LL101A THUR LL101C

R
LL101A THUR LL101C
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
For general purpose applications
MiniMELF
The LL101 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop
and fast switching make it ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and low logic level applications
These diodes are also available in the DO-35 case with the type
0.063(1.6)
0.055(1.4)
designation SD101A to SD101C.
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Dimensions in inches and (millimeters)
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
LL101A
LL101B
LL101C
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10ms square wave
Junction temperature
Storage Temperature Range
Units
60
50
40
2.0
V
V
mW
A
125
C
-55 to+150
C
400 1)
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Min.
Symbols
Reverse breakover voltage
at IR=10mA
LL101A
LL101B
LL101C
Leakage current at VR=50V
VR=40V
VR=30V
LL101A
LL101B
LL101C
Forward voltage drop at IF=1mA
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
VF
VF
VF
VF
VF
VF
LL101A
LL101B
LL101C
CJ
CJ
CJ
IF=15mA
Junction Capacitance at VR=0V ,f=1MHz
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR
JINAN JINGHENG ELECTRONICS CO., LTD.
Typ.
Max.
200
200
200
0.41
0.4
0.39
1
0.95
0.9
2.0
2.1
2.2
1
trr
2-37
Unis
V
V
V
60
50
40
VRRM
VRRM
VRRM
IR
IR
IR
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
ns
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C
Figure 2. Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
mA
mA
100
10
5
A
B
A
B
C
2
C
80
1
5
60
2
IF
IF
40
0.1
5
20
2
0.01
0.5
0
1V
0.5
0
VF
Figure 4. Typical capacitance curve as a function
of reverse voltage
Figure 3.Typical variation of reverse current
at versus temperature
pF
μ A
100
1V
VF
2
150 C
5
125 C
2
100 C
10
5
75 C
2
IR
B
A
1
C
1
50 C
C
5
2
0.1
25 C
5
2
0.01
0
10
20
30
40
50V
0
VR
JINAN JINGHENG ELECTRONICS CO., LTD.
10
20
30
40
50V
VR
2-38
HTTP://WWW.JINGHENGGROUP.COM