ESMT F59L512M81A Flash 512Mbit (64M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 250us (Typ.) - Block Erase time: 2ms (Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Command Register Operation Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download NOP: 4 cycles Cache Program Operation for High Performance Program Cache Read Operation Copy-Back Operation EDO mode OTP Operation Bad-Block-Protect ORDERING INFORMATION Product ID F59L512M81A -25TG Speed Package Comments 25 ns 48 pin TSOPI Pb-free GENERAL DESCRIPTION The device is a 64Mx8bit with spare 2Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 512 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 300us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block. Data in the page mode can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and command inputs as well as data input/output. The copy back function Elite Semiconductor Memory Technology Inc. allows the optimization of defective blocks management: when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. The cache program feature allows the data insertion in the cache register while the data register is copied into the Flash array. This pipelined program operation improves the program throughput when long files are written inside the memory. A cache read feature is also implemented. This feature allows to dramatically improving the read throughput when consecutive pages have to be streamed out. This device includes extra feature: Automatic Read at Power Up. Publication Date: May 2014 Revision: 1.0 1/40 ESMT F59L512M81A PIN CONFIGURATION (TOP VIEW) (TSOPI 48L, 12mm X 20mm Body, 0.5mm Pin Pitch) NC NC NC NC NC NC R/B RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 NC NC NC NC I/O7 I/O6 I/O5 I/O4 NC NC NC VCC VSS NC NC NC I/O3 I/O2 I/O1 I/O0 NC NC NC NC Pin Description Symbol I/O0~I/O7 CLE ALE Pin Name Data Inputs / Outputs Command Latch Enable Address Latch Enable Functions The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to Hi-Z when the chip is deselected or when the outputs are disabled. The CLE input controls the activating path for commands sent to the internal command registers. Commands are latched into the command register through the I/O ports on the rising edge of the WE signal with CLE high. The ALE input controls the activating path for address sent to the internal address registers. Addresses are latched into the address register through the I/O ports on the rising edge of WE with ALE high. The CE input is the device selection control. When the device is in the Busy state, CE Chip Enable RE Read Enable WE Write Enable WP Write Protect CE high is ignored, and the device does not return to standby mode in program or erase operation. Regarding CE control during read operation, refer to ’Page read’ section of Device operation. The RE input is the serial data-out control, and when it is active low, it drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse. The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low. Ready / Busy Output The R/ B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to Hi-Z condition when the chip is deselected or when outputs are disabled. VCC Power VCC is the power supply for device. VSS Ground NC No Connection R /B Lead is not internally connected. Note: Connect all VCC and VSS pins of each device to common power supply outputs. Do not leave VCC or VSS disconnected. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 2/40 ESMT F59L512M81A BLOCK DIAGRAM ARRAY ORGANIZATION Address Organization I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 A0 A1 A2 A3 A4 A5 A6 1st cycle 2nd cycle A8 A9 A10 A11 L* L* L* 3rd cycle A12 A13 A14 A15 A16 A17 A18 4th cycle A20 A21 A22 A23 A24 A25 A26 Note: Column Address: Starting Address of the Register. *L must be set to “Low”. * The device ignores any additional input of address cycles than required. Elite Semiconductor Memory Technology Inc. I/O7 A7 L* A19 L* Address Column Address Column Address Row Address Row Address Publication Date: May 2014 Revision: 1.0 3/40 ESMT F59L512M81A Product Introduction The device is a 528Mbit memory organized as 32K rows (pages) by 2,112x8 columns. Spare 64x8 columns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 512 separately erasable 128K-byte blocks. It indicates that the bit-by-bit erase operation is prohibited on the device. The device has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE . Command Latch Enable (CLE) and Address Latch Enable (ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. Command Set Function Read Read for Copy Back Read ID Reset Page Program Copy-Back Program Block Erase Random Data Input(1) Random Data Output(1) Read Status Cache Program Cache Read Read Start For Last Page Cache Read 1st Cycle 00h 00h 90h FFh 80h 85h 60h 85h 05h 70h 80h 31h 3Fh Acceptable Command during Busy 2nd Cycle 30h 35h 10h 10h D0h E0h 15h - O O Note: 1. Random Data Input / Output can be executed in a page. