R BAT41 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES DO-35 For general porpose applications This diode features very low turn-on voltage and high breakdown voltage. These devices are protected by a PN junction guard ring against excessive 1.083(27.5) MIN JF voltage, such as electrostatic discharges. The diode is also available in the MinMELF case with type designation LL41. 0.079(2.0) MAX DIA High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.150(3.8) MAX MECHANICAL DATA 1.083(27.5) MIN Case: DO-35 glass case 0.020(0.52) MAX DIA Polarity:color band denotes cathode end Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols Repetitive Peak Reverse Voltage VRRM IF IFRM IFSM Ptot TJ TA TSTG Forward Continuous Current at TA=25 C Repetitive Peak Forward Current at tp<1s, d<0.5 Surge Forward Current at tp<10mS , Power Dissipation at TA=25 C TA=25 C TA=65 C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range Units V mA mA mA mW 100 100 350 750 400 1) 1) 1) 1) 125 C C -65 to+125 -65 to+150 C 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS Symbols Reverse Breakdown Voltage Tested with 100mA/300msPulses Forward voltage Pulse Test tp 300ms at IF=1mA IF=200mA Leakage current pulse test tp 300ms at VR=50V,TJ=25℃ at VR=50V,TJ=100℃ Junction Capacitance at VR=1V ,f=1MHz Min. V(BR)R VF VF IR IR CJ 100 0.4 Max. 2-16 Unis V 0.45 1.0 V V 100 20 nA mA pF 2 Reverse Recovery Time Form IF=10mA,to IR=10mA trr to IR=1mA RL=100W Thermal Resistance Junction to Ambien Air RqJA 1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35) JINAN JINGHENG ELECTRONICS CO., LTD. Typ. 110 ns 5 300 1) K/W HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES BAT41 Figure 2.Reverse current versus ambient temperature Figure 1. Forward current versus forward voltage at different temperatures(typical values) IR(mA) IF(mA) 10 2 10 3 90% confidence VR=50V 10 2 1 10 max. typ. 10 1 1 10 -1 10 -2 0 Tamb=150 C Tamb= 25 C Tamb= -55 C 0.2 0.4 0.6 0.8 1 1.2 10 -1 10 -2 0 1.4 25 VF(V) 50 75 100 125 Tamb=( C) Figure 3.Reverse current versus continuous Reverse voltage(typical values) IR(mA) 10 2 10 1 125 C 100 C 75 C 1 50 C 10 -1 25 C 10 -2 10 -3 0 JINAN JINGHENG ELECTRONICS CO., LTD. 20 40 60 2-17 80 100 VR(V) HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES BAT41 Figure 4.Capacitance CJ versus revers applied voltage VR (typical values) CJ(pF) 4 Tamb= 25 C 3 2 1 0 JINAN JINGHENG ELECTRONICS CO., LTD. 2 4 6 2-18 8 10 VR(V) HTTP://WWW.JINGHENGGROUP.COM