R LL41 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES For general purpose applications MiniMELF This diode features very low turn-on voltage and high breakdown voltage .These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type designation BAT41. 0.063(1.6) 0.055(1.4) High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) MECHANICAL DATA Case: MiniMELF glass case(SOD-80 ) Polarity: Color band denotes cathode end Dimensions in inches and (millimeters) Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Repetitive Peak Reverse Voltage VRRM IF IFRM IFSM Ptot TJ TA TSTG Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp ＜1s, d＜ 0.5, Surge forward current at tp ＜ 10mS , Power Dissipation at TA=25 C TA=25 C TA=65 C Junction temperature Ambient Operating temperature Range Storage Temperature Range Units V mA 100 100 350 750 400 1) 1) mA mA mW 1) 1) 125 C C -65 to+125 -65 to+150 C 1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS Reverse breakdown voltage Tested with 100mA/300ms Pulses Symbols Min. Typ. V(BR)R 100 110 Forward voltage Pulse Test tp ＜ 300ms at IF=1mA, at IF=200mA VF VF Leakage current Pulse Test tp ＜ 300ms at VR=50V at VR=50V,TJ=100 C IR IR 0.40 CJ trr RqJA 2 Junction Capacitance at VR=1V ,f=1MHz Reverse recovery time Form IF=10mA,IR=10mA,IR=1mA Thermal resistance junction to ambient Air Max. Unis V 0.45 1.00 V V 100 20 nA mA 5 ns pF 300 1) K/W 1) Valid provided that electrodes are kept at ambient temperature JINAN JINGHENG ELECTRONICS CO., LTD. 2-46 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL41 Figure 1. Forward current versus forward voltage at different temperatures(typical values) Figure 2. Forward current versus forward voltage (typical values) IF(mA) 10 IF(A) 3 1 Tj= 25 C 10 2 0.8 0.6 10 1 10 -1 10 -2 Tamb=150 C Tamb= 25 C Tamb= -55 C 0.4 0.2 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 0.2 0.4 0.6 0.8 1 1.2 1.4 VF(V) VF(V) Figure 3.Reverse current versus ambient temperature IR(mA) 10 2 90% confidence VR=50V 10 1 max. typ. 1 10 -1 10 -2 0 25 50 75 100 125 Tamb=( C) JINAN JINGHENG ELECTRONICS CO., LTD. 2-47 HTTP://WWW.JINGHENGGROUP.COM