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 4/40 ESMT F59L512M81A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Temperature Under Bias VCC VIN VI/O TBIAS -0.6 to +4.6 -0.6 to +4.6 -0.6 to VCC + 0.3 (< 4.6) -40 to +125 ℃ Storage Temperature TSTG -65 to +150 ℃ Short Circuit Current IOS 5 mA Voltage on any pin relative to VSS V Note: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS (Voltage reference to GND, TA = 0 to 70℃) Parameter Symbol Min. Typ. Max. Unit VCC VSS 2.7 0 3.3 0 3.6 0 V V Supply Voltage Supply Voltage DC AND OPERATION CHARACTERISTICS (Recommended operating conditions otherwise noted) Parameter Page Read with Serial Access Operating Program Current Erase Symbol Test Conditions Min. Typ. ICC1 tRC=25ns, CE =VIL, IOUT=0mA - 15 ICC2 ICC3 - - 15 15 Stand-by Current (TTL) ISB1 CE =VIH, WP =0V/VCC - Stand-by Current (CMOS) ISB2 CE = VCC -0.2, WP =0V/ VCC ILI VIN=0 to VCC (max) ILO VOUT=0 to VCC (max) Input Leakage Current Output Leakage Current VIH(1) (1) VIL VOH VOL Input High Voltage Input Low Voltage, All inputs Output High Voltage Level Output Low Voltage Level Output Low Current (R/ B ) IOL (R / B ) IOH=-400uA IOL=2.1mA VOL=0.4V Max. Unit 30 mA - 1 mA - 10 50 uA - - ±10 uA - - ±10 uA 0.8 x VCC -0.3 2.4 - - VCC +0.3 0.2 x VCC 0.4 V V V V 8 10 - mA Note: 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC+0.4V for durations of 20ns or less. 2. Typical value are measured at VCC =3.3V, TA=25℃. And not 100% tested. VALID BLOCK Symbol Min. Typ. Max. Unit NVB 502 - 512 Blocks Note: 1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits which cause status failure during program and erase operation. Do not erase or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of initial invalid blocks. 2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block at the time of shipment and is guaranteed to be a valid block up to 1K program/erase cycles with 4bit/512Byte ECC. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 5/40 ESMT F59L512M81A AC TEST CONDITION (TA=0 to 70℃, VCC=2.7V~3.6V, unless otherwise noted) Parameter Condition Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load 0V to VCC 5 ns VCC /2 1 TTL Gate and CL=50pF Note: Refer to Ready/ Busy section, R/ B output’s Busy to Ready time is decided by the pull-up resistor (RP) tied to the R/ B pin. CAPACITANCE (TA=25℃, VCC=3.3V, f=1.0MHz) Item Symbol Test Condition Min. Max. Unit CI/O CIN VIL = 0V VIN = 0V - 8 8 pF pF Input / Output Capacitance Input Capacitance Note: Capacitance is periodically sampled and not 100% tested. MODE SELECTION CLE ALE CE H L L WE Mode RE WP L H X H L H X H L L H H L H L H H L L L H H Data Input L L L H X Data Output X X X X X X X X X(1) X X X X X H X X X X X H X X X X X H H L 0V/VCC(2) Read Mode Write Mode Command Input Address Input (4 clock) Command Input Address Input (4 clock) During Read (Busy) During Program (Busy) During Erase (Busy) Write Protect Stand-by Note: 1. X can be VIL or VIH. 2. WP should be biased to CMOS high or CMOS low for stand-by. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 6/40 ESMT F59L512M81A Program / Erase Characteristics Parameter Symbol Min. Typ. Max. Unit Average Program Time Dummy Busy Time for Cache Program Number of Partial Program Cycles in the Same Page Block Erase Time tPROG tCBSY - 300 3 750 750 us us NOP - - 4 Cycle tBERS - 3 10 ms Note: 1. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V VCC and 25℃ temperature. 2. tPROG is the average program time of all pages. Users should be noted that the program time variation from page to page is possible. 3. Max. time of tCBSY depends on timing between internal program completion and data in. AC Timing Characteristics for Command / Address / Data Input Symbol Min. Max. Unit CLE Setup Time CLE Hold Time Parameter tCLS(1) tCLH 12 5 - ns ns CE Setup Time tCS 20 - ns CE Hold Time tCH 5 - ns WE Pulse Width ALE Setup Time ALE Hold Time Data Setup Time Data Hold Time Write Cycle Time tWP 12 - ns tALS tALH tDS(1) tDH tWC 12 5 12 5 25 - ns ns ns ns ns tWH 10 - ns 100 - ns WE High Hold Time Address to Data Loading Time (1) tADL (2) Note: 1. The transition of the corresponding control pins must occur only once while WE is held low. 2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 7/40 ESMT F59L512M81A AC Characteristics for Operation Symbol Min. Max. Unit Data Transfer from Cell to Register Parameter tR - 25 us ALE to RE Delay tAR 10 - ns CLE to RE Delay tCLR 10 - ns Ready to RE Low tRR 20 - ns RE Pulse Width tRP 12 - ns WE High to Busy tWB - 100 ns WP Low to WE Low (disable mode) tWW 100 WP High to WE Low (enable mode) Read Cycle Time tRC 25 - ns RE Access Time tREA - 20 ns CE Access Time tCEA - 25 ns RE High to Output Hi-Z tRHZ - 100 ns CE High to Output Hi-Z tCHZ - 30 ns CE High to ALE or CLE Don’t Care tCSD 0 - ns RE High to Output Hold tRHOH 15 - ns RE Low to Output Hold tRLOH 5 - ns CE High to Output Hold tCOH 15 - ns RE High Hold Time tREH 10 - ns Output Hi-Z to RE Low tIR 0 - ns RE High to WE Low tRHW 100 - ns tWHR 60 - ns tRST - 5 10 500 5(1) us us us us tDCBSYR - 30 us WE High to RE Low Device Resetting Time during ... Cache Busy in Read Cache (following 31h and 3Fh) Read Program Erase Ready ns Note: 1. If reset command (FFh) is written at Ready state, the device goes into Busy for maximum 5us. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 8/40 ESMT F59L512M81A NAND Flash Technical Notes Mask Out Initial Invalid Block(s) Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by ESMT. The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 4bit/512Byte ECC. Identifying Initial Invalid Block(s) and Replacement Management All device locations are erased (FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. ESMT makes sure that either the 1st or 2nd page of every initial invalid block has non-FFh data at the 1st byte column address in the spare area. Do not erase or program factory-marked bad blocks. The host controller must be able to recognize the initial invalid block information and to create a corresponding table to manage block replacement upon erase or program error when additional invalid blocks develop with Flash memory usage. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 9/40 ESMT F59L512M81A Algorithm for Bad Block Scanning Check “FFh” at the 1st Byte column address in the spare area of the 1st and 2nd page in the block. For (i=0; i<Num_of_LUs; i++) { For (j=0; j<Blocks_Per_LU; j++) { Defect_Block_Found=False; Read_Page(lu=i, block=j, page=0); If (Data[coloumn=First_Byte_of_Spare_Area]!=FFh) Defect_Block_Found=True; Read_Page(lu=i, block=j, page=1); If (Data[coloumn=First_Byte_of_Spare_Area]!=FFh) Defect_Block_Found=True; If (Defect_Block_Found) Mark_Block_as_Defective(lu=i, block=j); } } Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 10/40 ESMT F59L512M81A Error in write or read operation Within its lifetime, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data. The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The additional block failure rate does not include those reclaimed blocks. Failure Mode Write Read Detection and Countermeasure sequence Erase failure Program failure Up to 4 bits failure Read Status after Erase → Block Replacement Read Status after Program → Block Replacement Verify ECC → ECC Correction Note: Error Correcting Code --> RS Code or BCH Code etc. Example: 4bit correction / 512 Byte Program Flow Chart Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 11/40 ESMT F59L512M81A Erase Flow Chart Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 12/40 ESMT F59L512M81A Read Flow Chart Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 13/40 ESMT F59L512M81A Block Replacement Addressing for program operation Within a block, the pages must be programmed consecutively from the LSB (Least Significant Bit) page of the block to MSB (Most Significant Bit) pages of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB among the pages to be programmed. Therefore, LSB page doesn’t need to be page 0. