JINANJINGHENG LL103B

R
LL103A THUR LL103C
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
For general purpose applications
MiniMELF
The LL103 series is a Metal-on-silicon junction Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering, biasing, and coupling
JF
diodes for fast switching and low logic level applications. Other applications are click
suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in
0.063(1.6)
0.055(1.4)
rechargeable low voltage battery systems.
These diodes are also available in the DO-35 case with the type designation
SD103A to SD103C.
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Value
15
Units
V
V
V
mW
A
125
C
-55 to+150
C
Symbols
VRRM
VRRM
VRRM
Ptot
IFSM
TJ
TSTG
LL103A
LL103B
LL103C
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 60Hz sine wave
Junction temperature
Storage Temperature Range
40
30
20
400 1)
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Min.
Symbols
Typ.
Max.
Unis
IR
IR
IR
5
5
5
mA
mA
mA
Forward voltage drop at IF=20mA
IF=200mA
VF
VF
0.37
0.6
V
V
Junction Capacitance at VR=0V ,f=1MHz
CJ
50
pF
Reverse Recovery time at IF=IR=50mA,recover to 200mA
recover to 0.1 IR
trr
10
ns
Leakage current at VR=30V
VR=20V
VR=10V
LL103A
LL103B
LL103C
2-36
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
Figure 1. Typical variation of forward current vs. Forward.
Voltage for primary conduction through the
schottky barrier
Figure 2. Typical high current forward
conduction curve tp=300ms,duty cycle=2%
IF(mA)
10
A
3
5
Tj= 25 C
10
2
4
3
10
IF
IF
1
10
-1
10
-2
2
1
0.5
0
0
1V
0.5
1
VF
1.5V
VF
Figure 3. Typical non repetitive forward surge
current versus pulse width
Figure 4. Typical variation of reverse current at
various temperatures
μA
50
10
3
125 C
40
100 C
10
2
75 C
30
10
50 C
IR
IF
20
25 C
1
10
0
10
-3
10
-2
10
-1
1
10
10
2
10
3
10
ms
-1
0
10
20
30
40
50V
VR
tp
2-37
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
Figure 5. Blocking deration versus temperature
at various average forward currents
V
50
40
100mA
30
200mA
400mA
VR
20
10
100
0
200C
TA
Figure 6. Typical capacitance versus
reverse voltage
pF
100
7
5
4
3
2
10
CJ
7
5
4
3
2
1
0
10
20
30
40
50V
VR
2-38
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM