
5
75 C
2
IR
B
A
1
C
1
50 C
CJ
5
2
0.1
25 C
5
2
0.01
0
10
20
30
40
50V
0
VR
JINAN JINGHENG ELECTRONICS CO., LTD.
10
20
30
40
50V
VR
2-76
HTTP://WWW.JINGHENGGROUP.COM