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 14/40 ESMT F59L512M81A System Interface Using CE don’t-care For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications that use slow cycle time on the order of μ-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. Program/Read Operation with “ CE not-care” Address Information I/O I/Ox DATA Data In / Out Col. Add1 I/O0~7 2112 Byte A0 ~ A7 Elite Semiconductor Memory Technology Inc. ADDRESS Col. Add2 Row Add1 Row Add2 A8 ~ A11 A20 ~ A26 A12 ~ A19 Publication Date: May 2014 Revision: 1.0 15/40 ESMT F59L512M81A Command Latch Cycle Address Latch Cycle Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 16/40 ESMT F59L512M81A Input Data Latch Cycle Serial access Cycle after Read (CLE = L, ALE = L, WE = H) Note: 1. Dout transition is measured at ±200mV from steady state voltage at I/O with load. 2. tRHOH starts to be valid when frequency is lower than 33MHz. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 17/40 ESMT F59L512M81A Serial access Cycle after Read ( EOD Type CLE = L, ALE = L, WE = H) NOTE: 1. Transition is measured at +/-200mV from steady state voltage with load. This parameter is sample and not 100% tested. (tCHZ, tRHZ) 2. tRLOH is valid when frequency is higher than 33MHz. tRHOH starts to be valid when frequency is lower than 33MHz. Status Read Cycle Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 18/40 ESMT F59L512M81A Read Operation Read Operation (Intercepted by CE ) Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 19/40 ESMT F59L512M81A Random Data Output In a Page 1 1 Page Program Operation Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 20/40 ESMT F59L512M81A Page Program Operation with Random Data Input 1 1 Note: tADL is the time from WE rising edge of final address cycle to the WE rising edge of first data cycle. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 21/40 ESMT F59L512M81A Copy-Back Operation with Random Data Input 1 1 Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 22/40 ESMT F59L512M81A Cache Program Operation Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 23/40 ESMT F59L512M81A Cache Read Operation Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 24/40 ESMT F59L512M81A Block Erase Operation Read ID Operation ID Definition Table ID Access command = 90h 1st Cycle (Maker Code) 2nd Cycle (Device Code) 3rd Cycle 4th Cycle 5th Cycle C8h D0h 90h 95h 30h Description 1st Byte 2nd Byte 3rd Byte 4th Byte 5th Byte Maker Code Device Code Internal Chip Number, Cell Type, etc Page Size, Block Size, etc Plane Number, Plane Size, ECC Level Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 25/40 ESMT F59L512M81A 3rd ID Data Internal Chip Number Cell Type Reserved Interleave Program Between multiple chips Cache Program Description 1 2 4 8 2 Level Cell 4 Level Cell 8 Level Cell 16 Level Cell Reserved Not Support Support Not Support Support I/O7 Description 1KB 2KB 4KB 8KB 8 16 64KB 128KB 256KB 512KB x8 x16 45ns Reserved 25ns Reserved I/O7 Description I/O7 I/O6 I/O5 I/O4 0 1 I/O5 I/O4 I/O3 I/O2 0 0 1 1 0 1 0 1 I/O3 I/O2 I/O1 0 0 1 1 I/O0 0 1 0 1 I/O1 0 0 1 1 I/O0 0 1 0 1 I/O1 I/O0 0 0 1 1 0 1 0 1 0 0 0 1 0 1 4th ID Data Page Size (w/o redundant area) Redundant Area Size (byte/512byte) Block Size (w/o redundant area) Organization Serial Access Time I/O6 0 1 0 0 1 1 0 1 0 1 0 1 0 0 1 1 0 1 0 1 5th ID Data ECC Level Plane Number Plane Size (w/o redundant area) Reserved 4bit/512B 2bit/512B 1bit/512B Reserved 1 2 4 8 64Kb 128Kb 256Kb 512Kb 1Gb 2Gb 4Gb 8Gb Reserved I/O6 I/O5 I/O4 I/O3 0 0 1 1 0 0 0 0 1 1 1 1 0 Elite Semiconductor Memory Technology Inc. 0 0 1 1 0 0 1 1 I/O2 0 1 0 1 0 1 0 1 0 1 0 1 Publication Date: May 2014 Revision: 1.0 26/40 ESMT F59L512M81A DEVICE OPERATION Page Read Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h command, four-cycle address, and 30h command. After initial power up, the 00h command can be skipped because it has been latched in the command register. The 2,112Byte of data on a page are transferred to cache registers via data registers within 25us (tR). Host controller can detect the completion of this data transfer by checking the R/ B output. Once data in the selected page have been loaded into cache registers, each Byte can be read out in 25ns cycle time by continuously pulsing RE . The repetitive high-to-low transitions of RE clock signal make the device output data starting from the designated column address to the last column address. The device can output data at a random column address instead of sequential column address by using the Random Data Output