BAT41

R
BAT41
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
DO-35
For general porpose applications
This diode features very low turn-on voltage and high breakdown voltage.
These devices are protected by a PN junction guard ring against excessive
1.083(27.5)
MIN
JF
voltage, such as electrostatic discharges.
The diode is also available in the MinMELF case with type designation LL41.
0.079(2.0)
MAX
DIA
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
0.150(3.8)
MAX
MECHANICAL DATA
1.083(27.5)
MIN
Case: DO-35 glass case
0.020(0.52)
MAX
DIA
Polarity:color band denotes cathode end
Weight: Approx. 0.13 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
Repetitive Peak Reverse Voltage
VRRM
IF
IFRM
IFSM
Ptot
TJ
TA
TSTG
Forward Continuous Current at TA=25 C
Repetitive Peak Forward Current at tp<1s, d<0.5
Surge Forward Current at tp<10mS ,
Power Dissipation at
TA=25 C
TA=25 C
TA=65 C
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
Units
V
mA
mA
mA
mW
100
100
350
750
400
1)
1)
1)
1)
125
C
C
-65 to+125
-65 to+150
C
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Reverse Breakdown Voltage Tested with 100mA/300msPulses
Forward voltage Pulse Test tp 300ms at IF=1mA
IF=200mA
Leakage current pulse test tp 300ms at VR=50V,TJ=25℃
at VR=50V,TJ=100℃
Junction Capacitance at VR=1V ,f=1MHz
Min.
V(BR)R
VF
VF
IR
IR
CJ
100
0.4
Max.
2-16
Unis
V
0.45
1.0
V
V
100
20
nA
mA
pF
2
Reverse Recovery Time Form IF=10mA,to IR=10mA
trr
to IR=1mA RL=100W
Thermal Resistance Junction to Ambien Air
RqJA
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
JINAN JINGHENG ELECTRONICS CO., LTD.
Typ.
110
ns
5
300
1)
K/W
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES BAT41
Figure 2.Reverse current versus ambient
temperature
Figure 1. Forward current versus forward voltage
at different temperatures(typical values)
IR(mA)
IF(mA)
10
2
10
3
90% confidence
VR=50V
10
2
1
10
max.
typ.
10
1
1
10
-1
10
-2
0
Tamb=150 C
Tamb= 25 C
Tamb= -55 C
0.2
0.4
0.6
0.8
1
1.2
10
-1
10
-2
0
1.4
25
VF(V)
50
75
100
125
Tamb=( C)
Figure 3.Reverse current versus continuous
Reverse voltage(typical values)
IR(mA)
10
2
10
1
125 C
100 C
75 C
1
50 C
10
-1
25 C
10
-2
10
-3
0
JINAN JINGHENG ELECTRONICS CO., LTD.
20
40
60
2-17
80
100
VR(V)
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES BAT41
Figure 4.Capacitance CJ versus revers applied
voltage VR (typical values)
CJ(pF)
4
Tamb= 25 C
3
2
1
0
JINAN JINGHENG ELECTRONICS CO., LTD.
2
4
6
2-18
8
10
VR(V)
HTTP://WWW.JINGHENGGROUP.COM