command. Random Data Output command can be executed multiple times in a page. After power up, device is in read mode so 00h command cycle is not necessary to start a read operation. A page read sequence is illustrated in the figure below, where column address, page address are placed in between commands 00h and 30h. After tR read time, the R/ B de-asserts to ready state. Read Status command (70h) can be issued right after 30h. Host controller can toggle RE to access data starting with the designated column address and their successive bytes. Read Operation Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 27/40 ESMT F59L512M81A Random Data Output In a Page Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 28/40 ESMT F59L512M81A Page Program The device is programmed based on the unit of a page, and consecutive partial page programming on one page without intervening erase operation is strictly prohibited. Addressing of page program operations within a block should be in sequential order. A complete page program cycle consists of a serial data input cycle in which up to 2,112byte of data can be loaded into data register via cache register, followed by a programming period during which the loaded data are programmed into the designated memory cells. The serial data input cycle begins with the Serial Data Input command (80h), followed by a four-cycle address input and then serial data loading. The bytes not to be programmed on the page do not need to be loaded. The column address for the next data can be changed to the address follows Random Data Input command (85h). Random Data Input command may be repeated multiple times in a page. The Page Program Confirm command (10h) starts the programming process. Writing 10h alone without entering data will not initiate the programming process. The internal write engine automatically executes the corresponding algorithm and controls timing for programming and verification, thereby freeing the host controller for other tasks. Once the program process starts, the host controller can detect the completion of a program cycle by monitoring the R/ B output or reading the Status bit (I/O6) using the Read Status command. Only Read Status and Reset commands are valid during programming. When the Page Program operation is completed, the host controller can check the Status bit (I/O0) to see if the Page Program operation is successfully done. The command register remains the Read Status mode unless another valid command is written to it. A page program sequence is illustrated in the figure below, where column address, page address, and data input are placed in between 80h and 10h. After tPROG program time, the R/ B de-asserts to ready state. Read Status command (70h) can be issued right after 10h. Program & Read Status Operation Random Data Input In a page Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 29/40 ESMT F59L512M81A Cache Program Cache Program is an extension of Page Program, which is executed with 2,112 byte data registers, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed into memory cell. After writing the first set of data up to 2,112 bytes into the selected cache registers, Cache Program command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time (tCBSY) and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy status bit (I/O6). Pass/fail status of only the previous page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit (I/O5) for internal Ready/Busy may be polled to identity the completion of internal programming. If the system monitors the progress of programming only with R/ B , the last page of the target programming sequence must be programmed with actual Page Program command (10h). Cache Program (available only within a block) Note: 1. Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula. 2. tPROG = Program time for the last page + Program time for the (last-1)th page – (Program command cycle time + Last page data loading time) Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 30/40 ESMT F59L512M81A Copy-Back Program Copy-Back Program is designed to efficiently copy data stored in memory cells without time-consuming data reloading when there is no bit error detected in the stored data. The benefit is particularly obvious when a portion of a block is updated and the rest of the block needs to be copied to a newly assigned empty block. Copy-Back operation is a sequential execution of Read for Copy-Back and of Copy-Back Program with Destination address. A Read for Copy-Back operation with “35h” command and the Source address moves the whole 2,112byte data into the internal buffer. The host controller can detect bit errors by sequentially reading the data output. Copy-Back Program is initiated by issuing Page-Copy Data-Input command (85h) with Destination address. If data modification is necessary to correct bit errors and to avoid error propagation, data can be reloaded after the Destination address. Data modification can be repeated multiple times as shown in Figure 33. Actual programming operation begins when Program Confirm command (10h) is issued. Once the program process starts, the Read Status command (70h) may be entered to read the status register. The host controller can detect the completion of a program cycle by monitoring the R/ B output, or the Status bit (I/O6) of the Status Register. When the Copy-Back Program is complete, the Status Bit (I/O0) may be checked. The command register remains Read Status mode until another valid command is written to it. Page Copy-Back Program Operation Page Copy-Back Program Operation with Random Data Input Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 31/40 ESMT F59L512M81A Block Erase The block-based Erase operation is initiated by an Erase Setup command (60h), followed by a two-cycle row address, in which only Plane address and Block address are valid while Page address is ignored. The Erase Confirm command (D0h) following the row address starts the internal erasing process. The two-step command sequence is designed to prevent memory content from being inadvertently changed by external noise. At the rising edge of WE after the Erase Confirm command input, the internal control logic handles erase and erase-verify. When the erase operation is completed, the host controller can check Status bit (I/O0) to see if the erase operation is successfully done. Figure 30 illustrates a block erase sequence, and the address input (the first page address of the selected block) is placed in between commands 60h and D0h. After tBERS erase time, the R/ B de-asserts to ready state. Read Status command (70h) can be issued right after D0h to check the execution status of erase operation. Block Erase Operation Read Status A status register on the device is used to check whether program or erase operation is completed and whether the operation is completed successfully. After writing 70h command to the command register, a read cycle outputs the content of the status register to I/O pins on the falling edge of CE or RE , whichever occurs last. These two commands allow the system to poll the progress of each device in multiple memory connections even when R/ B pins are common-wired. RE or CE does not need to toggle for status change. The command register remains in Read Status mode unless other commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command (00h) is needed to start read cycles. Status Register Definition for 70h Command I/O Page Program Block Erase I/O0 Pass / Fail Pass / Fail I/O1 NA NA I/O2 NA (Pass / Fail, OTP) NA I/O3 NA NA I/O4 NA NA I/O5 NA NA True Ready / Busy NA I/O6 Ready / Busy Ready / Busy Ready / Busy Write Protect Ready / Busy I/O7 Write Protect Write Protect Cache Program Chip Pass / Fail (N) Plane 0 Pass / Fail (N) Plane 1 Pass / Fail (N) Plane 0 Pass / Fail (N-1) Plane 1 Pass / Fail (N-1) Read Cache Read NA NA Pass: ”0” NA NA Don’t cared NA NA Don’t cared NA NA Don’t cared NA NA Don’t cared Write Protect True Ready / Busy Ready / Busy Write Protect Definition Busy: ”0” Fail: ”1” Ready: ”1” Busy: ”0” Ready: ”1” Protected: ”0” Not Protected: ”1” Note: 1. I/Os defined ’NA’ are recommended to be masked out when Read Status is being executed. 2. n: current page, n-1: previous page. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 32/40 ESMT F59L512M81A Read ID The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Four read cycles sequentially output the manufacturer code (C8h), and the device code and 3rd, 4th and 5th cycle ID respectively. The command register remains in Read ID mode until further commands are issued to it. Read ID Operation ID Definition Table ID Access command = 90h 1st Cycle (Maker Code) 2nd Cycle (Device Code) 3rd Cycle 4th Cycle 5th Cycle C8h D0h 90h 95h 30h RESET The device offers a reset feature, executed by writing FFh to the command register. When the device is in busy state during random read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high. If the device is already in reset state a new reset command will be accepted by the command register. The R/ B pin changes to low for tRST after the Reset command is written. Refer to Figure below. Device Status Operation mode After Power-up After Reset 00h Command is latched Waiting for next command Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 33/40 ESMT F59L512M81A Cache Read Cache Read is an extension of Page Read, and is available only within a block. The normal Page Read command (00h-30h) is always issued before invoking Cache Read. After issuing the Cache Read command (31h), read data of the designated page (page N) are transferred from data registers to cache registers in a short time period of tDCBSYR, and then data of the next page (page N+1) is transferred to data registers while the data in the cache registers are being read out. Host controller can retrieve continuous data and achieve fast read performance by iterating Cache Read operation. The Read Start for Last Page Cache Read command (3Fh) is used to complete data transfer from memory cells to data registers. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 34/40 ESMT F59L512M81A READY/ BUSY The device has an R/ B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/ B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/ B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/ B ) and current drain during busy (ibusy), an appropriate value can be obtained with the following reference chart. Its value can be determined by the following guidance. where IL is the sum of the input currents of all devices tied to the R/ B pin. RP (max) is determined by maximum permissible limit of tr Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 35/40 ESMT F59L512M81A Data Protection & Power-up sequence The timing sequence shown in the figure below is necessary for the power-on/off sequence. The device internal initialization starts after the power supply reaches an appropriate level in the power on sequence. During the initialization the device R/ B signal indicates the Busy state as shown in the figure below. In this time period, the acceptable commands are 70h. The WP signal is useful for protecting against data corruption at power on/off. AC Waveforms for Power Transition Write Protect Operation Enable WP during erase and program busy is prohibited. The erase and program operations are enabled and disable as follows. Enable Programming: Note: WP keeps “High” until programming finish. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 36/40 ESMT F59L512M81A Disable Programming: Enable Erasing: Note: WP keeps “High” until erasing finish. Disable Erasing: Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 37/40 ESMT F59L512M81A PACKING DIMENSION 48-LEAD TSOP(I) ( 12x20 mm ) Symbol A A1 A2 b b1 c c1 Dimension in mm Min Norm Max ------- ------- 1.20 0.05 ------- 0.15 0.95 1.00 1.05 0.17 0.22 0.27 0.17 0.20 0.23 0.10 ------- 0.21 0.10 ------- 0.16 Dimension in inch Dimension in mm Symbol Min Norm Max Min Norm Max ------- ------- 0.047 D 20.00 BSC 0.006 ------- 0.002 D1 18.40 BSC 0.037 0.039 0.041 E 12.00 BSC 0.007 0.009 0.011 0.50 BSC e 0.007 0.008 0.009 L 0.50 0.60 0.70 0.004 ------- 0.008 θ 0O ------8O 0.004 ------- 0.006 Elite Semiconductor Memory Technology Inc. Dimension in inch Min Norm Max 0.787 BSC 0.724 BSC 0.472 BSC 0.020 BSC 0.020 0.024 0.028 0O ------8O Publication Date: May 2014 Revision: 1.0 38/40 ESMT F59L512M81A Revision History Revision Date 0.1 2013.03.27 0.2 2013.05.07 0.3 2014.01.29 1.0 2014.05.27 Elite Semiconductor Memory Technology Inc. Description Original 1. Add Bad-Bloack-Protect 2. Modify the typical value of tPROG and tBERS 3. Modify the description of Identifying Initial Invalid Block(s) 4. Modify 3rd and 5th ID Data of ID Definition 1. Correct typo 2. Add Cache Program into Status Register Definition for 70h Command table 3. Delete tDBSY 1. Delete "Preliminary" 2. Modify the description of Identifying Initial Invalid Block(s) and Block Replacement Management Publication Date: May 2014 Revision: 1.0 39/40 ESMT F59L512M81A Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Publication Date: May 2014 Revision: 1.0 40/40